IXYS IXTA3N120

Name: IXTA3N120
Brand: IXYS
SKU: 2479038-IXTA3N120
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXTA3N120

Manufacturer:: IXYS

Ventron No:: 2479038-IXTA3N120

Description:: MOSFET N-CH 1.2KV 3A TO-263

ECAD Model:

Datasheet:: IXTA3N120

Specifications

IXYS IXTA3N120 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTA3N120.

Factory Lead Time
28 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Supplier Device Package
TO-263 (IXTA)
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
4.5Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
1.2kV
Technology
MOSFET (Metal Oxide)
Current Rating
3A
Number of Elements
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Power Dissipation
150W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3A Tc
Gate Charge (Qg) (Max) @ Vgs
42nC @ 10V
Rise Time
15ns
Drain to Source Voltage (Vdss)
1200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
18 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
3A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
1.1kV
Input Capacitance
1.35nF
Drain to Source Resistance
4.5Ohm
Rds On Max
4.5 Ω
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXTA3N120 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1350pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1.1kV. And this device has 1.1kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 32 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 4.5Ohm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 1200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTA3N120 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1.1kV voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 4.5Ohm
a 1200V drain to source voltage (Vdss)

IXTA3N120 Applications
There are a lot of IXYS
IXTA3N120 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

IXTA3N120 More Descriptions

Mosfet, N-Ch, 1.2Kv, 3A, To-263Aa Rohs Compliant: Yes |Ixys Semiconductor IXTA3N120
Single N-Channel 1200 V 4.5 Ohm 200 W Power Mosfet - TO-263
Trans MOSFET N-CH 1.2KV 3A 3-Pin(2 Tab) D2PAK T/R/Tube

Product Comparison

The three parts on the right have similar specifications to IXTA3N120.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Radiation Hardening

RoHS Status

Lead Free

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Terminal Form

Reach Compliance Code

Pin Count

JESD-30 Code

Configuration

Operating Mode

Case Connection

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Pbfree Code

ECCN Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Transistor Application

Drain Current-Max (Abs) (ID)

View Compare
IXTA3N120

IXYS

28 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

TO-263 (IXTA)

-55°C~150°C TJ

Tube

2004

Active

1 (Unlimited)

4.5Ohm

150°C

-55°C

1.2kV

MOSFET (Metal Oxide)

3A

1

200W Tc

Single

150W

N-Channel

4.5Ohm @ 1.5A, 10V

5V @ 250μA

1350pF @ 25V

3A Tc

42nC @ 10V

15ns

1200V

10V

±20V

18 ns

32 ns

3A

20V

1.1kV

1.35nF

4.5Ohm

4.5 Ω

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXTA15N50L2

IXYS

28 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tube

2011

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

300W Tc

-

-

N-Channel

480m Ω @ 7.5A, 10V

4.5V @ 250μA

4080pF @ 25V

15A Tc

123nC @ 10V

-

500V

10V

±20V

-

-

15A

-

-

-

-

-

-

ROHS3 Compliant

-

SILICON

Linear L2™

e3

2

Matte Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

SINGLE

GULL WING

not_compliant

3

R-PSSO-G2

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

0.48Ohm

35A

500V

750 mJ

-

-

-

-

-

-

-

IXTA3N120 vs IXTA15N50L2
IXTA1N100P

IXYS

17 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tube

2008

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

50W Tc

Single

50W

N-Channel

15 Ω @ 500mA, 10V

4.5V @ 50μA

331pF @ 25V

1A Tc

15.5nC @ 10V

26ns

1000V

10V

±20V

24 ns

55 ns

1A

20V

1kV

-

-

-

-

ROHS3 Compliant

-

SILICON

Polar™

e3

2

Matte Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

-

GULL WING

-

4

R-PSSO-G2

-

ENHANCEMENT MODE

DRAIN

-

1.8A

-

100 mJ

yes

EAR99

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

SWITCHING

1A

IXTA3N120 vs IXTA1N100P
IXTA32N20T

IXYS

24 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

TO-263 (IXTA)

-55°C~175°C TJ

Tube

2010

Active

1 (Unlimited)

72MOhm

175°C

-55°C

-

MOSFET (Metal Oxide)

