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IXSH24N60AU1

IXYS IXSH24N60AU1

Part Number:
IXSH24N60AU1
Manufacturer:
IXYS
Ventron No:
2496128-IXSH24N60AU1
Description:
IGBT 600V 48A 150W TO247
ECAD Model:
Datasheet:
IXSH24N60AU1

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Specifications
IXYS IXSH24N60AU1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXSH24N60AU1.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.500007g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFAST™
  • Published
    2000
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    150W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXS*24N60
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    150W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    100 ns
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    450 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    48A
  • Reverse Recovery Time
    50ns
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    300 ns
  • Test Condition
    480V, 24A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 24A
  • Turn Off Time-Nom (toff)
    925 ns
  • Gate Charge
    75nC
  • Current - Collector Pulsed (Icm)
    96A
  • Td (on/off) @ 25°C
    100ns/450ns
  • Switching Energy
    2mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • VCEsat-Max
    2.7 V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Fall Time-Max (tf)
    500ns
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IXSH24N60AU1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXSH24N60AU1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXSH24N60AU1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXSH24N60AU1 More Descriptions
IGBT 600V 48A 150W TO247
IGBT/Diode Combi-Pack S series
600V 48A 150W TO247AD
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXSH24N60AU1.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    VCEsat-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Lead Free
    Additional Feature
    Power - Max
    JEDEC-95 Code
    JESD-609 Code
    Terminal Finish
    Terminal Position
    JESD-30 Code
    Configuration
    Voltage - Collector Emitter Breakdown (Max)
    IGBT Type
    View Compare
  • IXSH24N60AU1
    IXSH24N60AU1
    IXYS
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFAST™
    2000
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    150W
    NOT SPECIFIED
    NOT SPECIFIED
    IXS*24N60
    3
    Not Qualified
    1
    Single
    150W
    COLLECTOR
    Standard
    100 ns
    MOTOR CONTROL
    N-CHANNEL
    450 ns
    600V
    48A
    50ns
    600V
    300 ns
    480V, 24A, 10 Ω, 15V
    2.7V @ 15V, 24A
    925 ns
    75nC
    96A
    100ns/450ns
    2mJ (off)
    20V
    2.7 V
    6.5V
    500ns
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXSH30N60AU1
    IXSH30N60AU1
    IXYS
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2000
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    200W
    NOT SPECIFIED
    NOT SPECIFIED
    IXS*30N60
    3
    Not Qualified
    1
    Single
    -
    COLLECTOR
    Standard
    -
    MOTOR CONTROL
    N-CHANNEL
    -
    600V
    50A
    50 ns
    600V
    190 ns
    480V, 30A, 4.7 Ω, 15V
    3V @ 15V, 30A
    680 ns
    110nC
    100A
    60ns/400ns
    2.5mJ (off)
    20V
    3 V
    7V
    -
    RoHS Compliant
    Lead Free
    HIGH SPEED
    200W
    TO-247AD
    -
    -
    -
    -
    -
    -
    -
    IXSH24N60AU1 vs IXSH30N60AU1
  • IXSH25N120AU1
    IXSH25N120AU1
    IXYS
    Through Hole
    Through Hole
    TO-247-3
    -
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2000
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    200W
    260
    35
    -
    3
    Not Qualified
    1
    -
    -
    COLLECTOR
    Standard
    -
    MOTOR CONTROL
    N-CHANNEL
    -
    4V
    50A
    60 ns
    1.2kV
    300 ns
    960V, 25A, 18 Ω, 15V
    4V @ 15V, 25A
    1350 ns
    120nC
    80A
    100ns/450ns
    9.6mJ (off)
    20V
    -
    8V
    -
    RoHS Compliant
    Lead Free
    -
    200W
    -
    e3
    Matte Tin (Sn)
    SINGLE
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    1200V
    -
    IXSH24N60AU1 vs IXSH25N120AU1
  • IXSH24N60A
    IXSH24N60A
    IXYS
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFAST™
    2008
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    150W
    NOT SPECIFIED
    NOT SPECIFIED
    IXS*24N60
    3
    Not Qualified
    1
    Single
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    2.7V
    48A
    -
    600V
    300 ns
    480V, 24A, 10 Ω, 15V
    2.7V @ 15V, 24A
    925 ns
    75nC
    96A
    100ns/450ns
    2mJ (off)
    20V
    -
    6.5V
    500ns
    RoHS Compliant
    -
    HIGH SPEED
    150W
    TO-247AD
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    -
    -
    -
    PT
    IXSH24N60AU1 vs IXSH24N60A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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