IXGH28N120BD1

IXYS IXGH28N120BD1

Part Number:
IXGH28N120BD1
Manufacturer:
IXYS
Ventron No:
3072205-IXGH28N120BD1
Description:
IGBT 1200V 50A 250W TO247
ECAD Model:
Datasheet:
IXGH28N120BD1

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Specifications
IXYS IXGH28N120BD1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH28N120BD1.
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.500007g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2009
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    250W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*28N120
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    250W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    50A
  • Reverse Recovery Time
    40 ns
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Turn On Time
    63 ns
  • Test Condition
    960V, 28A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.5V @ 15V, 28A
  • Turn Off Time-Nom (toff)
    590 ns
  • IGBT Type
    PT
  • Gate Charge
    92nC
  • Current - Collector Pulsed (Icm)
    150A
  • Td (on/off) @ 25°C
    30ns/210ns
  • Switching Energy
    2.2mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • RoHS Status
    ROHS3 Compliant
Description
IXGH28N120BD1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH28N120BD1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH28N120BD1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH28N120BD1 More Descriptions
IGBT 1200V 50A 250W TO247
OEMs, CMs ONLY (NO BROKERS)
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGH28N120BD1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Terminal Position
    JESD-30 Code
    Configuration
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Collector Emitter Saturation Voltage
    Input Capacitance
    Fall Time-Max (tf)
    Series
    Power Dissipation
    Turn On Delay Time
    Turn-Off Delay Time
    Lead Free
    View Compare
  • IXGH28N120BD1
    IXGH28N120BD1
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    yes
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    250W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*28N120
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    250W
    POWER CONTROL
    N-CHANNEL
    1.2kV
    50A
    40 ns
    TO-247AD
    1.2kV
    1200V
    63 ns
    960V, 28A, 5 Ω, 15V
    3.5V @ 15V, 28A
    590 ns
    PT
    92nC
    150A
    30ns/210ns
    2.2mJ (off)
    20V
    5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGH24N60C4
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2012
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    190W
    NOT SPECIFIED
    NOT SPECIFIED
    -
    3
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    190W
    POWER CONTROL
    N-CHANNEL
    2.7V
    56A
    -
    TO-247AD
    600V
    -
    52 ns
    360V, 24A, 10 Ω, 15V
    2.7V @ 15V, 24A
    248 ns
    PT
    64nC
    130A
    21ns/143ns
    400μJ (on), 300μJ (off)
    20V
    5V
    RoHS Compliant
    SINGLE
    R-PSFM-T3
    SINGLE
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGH24N170AH1
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    250W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*24N170
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    250W
    POWER CONTROL
    N-CHANNEL
    1.7kV
    24A
    200 ns
    -
    1.7kV
    1700V
    54 ns
    850V, 24A, 10 Ω, 15V
    6V @ 15V, 16A
    456 ns
    NPT
    140nC
    75A
    21ns/336ns
    2.97mJ (on), 790μJ (off)
    20V
    5V
    RoHS Compliant
    -
    R-PSFM-T3
    -
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    LOW CONDUCTION LOSS
    6V
    2.86nF
    80ns
    -
    -
    -
    -
    -
  • IXGH20N140C3H1
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2010
    yes
    Obsolete
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    250W
    NOT SPECIFIED
    NOT SPECIFIED
    -
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    5V
    42A
    70ns
    -
    1.4kV
    1400V
    35 ns
    700V, 20A, 5 Ω, 15V
    5V @ 15V, 20A
    524 ns
    PT
    88nC
    108A
    19ns/110ns
    1.35mJ (on), 440μJ (off)
    20V
    5V
    RoHS Compliant
    -
    R-PSFM-T3
    -
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    ULTRA FAST
    4V
    -
    -
    GenX3™
    250W
    19 ns
    110 ns
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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