IXYS IXGM30N60

Name: IXGM30N60
Brand: IXYS
SKU: 5524289-IXGM30N60
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGM30N60

Manufacturer:: IXYS

Ventron No:: 5524289-IXGM30N60

Description:: Low VCE(sat) IGBT, High speed IGBT

ECAD Model:

Datasheet:: IXGM30N60

Specifications

IXYS IXGM30N60 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGM30N60.

Mounting Type
Through Hole
Package / Case
TO-204AE
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Subcategory
Insulated Gate BIP Transistors
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
JESD-30 Code
O-MBFM-P2
Qualification Status
Not Qualified
Number of Elements
1
Rise Time-Max
200ns
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
200W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
200ns
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
50A
Power Dissipation-Max (Abs)
200W
Turn On Time
300 ns
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 30A
Turn Off Time-Nom (toff)
1100 ns
Gate Charge
180nC
Current - Collector Pulsed (Icm)
100A
Td (on/off) @ 25°C
100ns/500ns
Gate-Emitter Voltage-Max
30V
VCEsat-Max
2.5 V
Gate-Emitter Thr Voltage-Max
5V
Power Dissipation Ambient-Max
200W
Fall Time-Max (tf)
2000ns
RoHS Status
ROHS3 Compliant

Description

IXGM30N60 Overview
This product is manufactured by IXYS and belongs to the category of Transistor. The images we provide are for reference only, for detailed product information please see specification sheet IXGM30N60 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGM30N60. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXGM30N60 More Descriptions

POWER MOSFET TO-3

Product Comparison

The three parts on the right have similar specifications to IXGM30N60.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Subcategory

Terminal Position

Terminal Form

JESD-30 Code

Qualification Status

Number of Elements

Rise Time-Max

Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Reverse Recovery Time

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Power Dissipation-Max (Abs)

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Gate-Emitter Voltage-Max

VCEsat-Max

Gate-Emitter Thr Voltage-Max

Power Dissipation Ambient-Max

Fall Time-Max (tf)

RoHS Status

Pbfree Code

Additional Feature

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Test Condition

Switching Energy

Mount

Number of Pins

Published

Element Configuration

Collector Emitter Voltage (VCEO)

Radiation Hardening

Lead Free

JESD-609 Code

Terminal Finish

View Compare
IXGM30N60

IXYS

Through Hole

TO-204AE

NO

SILICON

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2

Insulated Gate BIP Transistors

BOTTOM

PIN/PEG

O-MBFM-P2

Not Qualified

1

200ns

SINGLE

COLLECTOR

Standard

200W

POWER CONTROL

N-CHANNEL

200ns

600V

50A

200W

300 ns

2.5V @ 15V, 30A

1100 ns

180nC

100A

100ns/500ns

30V

2.5 V

5V

200W

2000ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXGM17N100A

IXYS

Through Hole

TO-204AE

NO

SILICON

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2

Insulated Gate BIP Transistors

BOTTOM

PIN/PEG

O-MBFM-P2

Not Qualified

1

-

SINGLE

COLLECTOR

Standard

150W

POWER CONTROL

N-CHANNEL

200ns

1000V

34A

150W

300 ns

4V @ 15V, 17A

1450 ns

120nC

68A

100ns/500ns

20V

4 V

5V

150W

-

ROHS3 Compliant

yes

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

2

800V, 17A, 82 Ω, 15V

3mJ (off)

-

-

-

-

-

-

-

-

-

IXGM30N60 vs IXGM17N100A
IXGM20N60A

IXYS

Through Hole

TO-204AE

-

SILICON

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2

Insulated Gate BIP Transistors

BOTTOM

PIN/PEG

O-MBFM-P2

-

1

-

-

COLLECTOR

Standard

150W

POWER CONTROL

N-CHANNEL

200ns

-

40A

150W

300 ns

3V @ 15V, 20A

1150 ns

120nC

80A

100ns/600ns

20V

3 V

5V

150W

-

ROHS3 Compliant

-

HIGH SPEED

-

-

-

480V, 20A, 82 Ω, 15V

2mJ (on), 2mJ (off)

Through Hole

3

2006

Single

600V

No

Lead Free

-

-

IXGM30N60 vs IXGM20N60A
IXGM40N60

IXYS

Through Hole

TO-204AE

NO

SILICON

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2

Insulated Gate BIP Transistors

BOTTOM

PIN/PEG

O-MBFM-P2

Not Qualified

1

-

-

COLLECTOR

Standard

250W

POWER CONTROL

N-CHANNEL

200ns

-

75A

250W

300 ns

2.5V @ 15V, 40A

1200 ns

250nC

150A

100ns/600ns

20V

2.5 V

5V

250W

2000ns

ROHS3 Compliant

no

-

NOT SPECIFIED

NOT SPECIFIED

-

480V, 40A, 22 Ω, 15V

-

-

-

1997

Single

600V

-

-

e0

Tin/Lead (Sn/Pb)

IXGM30N60 vs IXGM40N60