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IXGM40N60

IXYS IXGM40N60

Part Number:
IXGM40N60
Manufacturer:
IXYS
Ventron No:
5524287-IXGM40N60
Description:
Low VCE(sat) IGBT, High speed IGBT
ECAD Model:
Datasheet:
IXGM40N60

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Specifications
IXYS IXGM40N60 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGM40N60.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AE
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Insulated Gate BIP Transistors
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    O-MBFM-P2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    250W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Reverse Recovery Time
    200ns
  • Current - Collector (Ic) (Max)
    75A
  • Power Dissipation-Max (Abs)
    250W
  • Turn On Time
    300 ns
  • Test Condition
    480V, 40A, 22 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 40A
  • Turn Off Time-Nom (toff)
    1200 ns
  • Gate Charge
    250nC
  • Current - Collector Pulsed (Icm)
    150A
  • Td (on/off) @ 25°C
    100ns/600ns
  • Gate-Emitter Voltage-Max
    20V
  • VCEsat-Max
    2.5 V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Power Dissipation Ambient-Max
    250W
  • Fall Time-Max (tf)
    2000ns
  • RoHS Status
    ROHS3 Compliant
Description
IXGM40N60 Overview
This product is manufactured by IXYS and belongs to the category of Transistor. The images we provide are for reference only, for detailed product information please see specification sheet IXGM40N60 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGM40N60. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGM40N60 More Descriptions
Trans IGBT Chip N-CH 600V 75A
POWER MOSFET TO-3
Product Comparison
The three parts on the right have similar specifications to IXGM40N60.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Reverse Recovery Time
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Gate-Emitter Voltage-Max
    VCEsat-Max
    Gate-Emitter Thr Voltage-Max
    Power Dissipation Ambient-Max
    Fall Time-Max (tf)
    RoHS Status
    Mount
    Number of Pins
    Additional Feature
    Switching Energy
    Radiation Hardening
    Lead Free
    Rise Time-Max
    Configuration
    Voltage - Collector Emitter Breakdown (Max)
    Pin Count
    View Compare
  • IXGM40N60
    IXGM40N60
    IXYS
    Through Hole
    TO-204AE
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    1997
    e0
    no
    Obsolete
    1 (Unlimited)
    2
    Tin/Lead (Sn/Pb)
    Insulated Gate BIP Transistors
    BOTTOM
    PIN/PEG
    NOT SPECIFIED
    NOT SPECIFIED
    O-MBFM-P2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    250W
    POWER CONTROL
    N-CHANNEL
    600V
    200ns
    75A
    250W
    300 ns
    480V, 40A, 22 Ω, 15V
    2.5V @ 15V, 40A
    1200 ns
    250nC
    150A
    100ns/600ns
    20V
    2.5 V
    5V
    250W
    2000ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGM20N60A
    IXGM20N60A
    IXYS
    Through Hole
    TO-204AE
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2006
    -
    -
    Obsolete
    1 (Unlimited)
    2
    -
    Insulated Gate BIP Transistors
    BOTTOM
    PIN/PEG
    -
    -
    O-MBFM-P2
    -
    1
    Single
    COLLECTOR
    Standard
    150W
    POWER CONTROL
    N-CHANNEL
    600V
    200ns
    40A
    150W
    300 ns
    480V, 20A, 82 Ω, 15V
    3V @ 15V, 20A
    1150 ns
    120nC
    80A
    100ns/600ns
    20V
    3 V
    5V
    150W
    -
    ROHS3 Compliant
    Through Hole
    3
    HIGH SPEED
    2mJ (on), 2mJ (off)
    No
    Lead Free
    -
    -
    -
    -
    IXGM40N60 vs IXGM20N60A
  • IXGM30N60
    IXGM30N60
    IXYS
    Through Hole
    TO-204AE
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    -
    -
    -
    Obsolete
    1 (Unlimited)
    2
    -
    Insulated Gate BIP Transistors
    BOTTOM
    PIN/PEG
    -
    -
    O-MBFM-P2
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    200W
    POWER CONTROL
    N-CHANNEL
    -
    200ns
    50A
    200W
    300 ns
    -
    2.5V @ 15V, 30A
    1100 ns
    180nC
    100A
    100ns/500ns
    30V
    2.5 V
    5V
    200W
    2000ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    200ns
    SINGLE
    600V
    -
    IXGM40N60 vs IXGM30N60
  • IXGM25N100A
    IXGM25N100A
    IXYS
    Through Hole
    TO-204AE
    -
    SILICON
    -55°C~150°C TJ
    Tube
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    BOTTOM
    PIN/PEG
    260
    35
    O-MBFM-P2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    200W
    POWER CONTROL
    N-CHANNEL
    1kV
    200ns
    50A
    200W
    350 ns
    800V, 25A, 33 Ω, 15V
    4V @ 15V, 25A
    1520 ns
    180nC
    100A
    100ns/500ns
    20V
    4 V
    5V
    200W
    -
    ROHS3 Compliant
    Through Hole
    3
    HIGH SPEED
    5mJ (off)
    -
    -
    -
    -
    1000V
    2
    IXGM40N60 vs IXGM25N100A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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