IXYS IXTM11N80

Name: IXTM11N80
Brand: IXYS
SKU: 5524823-IXTM11N80
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXTM11N80

Manufacturer:: IXYS

Ventron No:: 5524823-IXTM11N80

Description:: MegaMOSFET

ECAD Model:

Datasheet:: IXTM11N80

Specifications

IXYS IXTM11N80 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTM11N80.

Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
GigaMOS™
Published
2012
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
O-MBFM-P2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
300W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
950m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
170nC @ 10V
Drain to Source Voltage (Vdss)
800V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
11A
Drain-source On Resistance-Max
0.95Ohm
Pulsed Drain Current-Max (IDM)
44A
DS Breakdown Voltage-Min
800V
RoHS Status
ROHS3 Compliant

Description

IXTM11N80 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4500pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 11A.Peak drain current is 44A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTM11N80 Features
based on its rated peak drain current 44A.
a 800V drain to source voltage (Vdss)

IXTM11N80 Applications
There are a lot of IXYS
IXTM11N80 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

IXTM11N80 More Descriptions

POWER MOSFET TO-3

Certification