IXGM30N60A

IXYS IXGM30N60A

Part Number:
IXGM30N60A
Manufacturer:
IXYS
Ventron No:
5524286-IXGM30N60A
Description:
Low VCE(sat) IGBT, High speed IGBT
ECAD Model:
Datasheet:
IXGM30N60A

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Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy IXGM30N60A.
Product Comparison
The three parts on the right have similar specifications to IXGM30N60A.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Reverse Recovery Time
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    VCEsat-Max
    Gate-Emitter Thr Voltage-Max
    Power Dissipation Ambient-Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Qualification Status
    Rise Time-Max
    Configuration
    Voltage - Collector Emitter Breakdown (Max)
    Fall Time-Max (tf)
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    View Compare
  • IXGM30N60A
    IXGM30N60A
    -
    -
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    -
    -
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    -
    -
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    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGM20N60A
    Through Hole
    Through Hole
    TO-204AE
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2006
    Obsolete
    1 (Unlimited)
    2
    HIGH SPEED
    Insulated Gate BIP Transistors
    BOTTOM
    PIN/PEG
    O-MBFM-P2
    1
    Single
    COLLECTOR
    Standard
    150W
    POWER CONTROL
    N-CHANNEL
    600V
    200ns
    40A
    150W
    300 ns
    480V, 20A, 82 Ω, 15V
    3V @ 15V, 20A
    1150 ns
    120nC
    80A
    100ns/600ns
    2mJ (on), 2mJ (off)
    20V
    3 V
    5V
    150W
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGM30N60
    -
    Through Hole
    TO-204AE
    -
    SILICON
    -55°C~150°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    2
    -
    Insulated Gate BIP Transistors
    BOTTOM
    PIN/PEG
    O-MBFM-P2
    1
    -
    COLLECTOR
    Standard
    200W
    POWER CONTROL
    N-CHANNEL
    -
    200ns
    50A
    200W
    300 ns
    -
    2.5V @ 15V, 30A
    1100 ns
    180nC
    100A
    100ns/500ns
    -
    30V
    2.5 V
    5V
    200W
    -
    ROHS3 Compliant
    -
    NO
    Not Qualified
    200ns
    SINGLE
    600V
    2000ns
    -
    -
    -
    -
    -
    -
  • IXGM25N100A
    Through Hole
    Through Hole
    TO-204AE
    3
    SILICON
    -55°C~150°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    2
    HIGH SPEED
    Insulated Gate BIP Transistors
    BOTTOM
    PIN/PEG
    O-MBFM-P2
    1
    Single
    COLLECTOR
    Standard
    200W
    POWER CONTROL
    N-CHANNEL
    1kV
    200ns
    50A
    200W
    350 ns
    800V, 25A, 33 Ω, 15V
    4V @ 15V, 25A
    1520 ns
    180nC
    100A
    100ns/500ns
    5mJ (off)
    20V
    4 V
    5V
    200W
    -
    ROHS3 Compliant
    -
    -
    Not Qualified
    -
    -
    1000V
    -
    e3
    yes
    Matte Tin (Sn)
    260
    35
    2
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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