Infineon Technologies IRLU8729-701PBF
- Part Number:
- IRLU8729-701PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854248-IRLU8729-701PBF
- Description:
- MOSFET N-CH 30V 58A IPAK
- ECAD Model:
-
- Datasheet:
- IRLU8729-701PBF
Infineon Technologies IRLU8729-701PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLU8729-701PBF.
- MountThrough Hole
- Mounting TypeSurface Mount
- Package / CaseTO-252-4, DPak (3 Leads Tab)
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- ConfigurationSingle
- Power Dissipation-Max55W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8.9m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id2.35V @ 25μA
- Input Capacitance (Ciss) (Max) @ Vds1350pF @ 15V
- Current - Continuous Drain (Id) @ 25°C58A Tc
- Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)58A
- RoHS StatusRoHS Compliant
IRLU8729-701PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1350pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 58A.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IRLU8729-701PBF Features
a continuous drain current (ID) of 58A
a 30V drain to source voltage (Vdss)
IRLU8729-701PBF Applications
There are a lot of Infineon Technologies
IRLU8729-701PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1350pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 58A.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IRLU8729-701PBF Features
a continuous drain current (ID) of 58A
a 30V drain to source voltage (Vdss)
IRLU8729-701PBF Applications
There are a lot of Infineon Technologies
IRLU8729-701PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRLU8729-701PBF More Descriptions
MOSFET,30V,58A,8.9 MOHM,10 NC QG,LOGIC LEVEL,I-PAK,LEADFORM
N-Channel 30 V 8.9 mOhm 16 nC HEXFET Power Mosfet - IPAK
MOSFET N-CH 30V 58A TO251-3-21
N-Channel 30 V 8.9 mOhm 16 nC HEXFET Power Mosfet - IPAK
MOSFET N-CH 30V 58A TO251-3-21
The three parts on the right have similar specifications to IRLU8729-701PBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryTechnologyConfigurationPower Dissipation-MaxOperating ModeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusNumber of PinsSupplier Device PackageTerminationMax Operating TemperatureMin Operating TemperaturePower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningFactory Lead TimeTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureVoltage - Rated DCTerminal PositionPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Number of ElementsCase ConnectionTransistor ApplicationPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Lead FreeView Compare
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IRLU8729-701PBFThrough HoleSurface MountTO-252-4, DPak (3 Leads Tab)-55°C~175°C TJTubeHEXFET®2009Obsolete1 (Unlimited)FET General Purpose PowerMOSFET (Metal Oxide)Single55W TcENHANCEMENT MODEN-Channel8.9m Ω @ 25A, 10V2.35V @ 25μA1350pF @ 15V58A Tc16nC @ 4.5V30V4.5V 10V±20V58ARoHS Compliant-------------------------------------------- -
Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA-55°C~175°C TJTubeHEXFET®2008Obsolete1 (Unlimited)-MOSFET (Metal Oxide)-63W Tc-N-Channel5.7mOhm @ 25A, 10V2.35V @ 25μA1470pF @ 13V81A Tc15nC @ 4.5V25V4.5V 10V±20V81ARoHS Compliant3I-PAKThrough Hole175°C-55°C63W9.7 ns46ns8.5 ns12 ns1.8V20V25V25V1.47nF29 ns8.5mOhm5.7 mΩ1.8 V6.22mm6.7056mm2.3876mmNo SVHCNo-------------------
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Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA-55°C~175°C TJTubeHEXFET®2004Active1 (Unlimited)FET General Purpose PowerMOSFET (Metal Oxide)SINGLE WITH BUILT-IN DIODE79W TcENHANCEMENT MODEN-Channel105m Ω @ 10A, 10V2V @ 250μA800pF @ 25V17A Tc34nC @ 5V-4V 10V±16V17AROHS3 Compliant3----52W7.2 ns53ns26 ns30 ns2V16V100V100V----2 V6.22mm6.7056mm2.3876mmNo SVHCNo12 WeeksSILICONe33EAR99105mOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, ULTRA LOW RESISTANCE100VSINGLE26017A301DRAINSWITCHING60A150 mJLead Free
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Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA-55°C~175°C TJTubeHEXFET®2008Obsolete1 (Unlimited)-MOSFET (Metal Oxide)-48W Tc-N-Channel8.7mOhm @ 21A, 10V2.35V @ 25μA900pF @ 13V57A Tc10nC @ 4.5V25V4.5V 10V±20V57ARoHS Compliant3I-PAKThrough Hole175°C-55°C48W8.4 ns38ns8.9 ns9.1 ns-20V25V25V900pF26 ns12.9mOhm8.7 mΩ1.9 V6.22mm6.7056mm2.3876mmNo SVHCNo-------------------
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