Infineon Technologies IRLU2703
- Part Number:
- IRLU2703
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492441-IRLU2703
- Description:
- MOSFET N-CH 30V 23A I-PAK
- ECAD Model:
-
- Datasheet:
- IRLR/U2703
Infineon Technologies IRLU2703 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLU2703.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2003
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)245
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max45W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs45m Ω @ 14A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds450pF @ 25V
- Current - Continuous Drain (Id) @ 25°C23A Tc
- Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Drain Current-Max (Abs) (ID)20A
- Drain-source On Resistance-Max0.045Ohm
- Pulsed Drain Current-Max (IDM)96A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)77 mJ
- RoHS StatusNon-RoHS Compliant
IRLU2703 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide variety of applications.
IRLU2703 Features Logic-Level Gate Drive Ultra-Low On-Resistance Surface Mount (IRLR2703) Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated
IRLU2703 Features Logic-Level Gate Drive Ultra-Low On-Resistance Surface Mount (IRLR2703) Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated
The three parts on the right have similar specifications to IRLU2703.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsSupplier Device PackageResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeFactory Lead TimeSubcategoryView Compare
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IRLU2703Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubeHEXFET®2003e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)SINGLE24530R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE45W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING45m Ω @ 14A, 10V1V @ 250μA450pF @ 25V23A Tc15nC @ 4.5V30V4.5V 10V±16V20A0.045Ohm96A30V77 mJNon-RoHS Compliant-------------------------------- -
Through HoleTO-251-3 Short Leads, IPak, TO-251AA---55°C~175°C TJTubeHEXFET®2004-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-------89W Tc--N-Channel-4mOhm @ 15A, 10V2.45V @ 250μA2830pF @ 10V120A Tc31nC @ 4.5V20V4.5V 10V±20V-----RoHS CompliantThrough Hole3I-PAK4.2MOhm175°C-55°C20V120A89W14 ns14ns16 ns5.8 ns120A2V20V20V20V2.83nF33 ns5.7mOhm4 mΩ2 V6.1mm6.6mm2.3mmNo SVHCNoLead Free--
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Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubeHEXFET®1998e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)SINGLE24530R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE107W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING19m Ω @ 33A, 10V1V @ 250μA1600pF @ 25V55A Tc50nC @ 4.5V30V4.5V 10V±16V20A0.019Ohm220A30V240 mJNon-RoHS Compliant-------------------------------
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Through HoleTO-251-3 Short Leads, IPak, TO-251AA-SILICON-55°C~175°C TJTubeHEXFET®2004e3Active1 (Unlimited)3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, ULTRA LOW RESISTANCEMOSFET (Metal Oxide)SINGLE26030--1SINGLE WITH BUILT-IN DIODE79W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING105m Ω @ 10A, 10V2V @ 250μA800pF @ 25V17A Tc34nC @ 5V-4V 10V±16V--60A-150 mJROHS3 CompliantThrough Hole3-105mOhm--100V17A52W7.2 ns53ns26 ns30 ns17A2V16V100V100V----2 V6.22mm6.7056mm2.3876mmNo SVHCNoLead Free12 WeeksFET General Purpose Power
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