IXYS IXTA10P50P

Name: IXTA10P50P
Brand: IXYS
SKU: 2479005-IXTA10P50P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXTA10P50P

Manufacturer:: IXYS

Ventron No:: 2479005-IXTA10P50P

Description:: MOSFET P-CH 500V 10A TO-263

ECAD Model:

Datasheet:: IXTA10P50P

Specifications

IXYS IXTA10P50P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTA10P50P.

Factory Lead Time
28 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PolarP™
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
1Ohm
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
300W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1 Ω @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2840pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
50nC @ 10V
Rise Time
28ns
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
44 ns
Turn-Off Delay Time
52 ns
Continuous Drain Current (ID)
10A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-500V
Pulsed Drain Current-Max (IDM)
30A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXTA10P50P Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2840pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10A.With a drain-source breakdown voltage of -500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -500V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 52 ns.Peak drain current for this device is 30A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTA10P50P Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 30A.
a 500V drain to source voltage (Vdss)

IXTA10P50P Applications
There are a lot of IXYS
IXTA10P50P applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

IXTA10P50P More Descriptions

Mosfet, P-Ch, 500V, 10A, To-263Aa Rohs Compliant: Yes |Ixys Semiconductor IXTA10P50P
Single P-Channel 500 V 1 Ohm 300 W Power MOSFET - TO-263
Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA

Product Comparison

The three parts on the right have similar specifications to IXTA10P50P.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Reach Compliance Code

FET Feature

Drain Current-Max (Abs) (ID)

View Compare
IXTA10P50P

IXYS

28 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~150°C TJ

Tube

PolarP™

2009

e3

yes

Active

1 (Unlimited)

2

EAR99

1Ohm

Matte Tin (Sn)

AVALANCHE RATED

Other Transistors

MOSFET (Metal Oxide)

GULL WING

4

R-PSSO-G2

1

300W Tc

Single

ENHANCEMENT MODE

300W

DRAIN

P-Channel

SWITCHING

1 Ω @ 5A, 10V

4V @ 250μA

2840pF @ 25V

10A Tc

50nC @ 10V

28ns

500V

10V

±20V

44 ns

52 ns

10A

20V

-500V

30A

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
IXTA152N085T

IXYS

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~175°C TJ

Tube

TrenchMV™

2006

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn)

AVALANCHE RATED

-

MOSFET (Metal Oxide)

GULL WING

4

R-PSSO-G2

1

360W Tc

Single

ENHANCEMENT MODE

360W

DRAIN

N-Channel

SWITCHING

7m Ω @ 25A, 10V

4V @ 250μA

5500pF @ 25V

152A Tc

114nC @ 10V

50ns

-

10V

±20V

45 ns

50 ns

152A

-

85V

410A

-

RoHS Compliant

Lead Free

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

0.007Ohm

750 mJ

-

-

-

IXTA10P50P vs IXTA152N085T
IXTA1N170DHV

IXYS

19 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~150°C TJ

Tube

-

2014

e3

-

Active

1 (Unlimited)

-

-

-

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

-

-

290W Tc

-

-

-

-

N-Channel

-

16 Ω @ 500mA, 0V

-

3090pF @ 25V

1A Tc

47nC @ 5V

-

1700V

10V

±20V

-

-

1A

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

not_compliant

Depletion Mode

-

IXTA10P50P vs IXTA1N170DHV
IXTA1N100P

IXYS

17 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~150°C TJ

Tube

Polar™

2008

e3

yes

Active

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

4

R-PSSO-G2

1

50W Tc

Single

ENHANCEMENT MODE

50W

DRAIN

N-Channel

SWITCHING

15 Ω @ 500mA, 10V

4.5V @ 50μA

331pF @ 25V

1A Tc

15.5nC @ 10V

26ns

1000V

10V

±20V

24 ns

55 ns

1A

20V

1kV

1.8A

-

ROHS3 Compliant

-

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

-

100 mJ

-

-

1A

IXTA10P50P vs IXTA1N100P

Certification

Related parts for IXTA10P50P

IXTA300N04T2

IXYS

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IXTA152N085T

IXYS

MOSFET N-CH 85V 152A TO-263
IXTA180N085T7

IXYS

MOSFET N-CH 85V 180A TO-263-7
IXTA110N055T

IXYS

MOSFET N-CH 55V 110A TO-263
IXTA220N055T

IXYS

MOSFET N-CH 55V 220A TO-263
IXTA15N50L2

IXYS

MOSFET N-CH 500V 15A TO-263
IXTA1N170DHV

IXYS

MOSFET N-CH 1700V 1A TO-263
IXTA1N100P

IXYS

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IXTA110N055P

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IXTA10P~~(2)~~
IXTA10~~(7)~~
IXTA1~~(50)~~
IXTA~~(55)~~
IXT~~(56)~~

Part Number	Manufacturers	Description	Stock	Price
IXTA10P50P DISTI #V36:1790_07432277	IXYS Corporation	Trans MOSFET P-CH 500V 10A 3-Pin(2 Tab) D2PAK RoHS: Compliant	0
IXTA10P50PTRL DISTI #V36:1790_17736650	IXYS Corporation	IXTA10P50PTRL	0	800 $2.45 8000 $2.432 80000 $2.32 400000 $2.244 800000 $2.242
IXTA10P50PTRL DISTI #V72:2272_17736650	IXYS Corporation	IXTA10P50PTRL	0
IXTA10P50PTRL DISTI #IXTA10P50PTRLCT-ND	IXYS Corporation	MOSFET P-CH 500V 10A TO-263AA RoHS: Compliant	7416	1 $5.34 10 $4.764 100 $3.9063
IXTA10P50PTRL DISTI #IXTA10P50PTRLDKR-ND	IXYS Corporation	MOSFET P-CH 500V 10A TO-263AA RoHS: Compliant	7416	1 $5.34 10 $4.764 100 $3.9063
IXTA10P50PTRL DISTI #IXTA10P50PTRLTR-ND	IXYS Corporation	MOSFET P-CH 500V 10A TO-263AA RoHS: Compliant	7200	800 $2.775 1600 $2.59 2400 $2.4605
IXTA10P50P DISTI #IXTA10P50P-ND	IXYS Corporation	MOSFET P-CH 500V 10A TO-263 RoHS: Compliant	3870	1 $5.18 10 $4.625 50 $4.1626 100 $3.7925 500 $3.071 2500 $2.4605
IXTA10P50P DISTI #	IXYS Corporation	Single P-Channel 500 V 1 Ohm 300 W Power MOSFET - RoHS: Compliant	171	5 $4.88 25 $4.53 100 $4.39
IXTA10P50P DISTI #747-IXTA10P50P	IXYS Corporation	MOSFET -10.0 Amps -500V 1.000 Rds RoHS: Compliant	791	1 $5.18 10 $4.67 25 $4.63 50 $4.16 100 $3.79 250 $3.72 500 $3.07 1000 $2.59 2500 $2.55
IXTA10P50P-TRL DISTI #747-IXTA10P50P-TRL	IXYS Corporation	Littelfuse IXTA10P50P TRL RoHS: Compliant	0	800 $7.4
IXTA10P50P DISTI #XSFP00000008500	IXYS Corporation	RoHS: Compliant	92	21 $6.97 92 $6.51

IXYS IXTA10P50P

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