IRL640STRLPBF

Vishay Siliconix IRL640STRLPBF

Part Number:
IRL640STRLPBF
Manufacturer:
Vishay Siliconix
Ventron No:
2484231-IRL640STRLPBF
Description:
MOSFET N-CH 200V 17A D2PAK
ECAD Model:
Datasheet:
IRL640STRLPBF

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Specifications
Vishay Siliconix IRL640STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRL640STRLPBF.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    180mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    200V
  • Power Dissipation-Max
    3.1W Ta 125W Tc
  • Element Configuration
    Single
  • Current
    17A
  • Power Dissipation
    3.1W
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    180mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1800pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    17A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    66nC @ 5V
  • Rise Time
    83ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    52 ns
  • Turn-Off Delay Time
    44 ns
  • Continuous Drain Current (ID)
    17A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    200V
  • Input Capacitance
    4.39nF
  • Drain to Source Resistance
    180mOhm
  • Rds On Max
    2.7 mΩ
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRL640STRLPBF Overview
A device's maximal input capacitance is 1800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 17A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 44 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 180mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).

IRL640STRLPBF Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 44 ns
single MOSFETs transistor is 180mOhm
a 200V drain to source voltage (Vdss)


IRL640STRLPBF Applications
There are a lot of Vishay Siliconix
IRL640STRLPBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRL640STRLPBF More Descriptions
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
Trans MOSFET N-CH 200V 17A 3-Pin (2 Tab) D2PAK T/R
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):180mohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:SMD-220 ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRL640STRLPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Recovery Time
    Series
    ECCN Code
    Subcategory
    Threshold Voltage
    REACH SVHC
    View Compare
  • IRL640STRLPBF
    IRL640STRLPBF
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    Active
    1 (Unlimited)
    180mOhm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    200V
    3.1W Ta 125W Tc
    Single
    17A
    3.1W
    8 ns
    N-Channel
    180mOhm @ 10A, 5V
    2V @ 250μA
    1800pF @ 25V
    17A Tc
    66nC @ 5V
    83ns
    200V
    4V 5V
    ±10V
    52 ns
    44 ns
    17A
    10V
    200V
    4.39nF
    180mOhm
    2.7 mΩ
    4.83mm
    10.67mm
    9.65mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • IRL630SPBF
    8 Weeks
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~150°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    400mOhm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    -
    3.1W Ta 74W Tc
    Single
    -
    3.1W
    8 ns
    N-Channel
    400mOhm @ 5.4A, 5V
    2V @ 250μA
    1100pF @ 25V
    9A Tc
    40nC @ 10V
    57ns
    200V
    4V 5V
    ±10V
    33 ns
    38 ns
    9A
    10V
    -
    1.1nF
    400mOhm
    400 mΩ
    4.83mm
    10.67mm
    9.65mm
    No
    ROHS3 Compliant
    Lead Free
    340 ns
    -
    -
    -
    -
    -
  • IRL6283MTRPBF
    -
    -
    Surface Mount
    Surface Mount
    DirectFET™ Isometric MD
    8
    -
    -
    -40°C~150°C TJ
    Tape & Reel (TR)
    2013
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    2.1W Ta 63W Tc
    Single
    -
    2.1W
    23 ns
    N-Channel
    0.75m Ω @ 50A, 10V
    1.1V @ 100μA
    8292pF @ 10V
    38A Ta 211A Tc
    158nC @ 4.5V
    160ns
    20V
    2.5V 4.5V
    ±12V
    192 ns
    116 ns
    211A
    12V
    -
    -
    -
    -
    -
    -
    -
    No
    RoHS Compliant
    Lead Free
    -
    HEXFET®, StrongIRFET™
    EAR99
    FET General Purpose Power
    800mV
    No SVHC
  • IRL630
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    MOSFET (Metal Oxide)
    -
    1
    -
    74W Tc
    Single
    -
    -
    8 ns
    N-Channel
    400mOhm @ 5.4A, 5V
    2V @ 250μA
    1100pF @ 25V
    9A Tc
    40nC @ 10V
    57ns
    200V
    4V 5V
    ±10V
    33 ns
    38 ns
    9A
    10V
    200V
    1.1nF
    400mOhm
    400 mΩ
    9.01mm
    10.41mm
    4.7mm
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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