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IXGH40N120B2D1

IXYS IXGH40N120B2D1

Part Number:
IXGH40N120B2D1
Manufacturer:
IXYS
Ventron No:
3554915-IXGH40N120B2D1
Description:
IGBT 1200V 75A 380W TO247
ECAD Model:
Datasheet:
IXGH40N120B2D1

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Specifications
IXYS IXGH40N120B2D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH40N120B2D1.
  • Factory Lead Time
    30 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.500007g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2009
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    380W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*40N120
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    380W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    75A
  • Reverse Recovery Time
    100ns
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    2.9V
  • Turn On Time
    79 ns
  • Test Condition
    960V, 40A, 2 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.5V @ 15V, 40A
  • Turn Off Time-Nom (toff)
    770 ns
  • IGBT Type
    PT
  • Gate Charge
    138nC
  • Current - Collector Pulsed (Icm)
    200A
  • Td (on/off) @ 25°C
    21ns/290ns
  • Switching Energy
    4.5mJ (on), 3mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Fall Time-Max (tf)
    270ns
  • Height
    21.46mm
  • Length
    16.26mm
  • Width
    5.3mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXGH40N120B2D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH40N120B2D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH40N120B2D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH40N120B2D1 More Descriptions
IGBT 1200V 75A 380W TO247
Igbt, Single, 1.2Kv, 75A, To-247; Dc Collector Current:75A; Collector Emitter Saturation Voltage Vce(On):2.9V; Power Dissipation Pd:380W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Ixys Semiconductor IXGH40N120B2D1
IGBT, 1.2kV, 75A, TO-247AD
IGBT DISCRETE
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGH40N120B2D1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Additional Feature
    JESD-30 Code
    Power - Max
    Input Capacitance
    Current - Collector (Ic) (Max)
    JEDEC-95 Code
    VCEsat-Max
    View Compare
  • IXGH40N120B2D1
    IXGH40N120B2D1
    IXYS
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    Insulated Gate BIP Transistors
    380W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*40N120
    3
    Not Qualified
    1
    Single
    380W
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.2kV
    75A
    100ns
    1.2kV
    1200V
    2.9V
    79 ns
    960V, 40A, 2 Ω, 15V
    3.5V @ 15V, 40A
    770 ns
    PT
    138nC
    200A
    21ns/290ns
    4.5mJ (on), 3mJ (off)
    20V
    5V
    270ns
    21.46mm
    16.26mm
    5.3mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGH24N170AH1
    IXGH24N170AH1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    Insulated Gate BIP Transistors
    250W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*24N170
    3
    Not Qualified
    1
    Single
    -
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.7kV
    24A
    200 ns
    1.7kV
    1700V
    6V
    54 ns
    850V, 24A, 10 Ω, 15V
    6V @ 15V, 16A
    456 ns
    NPT
    140nC
    75A
    21ns/336ns
    2.97mJ (on), 790μJ (off)
    20V
    5V
    80ns
    -
    -
    -
    RoHS Compliant
    -
    LOW CONDUCTION LOSS
    R-PSFM-T3
    250W
    2.86nF
    -
    -
    -
    IXGH40N120B2D1 vs IXGH24N170AH1
  • IXGH240N30PB
    IXGH240N30PB
    IXYS
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    -
    -
    Tube
    -
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    48A
    -
    300V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    48A
    -
    -
    IXGH40N120B2D1 vs IXGH240N30PB
  • IXGH25N120
    IXGH25N120
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    1997
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    200W
    260
    35
    -
    3
    Not Qualified
    1
    Single
    -
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.2kV
    50A
    -
    1.2kV
    1200V
    -
    350 ns
    960V, 25A, 33 Ω, 15V
    3V @ 15V, 25A
    1920 ns
    -
    130nC
    100A
    100ns/650ns
    11mJ (off)
    20V
    6V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    200W
    -
    -
    TO-247AD
    3 V
    IXGH40N120B2D1 vs IXGH25N120
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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