IXYS IXGM30N60A
- Part Number:
- IXGM30N60A
- Manufacturer:
- IXYS
- Ventron No:
- 5524286-IXGM30N60A
- Description:
- Low VCE(sat) IGBT, High speed IGBT
- Datasheet:
- IXGM30N60A
Images are for reference only.See Product Specifications for product details.If you are interested to buy IXGM30N60A.
The three parts on the right have similar specifications to IXGM30N60A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureSubcategoryTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Reverse Recovery TimeCurrent - Collector (Ic) (Max)Power Dissipation-Max (Abs)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxVCEsat-MaxGate-Emitter Thr Voltage-MaxPower Dissipation Ambient-MaxRadiation HardeningRoHS StatusLead FreeSurface MountQualification StatusRise Time-MaxConfigurationVoltage - Collector Emitter Breakdown (Max)Fall Time-Max (tf)JESD-609 CodePbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountView Compare
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IXGM30N60A-------------------------------------------------------
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Through HoleThrough HoleTO-204AE3SILICON-55°C~150°C TJTube2006Obsolete1 (Unlimited)2HIGH SPEEDInsulated Gate BIP TransistorsBOTTOMPIN/PEGO-MBFM-P21SingleCOLLECTORStandard150WPOWER CONTROLN-CHANNEL600V200ns40A150W300 ns480V, 20A, 82 Ω, 15V3V @ 15V, 20A1150 ns120nC80A100ns/600ns2mJ (on), 2mJ (off)20V3 V5V150WNoROHS3 CompliantLead Free------------
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-Through HoleTO-204AE-SILICON-55°C~150°C TJTube-Obsolete1 (Unlimited)2-Insulated Gate BIP TransistorsBOTTOMPIN/PEGO-MBFM-P21-COLLECTORStandard200WPOWER CONTROLN-CHANNEL-200ns50A200W300 ns-2.5V @ 15V, 30A1100 ns180nC100A100ns/500ns-30V2.5 V5V200W-ROHS3 Compliant-NONot Qualified200nsSINGLE600V2000ns------
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Through HoleThrough HoleTO-204AE3SILICON-55°C~150°C TJTube-Obsolete1 (Unlimited)2HIGH SPEEDInsulated Gate BIP TransistorsBOTTOMPIN/PEGO-MBFM-P21SingleCOLLECTORStandard200WPOWER CONTROLN-CHANNEL1kV200ns50A200W350 ns800V, 25A, 33 Ω, 15V4V @ 15V, 25A1520 ns180nC100A100ns/500ns5mJ (off)20V4 V5V200W-ROHS3 Compliant--Not Qualified--1000V-e3yesMatte Tin (Sn)260352
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