IXTM5N100A

IXYS IXTM5N100A

Part Number:
IXTM5N100A
Manufacturer:
IXYS
Ventron No:
5524972-IXTM5N100A
Description:
Standard Power MOSFET
ECAD Model:
Datasheet:
IXTM5N100A

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Specifications
IXYS IXTM5N100A technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTM5N100A.
  • Factory Lead Time
    35 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Pin Count
    2
  • JESD-30 Code
    O-MBFM-P2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    180W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    180W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2 Ω @ 2.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Drain to Source Voltage (Vdss)
    1000V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    5A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain-source On Resistance-Max
    2Ohm
  • Pulsed Drain Current-Max (IDM)
    20A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
IXTM5N100A Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 5A.There is a peak drain current of 20A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTM5N100A Features
a continuous drain current (ID) of 5A
based on its rated peak drain current 20A.
a 1000V drain to source voltage (Vdss)


IXTM5N100A Applications
There are a lot of IXYS
IXTM5N100A applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IXTM5N100A More Descriptions
Trans MOSFET N-CH Si 1KV 5A 3-Pin(2 Tab) TO-204AA
IXYS Power Transistor Module
Standard Power MOSFET
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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