IXGH36N60B3

IXYS IXGH36N60B3

Part Number:
IXGH36N60B3
Manufacturer:
IXYS
Ventron No:
2496401-IXGH36N60B3
Description:
IGBT 600V 92A 250W TO247
ECAD Model:
Datasheet:
IXGH36N60B3

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Specifications
IXYS IXGH36N60B3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH36N60B3.
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    GenX3™
  • Published
    2010
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    250W
  • Terminal Position
    SINGLE
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    250W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.8V
  • Max Collector Current
    92A
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    45 ns
  • Test Condition
    400V, 30A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.8V @ 15V, 30A
  • Turn Off Time-Nom (toff)
    350 ns
  • IGBT Type
    PT
  • Gate Charge
    80nC
  • Current - Collector Pulsed (Icm)
    200A
  • Td (on/off) @ 25°C
    19ns/125ns
  • Switching Energy
    540μJ (on), 800μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Fall Time-Max (tf)
    160ns
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXGH36N60B3 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH36N60B3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH36N60B3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH36N60B3 More Descriptions
Trans IGBT Chip N-CH 600V 92A 250000mW 3-Pin(3 Tab) TO-247AD
IXGH36N60B 600 V 36 A GenX3 IGBT Transistor - TO-247
IGBT 600V 92A 250W TO247
Medium-Speed Low-Vsat PT IGBT
600V 92A 250W TO247AD
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGH36N60B3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Subcategory
    Max Power Dissipation
    Terminal Position
    JESD-30 Code
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Lead Free
    Current - Collector (Ic) (Max)
    Number of Pins
    Weight
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Element Configuration
    Voltage - Collector Emitter Breakdown (Max)
    VCEsat-Max
    Base Part Number
    Rise Time-Max
    View Compare
  • IXGH36N60B3
    IXGH36N60B3
    20 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2010
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    250W
    SINGLE
    R-PSFM-T3
    1
    SINGLE
    COLLECTOR
    Standard
    250W
    POWER CONTROL
    N-CHANNEL
    1.8V
    92A
    TO-247AD
    600V
    45 ns
    400V, 30A, 5 Ω, 15V
    1.8V @ 15V, 30A
    350 ns
    PT
    80nC
    200A
    19ns/125ns
    540μJ (on), 800μJ (off)
    20V
    5V
    160ns
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGH240N30PB
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    Tube
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    48A
    -
    300V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    48A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGH25N120
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    -
    1997
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    200W
    -
    -
    1
    -
    COLLECTOR
    Standard
    200W
    POWER CONTROL
    N-CHANNEL
    1.2kV
    50A
    TO-247AD
    1.2kV
    350 ns
    960V, 25A, 33 Ω, 15V
    3V @ 15V, 25A
    1920 ns
    -
    130nC
    100A
    100ns/650ns
    11mJ (off)
    20V
    6V
    -
    ROHS3 Compliant
    -
    -
    3
    6.500007g
    e3
    yes
    Matte Tin (Sn)
    260
    35
    3
    Not Qualified
    Single
    1200V
    3 V
    -
    -
  • IXGH20N100
    -
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2000
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    150W
    -
    -
    1
    -
    COLLECTOR
    Standard
    150W
    POWER CONTROL
    N-CHANNEL
    1kV
    40A
    TO-247AD
    1kV
    30 ns
    800V, 20A, 47 Ω, 15V
    3V @ 15V, 20A
    700 ns
    PT
    73nC
    80A
    30ns/350ns
    3.5mJ (off)
    -
    5V
    2000ns
    ROHS3 Compliant
    -
    -
    3
    6.500007g
    -
    yes
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    Single
    1000V
    -
    IXG*20N100
    200ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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