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IXGH28N90B

IXYS IXGH28N90B

Part Number:
IXGH28N90B
Manufacturer:
IXYS
Ventron No:
3072325-IXGH28N90B
Description:
IGBT 900V 51A 200W TO247AD
ECAD Model:
Datasheet:
IXGH28N90B

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Specifications
IXYS IXGH28N90B technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH28N90B.
  • Factory Lead Time
    6 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.500007g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFAST™
  • Published
    2000
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    200W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    200W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    900V
  • Max Collector Current
    51A
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    900V
  • Turn On Time
    65 ns
  • Test Condition
    720V, 28A, 4.7 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 28A
  • Turn Off Time-Nom (toff)
    470 ns
  • Gate Charge
    100nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    30ns/100ns
  • Switching Energy
    1.2mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Fall Time-Max (tf)
    220ns
  • RoHS Status
    ROHS3 Compliant
Description
IXGH28N90B Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH28N90B or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH28N90B. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH28N90B More Descriptions
Single Channel Single ADC SAR 200ksps 8-bit Serial 8-Pin MSOP Tube
IGBT 900V 51A 200W TO247AD
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGH28N90B.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    JESD-609 Code
    Terminal Finish
    Base Part Number
    JESD-30 Code
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    IGBT Type
    Lead Free
    Additional Feature
    Collector Emitter Saturation Voltage
    Input Capacitance
    VCEsat-Max
    View Compare
  • IXGH28N90B
    IXGH28N90B
    IXYS
    6 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFAST™
    2000
    yes
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    200W
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    200W
    POWER CONTROL
    N-CHANNEL
    900V
    51A
    TO-247AD
    900V
    65 ns
    720V, 28A, 4.7 Ω, 15V
    2.7V @ 15V, 28A
    470 ns
    100nC
    120A
    30ns/100ns
    1.2mJ (off)
    20V
    5V
    220ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGH16N170AH1
    IXGH16N170AH1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    6.500007g
    SILICON
    -55°C~150°C TJ
    Bulk
    -
    2012
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    190W
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    190W
    MOTOR CONTROL
    N-CHANNEL
    1.7kV
    16A
    TO-247AD
    1.7kV
    97 ns
    850V, 16A, 10 Ω, 15V
    5V @ 15V, 11A
    330 ns
    65nC
    40A
    36ns/160ns
    900μJ (off)
    20V
    5V
    150ns
    RoHS Compliant
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    IXG*16N170
    R-PSFM-T3
    230 ns
    1700V
    NPT
    Lead Free
    -
    -
    -
    -
    IXGH28N90B vs IXGH16N170AH1
  • IXGH24N170AH1
    IXGH24N170AH1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2009
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    250W
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    250W
    POWER CONTROL
    N-CHANNEL
    1.7kV
    24A
    -
    1.7kV
    54 ns
    850V, 24A, 10 Ω, 15V
    6V @ 15V, 16A
    456 ns
    140nC
    75A
    21ns/336ns
    2.97mJ (on), 790μJ (off)
    20V
    5V
    80ns
    RoHS Compliant
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    IXG*24N170
    R-PSFM-T3
    200 ns
    1700V
    NPT
    -
    LOW CONDUCTION LOSS
    6V
    2.86nF
    -
    IXGH28N90B vs IXGH24N170AH1
  • IXGH25N120
    IXGH25N120
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    -
    1997
    yes
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    200W
    260
    35
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    200W
    POWER CONTROL
    N-CHANNEL
    1.2kV
    50A
    TO-247AD
    1.2kV
    350 ns
    960V, 25A, 33 Ω, 15V
    3V @ 15V, 25A
    1920 ns
    130nC
    100A
    100ns/650ns
    11mJ (off)
    20V
    6V
    -
    ROHS3 Compliant
    e3
    Matte Tin (Sn)
    -
    -
    -
    1200V
    -
    -
    -
    -
    -
    3 V
    IXGH28N90B vs IXGH25N120
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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