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IXGH6N170A

IXYS IXGH6N170A

Part Number:
IXGH6N170A
Manufacturer:
IXYS
Ventron No:
3587359-IXGH6N170A
Description:
IGBT 1700V 6A 75W TO247AD
ECAD Model:
Datasheet:
IXGH6N170A

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Specifications
IXYS IXGH6N170A technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH6N170A.
  • Factory Lead Time
    30 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.500007g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    75W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*6N170
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    75W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    46 ns
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    220 ns
  • Collector Emitter Voltage (VCEO)
    1.7kV
  • Max Collector Current
    6A
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    1.7kV
  • Voltage - Collector Emitter Breakdown (Max)
    1700V
  • Collector Emitter Saturation Voltage
    5.4V
  • Turn On Time
    91 ns
  • Test Condition
    850V, 6A, 33 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    7V @ 15V, 3A
  • Turn Off Time-Nom (toff)
    271 ns
  • IGBT Type
    NPT
  • Gate Charge
    18.5nC
  • Current - Collector Pulsed (Icm)
    14A
  • Td (on/off) @ 25°C
    46ns/220ns
  • Switching Energy
    590μJ (on), 180μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Fall Time-Max (tf)
    65ns
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXGH6N170A Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH6N170A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH6N170A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH6N170A More Descriptions
Trans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3 Tab) TO-247AD
IXGH Series 1700 Vce 6 A 46 ns t(on) High Voltage IGBT - TO-247AD
Insulated Gate Bipolar Transistor, 6A I(C), 1700V V(BR)CES, N-Channel, TO-247AD
75W 6A 1700V NPT TO-247-3 IGBTs ROHS
Product Comparison
The three parts on the right have similar specifications to IXGH6N170A.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Lead Free
    Terminal Position
    JESD-30 Code
    Configuration
    Power - Max
    Reverse Recovery Time
    Max Operating Temperature
    Min Operating Temperature
    Radiation Hardening
    View Compare
  • IXGH6N170A
    IXGH6N170A
    IXYS
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    2003
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Insulated Gate BIP Transistors
    75W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*6N170
    3
    Not Qualified
    1
    Single
    75W
    COLLECTOR
    Standard
    46 ns
    POWER CONTROL
    N-CHANNEL
    220 ns
    1.7kV
    6A
    TO-247AD
    1.7kV
    1700V
    5.4V
    91 ns
    850V, 6A, 33 Ω, 15V
    7V @ 15V, 3A
    271 ns
    NPT
    18.5nC
    14A
    46ns/220ns
    590μJ (on), 180μJ (off)
    20V
    5V
    65ns
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGH24N60C4
    IXGH24N60C4
    IXYS
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2012
    -
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    Insulated Gate BIP Transistors
    190W
    NOT SPECIFIED
    NOT SPECIFIED
    -
    3
    Not Qualified
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    2.7V
    56A
    TO-247AD
    600V
    -
    -
    52 ns
    360V, 24A, 10 Ω, 15V
    2.7V @ 15V, 24A
    248 ns
    PT
    64nC
    130A
    21ns/143ns
    400μJ (on), 300μJ (off)
    20V
    5V
    -
    RoHS Compliant
    -
    SINGLE
    R-PSFM-T3
    SINGLE
    190W
    -
    -
    -
    -
    IXGH6N170A vs IXGH24N60C4
  • IXGH16N170AH1
    IXGH16N170AH1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    6.500007g
    SILICON
    -55°C~150°C TJ
    Bulk
    2012
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    Insulated Gate BIP Transistors
    190W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*16N170
    3
    Not Qualified
    1
    Single
    -
    COLLECTOR
    Standard
    -
    MOTOR CONTROL
    N-CHANNEL
    -
    1.7kV
    16A
    TO-247AD
    1.7kV
    1700V
    -
    97 ns
    850V, 16A, 10 Ω, 15V
    5V @ 15V, 11A
    330 ns
    NPT
    65nC
    40A
    36ns/160ns
    900μJ (off)
    20V
    5V
    150ns
    RoHS Compliant
    Lead Free
    -
    R-PSFM-T3
    -
    190W
    230 ns
    -
    -
    -
    IXGH6N170A vs IXGH16N170AH1
  • IXGH25N250
    IXGH25N250
    IXYS
    28 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    -
    -
    Tube
    2003
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    250W
    -
    -
    IXG*25N250
    3
    -
    1
    Single
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    2.5kV
    60A
    -
    2.5kV
    2500V
    -
    301 ns
    -
    5.2V @ 15V, 75A
    409 ns
    NPT
    75nC
    200A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    R-PSFM-T3
    -
    -
    -
    150°C
    -55°C
    No
    IXGH6N170A vs IXGH25N250
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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