IXYS IXGM25N100A

Name: IXGM25N100A
Brand: IXYS
SKU: 5524288-IXGM25N100A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGM25N100A

Manufacturer:: IXYS

Ventron No:: 5524288-IXGM25N100A

Description:: Low VCE(sat), High speed IGBT

ECAD Model:

Datasheet:: IXGM25N100A

Specifications

IXYS IXGM25N100A technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGM25N100A.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AE
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH SPEED
Subcategory
Insulated Gate BIP Transistors
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
35
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
200W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1kV
Reverse Recovery Time
200ns
Voltage - Collector Emitter Breakdown (Max)
1000V
Current - Collector (Ic) (Max)
50A
Power Dissipation-Max (Abs)
200W
Turn On Time
350 ns
Test Condition
800V, 25A, 33 Ω, 15V
Vce(on) (Max) @ Vge, Ic
4V @ 15V, 25A
Turn Off Time-Nom (toff)
1520 ns
Gate Charge
180nC
Current - Collector Pulsed (Icm)
100A
Td (on/off) @ 25°C
100ns/500ns
Switching Energy
5mJ (off)
Gate-Emitter Voltage-Max
20V
VCEsat-Max
4 V
Gate-Emitter Thr Voltage-Max
5V
Power Dissipation Ambient-Max
200W
RoHS Status
ROHS3 Compliant

Description

IXGM25N100A Overview
This product is manufactured by IXYS and belongs to the category of Transistor. The images we provide are for reference only, for detailed product information please see specification sheet IXGM25N100A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGM25N100A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXGM25N100A More Descriptions

Trans IGBT Chip N-CH 1KV 50A 3-Pin(2 Tab) TO-204AE
French Electronic Distributor since 1988
OEMs, CMs ONLY (NO BROKERS)
Contact for details
POWER MOSFET TO-3

Product Comparison

The three parts on the right have similar specifications to IXGM25N100A.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Reverse Recovery Time

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Power Dissipation-Max (Abs)

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

VCEsat-Max

Gate-Emitter Thr Voltage-Max

Power Dissipation Ambient-Max

RoHS Status

Surface Mount

Configuration

Rise Time-Max

Fall Time-Max (tf)

Published

View Compare
IXGM25N100A

IXYS

Through Hole

Through Hole

TO-204AE

3

SILICON

-55°C~150°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

2

Matte Tin (Sn)

HIGH SPEED

Insulated Gate BIP Transistors

BOTTOM

PIN/PEG

260

35

2

O-MBFM-P2

Not Qualified

1

Single

COLLECTOR

Standard

200W

POWER CONTROL

N-CHANNEL

1kV

200ns

1000V

50A

200W

350 ns

800V, 25A, 33 Ω, 15V

4V @ 15V, 25A

1520 ns

180nC

100A

100ns/500ns

5mJ (off)

20V

4 V

5V

200W

ROHS3 Compliant

-

-

-

-

-

-
IXGM17N100A

IXYS

-

Through Hole

TO-204AE

-

SILICON

-55°C~150°C TJ

Tube

-

yes

Obsolete

1 (Unlimited)

2

-

HIGH SPEED

Insulated Gate BIP Transistors

BOTTOM

PIN/PEG

NOT SPECIFIED

NOT SPECIFIED

2

O-MBFM-P2

Not Qualified

1

-

COLLECTOR

Standard

150W

POWER CONTROL

N-CHANNEL

-

200ns

1000V

34A

150W

300 ns

800V, 17A, 82 Ω, 15V

4V @ 15V, 17A

1450 ns

120nC

68A

100ns/500ns

3mJ (off)

20V

4 V

5V

150W

ROHS3 Compliant

NO

SINGLE

-

-

-

IXGM25N100A vs IXGM17N100A
IXGM30N60

IXYS

-

Through Hole

TO-204AE

-

SILICON

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

2

-

-

Insulated Gate BIP Transistors

BOTTOM

PIN/PEG

-

-

-

O-MBFM-P2

Not Qualified

1

-

COLLECTOR

Standard

200W

POWER CONTROL

N-CHANNEL

-

200ns

600V

50A

200W

300 ns

-

2.5V @ 15V, 30A

1100 ns

180nC

100A

100ns/500ns

-

30V

2.5 V

5V

200W

ROHS3 Compliant

NO

SINGLE

200ns

2000ns

-

IXGM25N100A vs IXGM30N60
IXGM40N60

IXYS

-

Through Hole

TO-204AE

-

SILICON

-55°C~150°C TJ

Tube

e0

no

Obsolete

1 (Unlimited)

2

Tin/Lead (Sn/Pb)

-

Insulated Gate BIP Transistors

BOTTOM

PIN/PEG

NOT SPECIFIED

NOT SPECIFIED

-

O-MBFM-P2

Not Qualified

1

Single

COLLECTOR

Standard

250W

POWER CONTROL

N-CHANNEL

600V

200ns

-

75A

250W

300 ns

480V, 40A, 22 Ω, 15V

2.5V @ 15V, 40A

1200 ns

250nC

150A

100ns/600ns

-

20V

2.5 V

5V

250W

ROHS3 Compliant

NO

-

-

2000ns

1997

IXGM25N100A vs IXGM40N60