IXTM5N100

IXYS IXTM5N100

Part Number:
IXTM5N100
Manufacturer:
IXYS
Ventron No:
5524973-IXTM5N100
Description:
Standard Power MOSFET
ECAD Model:
Datasheet:
IXTM5N100

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Specifications
IXYS IXTM5N100 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTM5N100.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • JESD-30 Code
    O-MBFM-P2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    180W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.4 Ω @ 2.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Drain to Source Voltage (Vdss)
    1000V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    5A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5A
  • Pulsed Drain Current-Max (IDM)
    20A
  • DS Breakdown Voltage-Min
    1000V
  • RoHS Status
    ROHS3 Compliant
Description
IXTM5N100 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Peak drain current is 20A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTM5N100 Features
a continuous drain current (ID) of 5A
based on its rated peak drain current 20A.
a 1000V drain to source voltage (Vdss)


IXTM5N100 Applications
There are a lot of IXYS
IXTM5N100 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IXTM5N100 More Descriptions
Trans MOSFET N-CH 1KV 5A 3-Pin(2 Tab) TO-204AA
Mosfet/ 1000V TO-204
Contact for details
POWER MOSFET TO-3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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