IXYS IXGH10N100AU1
- Part Number:
- IXGH10N100AU1
- Manufacturer:
- IXYS
- Ventron No:
- 2494994-IXGH10N100AU1
- Description:
- IGBT 1000V 20A 100W TO247AD
- ECAD Model:
-
- Datasheet:
- IXGH10N100AU1
IXYS IXGH10N100AU1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH10N100AU1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published1997
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- Additional FeatureHIGH SPEED
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC1kV
- Max Power Dissipation100W
- Terminal PositionSINGLE
- Current Rating20A
- Base Part NumberIXG*10N100
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)4V
- Max Collector Current20A
- Reverse Recovery Time60ns
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage1kV
- Voltage - Collector Emitter Breakdown (Max)1000V
- Turn On Time300 ns
- Test Condition800V, 10A, 150 Ω, 15V
- Vce(on) (Max) @ Vge, Ic4V @ 15V, 10A
- Turn Off Time-Nom (toff)1200 ns
- Gate Charge52nC
- Current - Collector Pulsed (Icm)40A
- Td (on/off) @ 25°C100ns/550ns
- Switching Energy2mJ (off)
- Gate-Emitter Voltage-Max20V
- VCEsat-Max4 V
- Gate-Emitter Thr Voltage-Max5.5V
- RoHS StatusRoHS Compliant
IXGH10N100AU1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH10N100AU1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH10N100AU1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH10N100AU1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH10N100AU1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH10N100AU1 More Descriptions
IGBT 1000V 20A 100W TO247AD
The three parts on the right have similar specifications to IXGH10N100AU1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingBase Part NumberQualification StatusNumber of ElementsConfigurationCase ConnectionInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxVCEsat-MaxGate-Emitter Thr Voltage-MaxRoHS StatusFactory Lead TimeJESD-609 CodePbfree CodeTerminal FinishMax Operating TemperatureMin Operating TemperaturePin CountJESD-30 CodeElement ConfigurationIGBT TypeRadiation HardeningLead FreeCurrent - Collector (Ic) (Max)SeriesPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power DissipationTurn On Delay TimeTurn-Off Delay TimeCollector Emitter Saturation VoltageView Compare
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IXGH10N100AU1Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTube1997ObsoleteNot Applicable3HIGH SPEEDInsulated Gate BIP Transistors1kV100WSINGLE20AIXG*10N100Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORStandardPOWER CONTROLN-CHANNEL4V20A60nsTO-247AD1kV1000V300 ns800V, 10A, 150 Ω, 15V4V @ 15V, 10A1200 ns52nC40A100ns/550ns2mJ (off)20V4 V5.5VRoHS Compliant--------------------- -
Through HoleThrough HoleTO-247-3---Tube2003Active1 (Unlimited)3---250W--IXG*25N250-1-COLLECTORStandardPOWER CONTROLN-CHANNEL2.5kV60A--2.5kV2500V301 ns-5.2V @ 15V, 75A409 ns75nC200A-----ROHS3 Compliant28 Weekse1yesTin/Silver/Copper (Sn/Ag/Cu)150°C-55°C3R-PSFM-T3SingleNPTNoLead Free--------
-
Through HoleThrough HoleTO-247-3---Tube-Active1 (Unlimited)------------Standard---48A--300V------------ROHS3 Compliant------------48A-------
-
Through HoleThrough HoleTO-247-3-SILICON-55°C~150°C TJTube2010Obsolete1 (Unlimited)3ULTRA FASTInsulated Gate BIP Transistors-250W---Not Qualified1-COLLECTORStandardPOWER CONTROLN-CHANNEL5V42A70ns-1.4kV1400V35 ns700V, 20A, 5 Ω, 15V5V @ 15V, 20A524 ns88nC108A19ns/110ns1.35mJ (on), 440μJ (off)20V-5VRoHS Compliant-e1yesTin/Silver/Copper (Sn/Ag/Cu)--3R-PSFM-T3SinglePT-Lead Free-GenX3™NOT SPECIFIEDNOT SPECIFIED250W19 ns110 ns4V
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