IXYS IXTM10N100

Name: IXTM10N100
Brand: IXYS
SKU: 5524253-IXTM10N100
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXTM10N100

Manufacturer:: IXYS

Ventron No:: 5524253-IXTM10N100

Description:: MegaMOS FET

ECAD Model:

Datasheet:: IXTM10N100

Description

The IXTM10N100 is MegaMOS FET , it is part of series. they are designed to work as Transistor.IXTM10N100 with pin details manufactured by IXYS Corporation. The IXTM10N100 is available in Package,it is part of the electronic component Chips.that includes Series. they are designed to operate as Transistor.it is with Operating Temperature .IXTM10N100 with original stock manufactured by IXYS Corporation. The IXTM10N100 is available in Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of IXTM10N100is designed to work in , it's Operating Temperature is .The IXTM10N100 is available in Package, is part of the Transistor and belong to RF Semiconductors.IXTM10N100 with EDA / CAD Models manufactured by IXYS Corporation. The IXTM10N100 is available in Package, is part of the RF Semiconductors.The IXTM10N100 is Transistor with package manufactured by IXYS Corporation. The IXTM10N100 is available in Package, is part of the MegaMOS FET.

Product Comparison

The three parts on the right have similar specifications to IXTM10N100.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

Factory Lead Time

Published

Pbfree Code

Power Dissipation

Drain-source On Resistance-Max

Radiation Hardening

Surface Mount

Series

View Compare
IXTM10N100

IXYS

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXTM5N100

IXYS

Through Hole

Through Hole

TO-204AA, TO-3

3

SILICON

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2

FET General Purpose Power

MOSFET (Metal Oxide)

BOTTOM

PIN/PEG

NOT SPECIFIED

NOT SPECIFIED

2

O-MBFM-P2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

180W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2.4 Ω @ 2.5A, 10V

4.5V @ 250μA

2600pF @ 25V

5A Tc

130nC @ 10V

1000V

10V

±20V

5A

20V

5A

20A

1000V

ROHS3 Compliant

-

-

-

-

-

-

-

-

IXTM10N100 vs IXTM5N100
IXTM5N100A

IXYS

Through Hole

Through Hole

TO-204AA, TO-3

3

SILICON

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2

FET General Purpose Power

MOSFET (Metal Oxide)

BOTTOM

PIN/PEG

-

-

2

O-MBFM-P2

-

1

SINGLE WITH BUILT-IN DIODE

180W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2 Ω @ 2.5A, 10V

4.5V @ 250μA

2600pF @ 25V

5A Tc

130nC @ 10V

1000V

10V

±20V

5A

20V

5A

20A

-

ROHS3 Compliant

35 Weeks

2000

yes

180W

2Ohm

No

-

-

IXTM10N100 vs IXTM5N100A
IXTM11N80

IXYS

-

Through Hole

TO-204AA, TO-3

-

SILICON

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2

FET General Purpose Power

MOSFET (Metal Oxide)

BOTTOM

PIN/PEG

NOT SPECIFIED

NOT SPECIFIED

-

O-MBFM-P2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

300W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

950m Ω @ 5.5A, 10V

4.5V @ 250μA

4500pF @ 25V

11A Tc

170nC @ 10V

800V

10V

±20V

-

-

11A

44A

800V

ROHS3 Compliant

-

2012

yes

-

0.95Ohm

-

NO

GigaMOS™

IXTM10N100 vs IXTM11N80