IXYS IXGH32N60CD1
- Part Number:
- IXGH32N60CD1
- Manufacturer:
- IXYS
- Ventron No:
- 2854718-IXGH32N60CD1
- Description:
- IGBT 600V 60A 200W TO247AD
- ECAD Model:
-
- Datasheet:
- IXGH32N60CD1
IXYS IXGH32N60CD1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH32N60CD1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.500007g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- SeriesHiPerFAST™, Lightspeed™
- Published2002
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation200W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating60A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIXG*32N60
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Rise Time20ns
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current60A
- Reverse Recovery Time25ns
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage600V
- Turn On Time50 ns
- Test Condition480V, 32A, 4.7 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 32A
- Turn Off Time-Nom (toff)210 ns
- Gate Charge110nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C25ns/85ns
- Switching Energy320μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5V
- RoHS StatusRoHS Compliant
- Lead FreeContains Lead
IXGH32N60CD1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH32N60CD1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH32N60CD1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH32N60CD1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH32N60CD1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH32N60CD1 More Descriptions
Trans IGBT Chip N-CH 600V 60A 3-Pin (3 Tab) TO-247AD
IGBT 600V 60A 200W TO247AD
Contact for details
IGBT 600V 60A 200W TO247AD
Contact for details
The three parts on the right have similar specifications to IXGH32N60CD1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationCase ConnectionInput TypeTransistor ApplicationRise TimePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusLead FreeFactory Lead TimeJESD-609 CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureJESD-30 CodeVoltage - Collector Emitter Breakdown (Max)IGBT TypeRadiation HardeningAdditional FeaturePower - MaxCollector Emitter Saturation VoltageInput CapacitanceFall Time-Max (tf)Current - Collector (Ic) (Max)View Compare
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IXGH32N60CD1Through HoleThrough HoleTO-247-336.500007gSILICON-55°C~150°C TJBulkHiPerFAST™, Lightspeed™2002yesObsoleteNot Applicable3Insulated Gate BIP Transistors600V200WNOT SPECIFIED60ANOT SPECIFIEDIXG*32N603Not Qualified1SingleCOLLECTORStandardPOWER CONTROL20nsN-CHANNEL600V60A25nsTO-247AD600V50 ns480V, 32A, 4.7 Ω, 15V2.5V @ 15V, 32A210 ns110nC120A25ns/85ns320μJ (off)20V5VRoHS CompliantContains Lead---------------- -
Through HoleThrough HoleTO-247-3----Tube-2003yesActive1 (Unlimited)3--250W---IXG*25N2503-1SingleCOLLECTORStandardPOWER CONTROL-N-CHANNEL2.5kV60A--2.5kV301 ns-5.2V @ 15V, 75A409 ns75nC200A----ROHS3 CompliantLead Free28 Weekse1Tin/Silver/Copper (Sn/Ag/Cu)150°C-55°CR-PSFM-T32500VNPTNo------
-
Through HoleThrough HoleTO-247-3--SILICON-55°C~150°C TJTube-2009yesObsolete1 (Unlimited)3Insulated Gate BIP Transistors-250WNOT SPECIFIED-NOT SPECIFIEDIXG*24N1703Not Qualified1SingleCOLLECTORStandardPOWER CONTROL-N-CHANNEL1.7kV24A200 ns-1.7kV54 ns850V, 24A, 10 Ω, 15V6V @ 15V, 16A456 ns140nC75A21ns/336ns2.97mJ (on), 790μJ (off)20V5VRoHS Compliant-8 Weekse1Tin/Silver/Copper (Sn/Ag/Cu)--R-PSFM-T31700VNPT-LOW CONDUCTION LOSS250W6V2.86nF80ns-
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Through HoleThrough HoleTO-247-3----Tube---Active1 (Unlimited)-------------Standard----48A--300V----------ROHS3 Compliant---------------48A
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