-

-

200W Tc

Single

200W

N-Channel

72mOhm @ 16A, 10V

4.5V @ 250μA

1760pF @ 25V

32A Tc

38nC @ 10V

18ns

200V

10V

±20V

31 ns

55 ns

32A

20V

200V

1.76nF

78mOhm

72 mΩ

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IXTA3N120 vs IXTA32N20T

Certification

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IXTA110N055T

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IXTA15N50L2

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IXTA3N120 Specification

Part Number	Manufacturers	Description	Stock	Price
IXTA3N120TRL DISTI #V72:2272_16243207	IXYS Corporation	ECN-ARW-TBD	874	1 $7.1478 10 $5.749 25 $5.692 100 $4.63 250 $4.582 500 $4.535
IXTA3N120 DISTI #V36:1790_15877977	IXYS Corporation	Trans MOSFET N-CH 1.2KV 3A 3-Pin(2 Tab) D2PAK RoHS: Compliant	15	1 $6.9355 10 $5.674 25 $5.639 50 $5.077 100 $4.63 250 $4.357 500 $3.756 1000 $3.172 2500 $2.898
IXTA3N120 DISTI #V79:2366_19826271	IXYS Corporation	Trans MOSFET N-CH 1.2KV 3A 3-Pin(2 Tab) D2PAK RoHS: Compliant	9	1 $6.9355 10 $5.674 25 $5.639 50 $5.077 100 $4.63 250 $4.357 500 $3.756 1000 $3.172 2500 $2.898
IXTA3N120 DISTI #V90:2381_15877977	IXYS Corporation	Trans MOSFET N-CH 1.2KV 3A 3-Pin(2 Tab) D2PAK RoHS: Compliant	0	1 $6.36 10 $5.967 100 $3.767 500 $2.757 1000 $2.751
IXTA3N120HV DISTI #V36:1790_19021091	IXYS Corporation	Trans MOSFET N-CH 1.2KV 3A RoHS: Compliant	0	50 $6.16 500 $5.781 5000 $3.654 25000 $2.672 50000 $2.666
IXTA3N120HVTRL DISTI #V36:1790_17736695	IXYS Corporation	IXTA3N120HVTRL	0
IXTA3N120TRL DISTI #V36:1790_16243207	IXYS Corporation	ECN-ARW-TBD	0
IXTA3N120 DISTI #IXTA3N120-ND	IXYS Corporation	MOSFET N-CH 1.2KV 3A TO-263 RoHS: Compliant	429	1 $6.36 10 $5.675 50 $5.1076 100 $4.6535 500 $3.7682 2500 $3.0191
IXTA3N120HV DISTI #IXTA3N120HV-ND	IXYS Corporation	MOSFET N-CH 1.2KV 3A TO263 RoHS: Compliant	257	1 $6.16 10 $5.5 50 $4.95 100 $4.51 500 $3.652 2500 $2.926
IXTA3N120TRL DISTI #IXTA3N120CT-ND	IXYS Corporation	MOSFET N-CH 1200V 3A TO-263 RoHS: Compliant	227	1 $6.55 10 $5.845 100 $4.7931
IXTA3N120TRL DISTI #IXTA3N120DKR-ND	IXYS Corporation	MOSFET N-CH 1200V 3A TO-263 RoHS: Compliant	227	1 $6.55 10 $5.845 100 $4.7931
IXTA3N120TRL DISTI #IXTA3N120TR-ND	IXYS Corporation	MOSFET N-CH 1200V 3A TO-263 RoHS: Compliant	0	800 $3.405 1600 $3.178 2400 $3.0191
IXTA3N120 DISTI #33717843	IXYS Corporation	Trans MOSFET N-CH 1.2KV 3A 3-Pin(2 Tab) D2PAK RoHS: Compliant	1207	4 $3.0285
IXTA3N120TRL DISTI #27081038	IXYS Corporation	ECN-ARW-TBD	874	2 $7.1478
IXTA3N120TRL DISTI #19778639	IXYS Corporation	ECN-ARW-TBD	800	800 $3.0285
IXTA3N120 DISTI #30557310	IXYS Corporation	Trans MOSFET N-CH 1.2KV 3A 3-Pin(2 Tab) D2PAK RoHS: Compliant	15	3 $6.9355
IXTA3N120 DISTI #26703246	IXYS Corporation	Trans MOSFET N-CH 1.2KV 3A 3-Pin(2 Tab) D2PAK RoHS: Compliant	9	3 $6.9355
IXTA3N120 DISTI #	IXYS Corporation	Single N-Channel 1200 V 4.5 Ohm 200 W Power Mosfet RoHS: Compliant	220	50 $5.64 100 $5.36
IXTA3N120 DISTI #747-IXTA3N120	IXYS Corporation	MOSFET 3 Amps 1200V 4.5 Rds RoHS: Compliant	1361	1 $6.36 10 $5.73 25 $5.68 50 $5.1 100 $4.65 250 $4.57 500 $3.76 1000 $3.17 2500 $3.13
IXTA3N120-TRL DISTI #747-IXTA3N120-TRL	IXYS Corporation	Littelfuse IXTA3N120 TRL RoHS: Compliant	0	800 $9.08
IXTA3N120-TRR DISTI #747-IXTA3N120-TRR	IXYS Corporation	Littelfuse IXTA3N120 TRR RoHS: Compliant	0	800 $9.08
IXTA3N120 DISTI #	IXYS Corp		87
IXTA3N120 DISTI #XSFP00000011190	IXYS Corporation	RoHS: Compliant	119	18 $8.06 119 $7.52

IXTA3N1~~(8)~~
IXTA3N~~(12)~~
IXTA3~~(22)~~
IXTA~~(55)~~
IXT~~(56)~~

IXYS IXTA3N120

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