IXTM6N90A

IXYS IXTM6N90A

Part Number:
IXTM6N90A
Manufacturer:
IXYS
Ventron No:
5524983-IXTM6N90A
Description:
Standard Power MOSFET
ECAD Model:
Datasheet:
IXTM6N90A

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Specifications
IXYS IXTM6N90A technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTM6N90A.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    35
  • Pin Count
    2
  • JESD-30 Code
    O-MBFM-P2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    180W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.4 Ω @ 3A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Drain to Source Voltage (Vdss)
    900V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    6A
  • Pulsed Drain Current-Max (IDM)
    24A
  • DS Breakdown Voltage-Min
    900V
  • RoHS Status
    ROHS3 Compliant
Description
IXTM6N90A Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2600pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Peak drain current is 24A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 900V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTM6N90A Features
based on its rated peak drain current 24A.
a 900V drain to source voltage (Vdss)


IXTM6N90A Applications
There are a lot of IXYS
IXTM6N90A applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IXTM6N90A More Descriptions
IXYS Power Transistor Module
POWER MOSFET TO-3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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