IXYS IXTM12N50

Name: IXTM12N50
Brand: IXYS
SKU: 5524995-IXTM12N50
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXTM12N50

Manufacturer:: IXYS

Ventron No:: 5524995-IXTM12N50

Description:: 12 AMPS, 450-500V, 0.4OM/0.5OM

ECAD Model:

Datasheet:: IXTM12N50

Description

part#IXTM12N50, Manufacturer:IXYS Corporation is available at ventronchip.com, see description of IXTM12N50 as below .use the request quote form to request IXTM12N50 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for IXTM12N50 depending on the quantity required, availability and warehouse location.

Product Comparison

The three parts on the right have similar specifications to IXTM12N50.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

Factory Lead Time

Published

Pbfree Code

Power Dissipation

Drain-source On Resistance-Max

Radiation Hardening

Surface Mount

Series

View Compare
IXTM12N50

IXYS

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXTM5N100

IXYS

Through Hole

Through Hole

TO-204AA, TO-3

3

SILICON

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2

FET General Purpose Power

MOSFET (Metal Oxide)

BOTTOM

PIN/PEG

NOT SPECIFIED

NOT SPECIFIED

2

O-MBFM-P2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

180W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2.4 Ω @ 2.5A, 10V

4.5V @ 250μA

2600pF @ 25V

5A Tc

130nC @ 10V

1000V

10V

±20V

5A

20V

5A

20A

1000V

ROHS3 Compliant

-

-

-

-

-

-

-

-

IXTM12N50 vs IXTM5N100
IXTM5N100A

IXYS

Through Hole

Through Hole

TO-204AA, TO-3

3

SILICON

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2

FET General Purpose Power

MOSFET (Metal Oxide)

BOTTOM

PIN/PEG

-

-

2

O-MBFM-P2

-

1

SINGLE WITH BUILT-IN DIODE

180W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2 Ω @ 2.5A, 10V

4.5V @ 250μA

2600pF @ 25V

5A Tc

130nC @ 10V

1000V

10V

±20V

5A

20V

5A

20A

-

ROHS3 Compliant

35 Weeks

2000

yes

180W

2Ohm

No

-

-

IXTM12N50 vs IXTM5N100A
IXTM11N80

IXYS

-

Through Hole

TO-204AA, TO-3

-

SILICON

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2

FET General Purpose Power

MOSFET (Metal Oxide)

BOTTOM

PIN/PEG

NOT SPECIFIED

NOT SPECIFIED

-

O-MBFM-P2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

300W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

950m Ω @ 5.5A, 10V

4.5V @ 250μA

4500pF @ 25V

11A Tc

170nC @ 10V

800V

10V

±20V

-

-

11A

44A

800V

ROHS3 Compliant

-

2012

yes

-

0.95Ohm

-

NO

GigaMOS™

IXTM12N50 vs IXTM11N80