IXYS IXGH36N60B3
- Part Number:
- IXGH36N60B3
- Manufacturer:
- IXYS
- Ventron No:
- 2496401-IXGH36N60B3
- Description:
- IGBT 600V 92A 250W TO247
- Datasheet:
- IXGH36N60B3
IXYS IXGH36N60B3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH36N60B3.
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesGenX3™
- Published2010
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation250W
- Terminal PositionSINGLE
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max250W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.8V
- Max Collector Current92A
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage600V
- Turn On Time45 ns
- Test Condition400V, 30A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 30A
- Turn Off Time-Nom (toff)350 ns
- IGBT TypePT
- Gate Charge80nC
- Current - Collector Pulsed (Icm)200A
- Td (on/off) @ 25°C19ns/125ns
- Switching Energy540μJ (on), 800μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5V
- Fall Time-Max (tf)160ns
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXGH36N60B3 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH36N60B3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH36N60B3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH36N60B3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH36N60B3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH36N60B3 More Descriptions
Trans IGBT Chip N-CH 600V 92A 250000mW 3-Pin(3 Tab) TO-247AD
IXGH36N60B 600 V 36 A GenX3 IGBT Transistor - TO-247
IGBT 600V 92A 250W TO247
Medium-Speed Low-Vsat PT IGBT
600V 92A 250W TO247AD
Contact for details
IXGH36N60B 600 V 36 A GenX3 IGBT Transistor - TO-247
IGBT 600V 92A 250W TO247
Medium-Speed Low-Vsat PT IGBT
600V 92A 250W TO247AD
Contact for details
The three parts on the right have similar specifications to IXGH36N60B3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryMax Power DissipationTerminal PositionJESD-30 CodeNumber of ElementsConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)RoHS StatusLead FreeCurrent - Collector (Ic) (Max)Number of PinsWeightJESD-609 CodePbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusElement ConfigurationVoltage - Collector Emitter Breakdown (Max)VCEsat-MaxBase Part NumberRise Time-MaxView Compare
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IXGH36N60B320 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeGenX3™2010Active1 (Unlimited)3Insulated Gate BIP Transistors250WSINGLER-PSFM-T31SINGLECOLLECTORStandard250WPOWER CONTROLN-CHANNEL1.8V92ATO-247AD600V45 ns400V, 30A, 5 Ω, 15V1.8V @ 15V, 30A350 nsPT80nC200A19ns/125ns540μJ (on), 800μJ (off)20V5V160nsROHS3 CompliantLead Free----------------
-
-Through HoleThrough HoleTO-247-3--Tube--Active1 (Unlimited)--------Standard----48A-300V------------ROHS3 Compliant-48A--------------
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8 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTube-1997Active1 (Unlimited)3Insulated Gate BIP Transistors200W--1-COLLECTORStandard200WPOWER CONTROLN-CHANNEL1.2kV50ATO-247AD1.2kV350 ns960V, 25A, 33 Ω, 15V3V @ 15V, 25A1920 ns-130nC100A100ns/650ns11mJ (off)20V6V-ROHS3 Compliant--36.500007ge3yesMatte Tin (Sn)260353Not QualifiedSingle1200V3 V--
-
-Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTube-2000Active1 (Unlimited)3Insulated Gate BIP Transistors150W--1-COLLECTORStandard150WPOWER CONTROLN-CHANNEL1kV40ATO-247AD1kV30 ns800V, 20A, 47 Ω, 15V3V @ 15V, 20A700 nsPT73nC80A30ns/350ns3.5mJ (off)-5V2000nsROHS3 Compliant--36.500007g-yes-NOT SPECIFIEDNOT SPECIFIED3Not QualifiedSingle1000V-IXG*20N100200ns
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