IXYS IXGM20N60A

Name: IXGM20N60A
Brand: IXYS
SKU: 5524290-IXGM20N60A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGM20N60A

Manufacturer:: IXYS

Ventron No:: 5524290-IXGM20N60A

Description:: Low VCE(sat) IGBT, High speed IGBT

ECAD Model:

Datasheet:: IXGM20N60A

Specifications

IXYS IXGM20N60A technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGM20N60A.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AE
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2006
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Additional Feature
HIGH SPEED
Subcategory
Insulated Gate BIP Transistors
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
150W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Reverse Recovery Time
200ns
Current - Collector (Ic) (Max)
40A
Power Dissipation-Max (Abs)
150W
Turn On Time
300 ns
Test Condition
480V, 20A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 20A
Turn Off Time-Nom (toff)
1150 ns
Gate Charge
120nC
Current - Collector Pulsed (Icm)
80A
Td (on/off) @ 25°C
100ns/600ns
Switching Energy
2mJ (on), 2mJ (off)
Gate-Emitter Voltage-Max
20V
VCEsat-Max
3 V
Gate-Emitter Thr Voltage-Max
5V
Power Dissipation Ambient-Max
150W
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXGM20N60A Overview
This product is manufactured by IXYS and belongs to the category of Transistor. The images we provide are for reference only, for detailed product information please see specification sheet IXGM20N60A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGM20N60A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXGM20N60A More Descriptions

Trans IGBT Chip N-CH 600V 40A 3-Pin(2 Tab) TO-204AE
POWER MOSFET TO-3

Product Comparison

The three parts on the right have similar specifications to IXGM20N60A.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Additional Feature

Subcategory

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Element Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Reverse Recovery Time

Current - Collector (Ic) (Max)

Power Dissipation-Max (Abs)

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

VCEsat-Max

Gate-Emitter Thr Voltage-Max

Power Dissipation Ambient-Max

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Qualification Status

Rise Time-Max

Configuration

Voltage - Collector Emitter Breakdown (Max)

Fall Time-Max (tf)

JESD-609 Code

Pbfree Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

View Compare
IXGM20N60A

IXYS

Through Hole

Through Hole

TO-204AE

3

SILICON

-55°C~150°C TJ

Tube

2006

Obsolete

1 (Unlimited)

2

HIGH SPEED

Insulated Gate BIP Transistors

BOTTOM

PIN/PEG

O-MBFM-P2

1

Single

COLLECTOR

Standard

150W

POWER CONTROL

N-CHANNEL

600V

200ns

40A

150W

300 ns

480V, 20A, 82 Ω, 15V

3V @ 15V, 20A

1150 ns

120nC

80A

100ns/600ns

2mJ (on), 2mJ (off)

20V

3 V

5V

150W

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
IXGM30N60

IXYS

-

Through Hole

TO-204AE

-

SILICON

-55°C~150°C TJ

Tube

-

Obsolete

1 (Unlimited)

2

-

Insulated Gate BIP Transistors

BOTTOM

PIN/PEG

O-MBFM-P2

1

-

COLLECTOR

Standard

200W

POWER CONTROL

N-CHANNEL

-

200ns

50A

200W

300 ns

-

2.5V @ 15V, 30A

1100 ns

180nC

100A

100ns/500ns

-

30V

2.5 V

5V

200W

-

ROHS3 Compliant

-

NO

Not Qualified

200ns

SINGLE

600V

2000ns

-

-

-

-

-

-

IXGM20N60A vs IXGM30N60
IXGM25N100A

IXYS

Through Hole

Through Hole

TO-204AE

3

SILICON

-55°C~150°C TJ

Tube

-

Obsolete

1 (Unlimited)

2

HIGH SPEED

Insulated Gate BIP Transistors

BOTTOM

PIN/PEG

O-MBFM-P2

1

Single

COLLECTOR

Standard

200W

POWER CONTROL

N-CHANNEL

1kV

200ns

50A

200W

350 ns

800V, 25A, 33 Ω, 15V

4V @ 15V, 25A

1520 ns

180nC

100A

100ns/500ns

5mJ (off)

20V

4 V

5V

200W

-

ROHS3 Compliant

-

-

Not Qualified

-

-

1000V

-

e3

yes

Matte Tin (Sn)

260

35

2

IXGM20N60A vs IXGM25N100A
IXGM40N60

IXYS

-

Through Hole

TO-204AE

-

SILICON

-55°C~150°C TJ

Tube

1997

Obsolete

1 (Unlimited)

2

-

Insulated Gate BIP Transistors

BOTTOM

PIN/PEG

O-MBFM-P2

1

Single

COLLECTOR

Standard

250W

POWER CONTROL

N-CHANNEL

600V

200ns

75A

250W

300 ns

480V, 40A, 22 Ω, 15V

2.5V @ 15V, 40A

1200 ns

250nC

150A

100ns/600ns

-

20V

2.5 V

5V

250W

-

ROHS3 Compliant

-

NO

Not Qualified

-

-

-

2000ns

e0

no

Tin/Lead (Sn/Pb)

NOT SPECIFIED

NOT SPECIFIED

-

IXGM20N60A vs IXGM40N60