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IRLS4030TRLPBF

Infineon Technologies IRLS4030TRLPBF

Part Number:
IRLS4030TRLPBF
Manufacturer:
Infineon Technologies
Ventron No:
2479369-IRLS4030TRLPBF
Description:
MOSFET N-CH 100V 180A D2PAK
ECAD Model:
Datasheet:
IRLS4030TRLPBF

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Specifications
Infineon Technologies IRLS4030TRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLS4030TRLPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    3.9MOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    370W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    370W
  • Turn On Delay Time
    74 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.3m Ω @ 110A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    11360pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    180A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 4.5V
  • Rise Time
    330ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    170 ns
  • Turn-Off Delay Time
    110 ns
  • Continuous Drain Current (ID)
    180A
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    100V
  • Nominal Vgs
    2.5 V
  • Height
    4.572mm
  • Length
    10.668mm
  • Width
    9.65mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLS4030TRLPBF Description
IRLS4030TRLPBF is a 100V Single N-Channel HEXFET Power MOSFET. The Infineon IRLS4030TRLPBF is optimized for Logic Level Drive and broadest availability from distribution partners. The Power MOSFET IRLS4030TRLPBF can be applied in DC Motor Drive, High-Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High-Speed Power Switching, and Hard Switched and High-Frequency Circuits. The IRLS4030TRLPBF is offered in the  D2-Pak package. It is specified for operation from –55°C to 175°C.

IRLS4030TRLPBF Features
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Logic level: Optimized for 10 V gate-drive voltage (called normal level), and capable of     being driven at 4.5 V gate-drive voltage
Industry-standard surface-mount power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered

IRLS4030TRLPBF Applications
DC Motor Drive
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
IRLS4030TRLPBF More Descriptions
N CH POWER MOSFET, HEXFET, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Con
Single N-Channel 100 V 3.9 mOhm 93 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 180A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Benefits: RoHS Compliant; Logic Level | Target Applications: Battery Operated Drive
MOSFET, N-CH, 100V, 180A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5
Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Product Comparison
The three parts on the right have similar specifications to IRLS4030TRLPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Case Connection
    Threshold Voltage
    Avalanche Energy Rating (Eas)
    Pbfree Code
    Max Operating Temperature
    Min Operating Temperature
    Terminal Position
    Configuration
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    View Compare
  • IRLS4030TRLPBF
    IRLS4030TRLPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2009
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    3.9MOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    370W Tc
    Single
    ENHANCEMENT MODE
    370W
    74 ns
    N-Channel
    SWITCHING
    4.3m Ω @ 110A, 10V
    2.5V @ 250μA
    11360pF @ 50V
    180A Tc
    130nC @ 4.5V
    330ns
    4.5V 10V
    ±16V
    170 ns
    110 ns
    180A
    16V
    100V
    2.5 V
    4.572mm
    10.668mm
    9.65mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLS3036TRLPBF
    IRLS3036TRLPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2005
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    1.9MOhm
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    380W Tc
    Single
    ENHANCEMENT MODE
    380W
    66 ns
    N-Channel
    SWITCHING
    2.4m Ω @ 165A, 10V
    2.5V @ 250μA
    11210pF @ 50V
    195A Tc
    140nC @ 4.5V
    220ns
    4.5V 10V
    ±16V
    110 ns
    110 ns
    270A
    16V
    60V
    2.5 V
    4.826mm
    10.668mm
    9.652mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin
    260
    30
    DRAIN
    2.5V
    290 mJ
    -
    -
    -
    -
    -
    -
    -
    IRLS4030TRLPBF vs IRLS3036TRLPBF
  • IRLS3034PBF
    IRLS3034PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2009
    -
    Discontinued
    1 (Unlimited)
    -
    EAR99
    1.7MOhm
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    375W Tc
    Single
    -
    375W
    65 ns
    N-Channel
    -
    1.7m Ω @ 195A, 10V
    2.5V @ 250μA
    10315pF @ 25V
    195A Tc
    162nC @ 4.5V
    827ns
    4.5V 10V
    ±20V
    355 ns
    97 ns
    343A
    20V
    40V
    -
    4.572mm
    10.668mm
    9.65mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    2.5V
    -
    -
    -
    -
    -
    -
    -
    -
    IRLS4030TRLPBF vs IRLS3034PBF
  • IRLS3034TRL7PP
    IRLS3034TRL7PP
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-7, D2Pak (6 Leads Tab), TO-263CB
    7
    -
    -
    Tape & Reel (TR)
    HEXFET®
    2009
    -
    Active
    1 (Unlimited)
    6
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G6
    1
    380W Tc
    -
    ENHANCEMENT MODE
    380W
    71 ns
    N-Channel
    SWITCHING
    1.4m Ω @ 200A, 10V
    2.5V @ 250μA
    10990pF @ 40V
    240A Tc
    180nC @ 4.5V
    590ns
    4.5V 10V
    ±20V
    200 ns
    94 ns
    240A
    20V
    40V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    DRAIN
    -
    250 mJ
    yes
    175°C
    -55°C
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    0.0014Ohm
    1540A
    IRLS4030TRLPBF vs IRLS3034TRL7PP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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