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IXGH25N120A

IXYS IXGH25N120A

Part Number:
IXGH25N120A
Manufacturer:
IXYS
Ventron No:
3072221-IXGH25N120A
Description:
IGBT 1200V 50A 200W TO247AD
ECAD Model:
Datasheet:
IXGH25N120A

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Specifications
IXYS IXGH25N120A technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH25N120A.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1997
  • JESD-609 Code
    e1
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    HIGH SPEED
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    200W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    200W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    50A
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Turn On Time
    350 ns
  • Test Condition
    960V, 25A, 33 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    4V @ 15V, 25A
  • Turn Off Time-Nom (toff)
    1520 ns
  • Gate Charge
    130nC
  • Current - Collector Pulsed (Icm)
    100A
  • Td (on/off) @ 25°C
    100ns/650ns
  • Switching Energy
    11mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • VCEsat-Max
    4 V
  • Gate-Emitter Thr Voltage-Max
    6V
  • RoHS Status
    ROHS3 Compliant
Description
IXGH25N120A Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH25N120A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH25N120A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH25N120A More Descriptions
IGBT 1200V 50A 200W TO247AD
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGH25N120A.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    VCEsat-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Weight
    Pbfree Code
    Base Part Number
    JESD-30 Code
    Reverse Recovery Time
    IGBT Type
    Fall Time-Max (tf)
    Lead Free
    Max Operating Temperature
    Min Operating Temperature
    Radiation Hardening
    Rise Time-Max
    View Compare
  • IXGH25N120A
    IXGH25N120A
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    1997
    e1
    Active
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    HIGH SPEED
    Insulated Gate BIP Transistors
    200W
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    200W
    POWER CONTROL
    N-CHANNEL
    1.2kV
    50A
    TO-247AD
    1.2kV
    1200V
    350 ns
    960V, 25A, 33 Ω, 15V
    4V @ 15V, 25A
    1520 ns
    130nC
    100A
    100ns/650ns
    11mJ (off)
    20V
    4 V
    6V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGH16N170AH1
    IXGH16N170AH1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    SILICON
    -55°C~150°C TJ
    Bulk
    2012
    e1
    Obsolete
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    Insulated Gate BIP Transistors
    190W
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    190W
    MOTOR CONTROL
    N-CHANNEL
    1.7kV
    16A
    TO-247AD
    1.7kV
    1700V
    97 ns
    850V, 16A, 10 Ω, 15V
    5V @ 15V, 11A
    330 ns
    65nC
    40A
    36ns/160ns
    900μJ (off)
    20V
    -
    5V
    RoHS Compliant
    6.500007g
    yes
    IXG*16N170
    R-PSFM-T3
    230 ns
    NPT
    150ns
    Lead Free
    -
    -
    -
    -
    IXGH25N120A vs IXGH16N170AH1
  • IXGH25N250
    IXGH25N250
    IXYS
    28 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    -
    Tube
    2003
    e1
    Active
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    -
    250W
    -
    -
    3
    -
    1
    Single
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    2.5kV
    60A
    -
    2.5kV
    2500V
    301 ns
    -
    5.2V @ 15V, 75A
    409 ns
    75nC
    200A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    yes
    IXG*25N250
    R-PSFM-T3
    -
    NPT
    -
    Lead Free
    150°C
    -55°C
    No
    -
    IXGH25N120A vs IXGH25N250
  • IXGH20N100
    IXGH20N100
    IXYS
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    -
    Active
    1 (Unlimited)
    3
    -
    -
    Insulated Gate BIP Transistors
    150W
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    150W
    POWER CONTROL
    N-CHANNEL
    1kV
    40A
    TO-247AD
    1kV
    1000V
    30 ns
    800V, 20A, 47 Ω, 15V
    3V @ 15V, 20A
    700 ns
    73nC
    80A
    30ns/350ns
    3.5mJ (off)
    -
    -
    5V
    ROHS3 Compliant
    6.500007g
    yes
    IXG*20N100
    -
    -
    PT
    2000ns
    -
    -
    -
    -
    200ns
    IXGH25N120A vs IXGH20N100
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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