Vishay Siliconix IRL640STRLPBF
- Part Number:
- IRL640STRLPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2484231-IRL640STRLPBF
- Description:
- MOSFET N-CH 200V 17A D2PAK
- Datasheet:
- IRL640STRLPBF
Vishay Siliconix IRL640STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRL640STRLPBF.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance180mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Voltage200V
- Power Dissipation-Max3.1W Ta 125W Tc
- Element ConfigurationSingle
- Current17A
- Power Dissipation3.1W
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs180mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C17A Tc
- Gate Charge (Qg) (Max) @ Vgs66nC @ 5V
- Rise Time83ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)52 ns
- Turn-Off Delay Time44 ns
- Continuous Drain Current (ID)17A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage200V
- Input Capacitance4.39nF
- Drain to Source Resistance180mOhm
- Rds On Max2.7 mΩ
- Height4.83mm
- Length10.67mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRL640STRLPBF Overview
A device's maximal input capacitance is 1800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 17A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 44 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 180mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).
IRL640STRLPBF Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 44 ns
single MOSFETs transistor is 180mOhm
a 200V drain to source voltage (Vdss)
IRL640STRLPBF Applications
There are a lot of Vishay Siliconix
IRL640STRLPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 1800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 17A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 44 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 180mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).
IRL640STRLPBF Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 44 ns
single MOSFETs transistor is 180mOhm
a 200V drain to source voltage (Vdss)
IRL640STRLPBF Applications
There are a lot of Vishay Siliconix
IRL640STRLPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRL640STRLPBF More Descriptions
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
Trans MOSFET N-CH 200V 17A 3-Pin (2 Tab) D2PAK T/R
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):180mohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:SMD-220 ;RoHS Compliant: Yes
Trans MOSFET N-CH 200V 17A 3-Pin (2 Tab) D2PAK T/R
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):180mohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:SMD-220 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRL640STRLPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeRecovery TimeSeriesECCN CodeSubcategoryThreshold VoltageREACH SVHCView Compare
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IRL640STRLPBF8 WeeksTinSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~150°C TJTape & Reel (TR)2015Active1 (Unlimited)180mOhm150°C-55°CMOSFET (Metal Oxide)11200V3.1W Ta 125W TcSingle17A3.1W8 nsN-Channel180mOhm @ 10A, 5V2V @ 250μA1800pF @ 25V17A Tc66nC @ 5V83ns200V4V 5V±10V52 ns44 ns17A10V200V4.39nF180mOhm2.7 mΩ4.83mm10.67mm9.65mmNoROHS3 CompliantLead Free-------
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8 Weeks-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~150°C TJTube2011Active1 (Unlimited)400mOhm150°C-55°CMOSFET (Metal Oxide)11-3.1W Ta 74W TcSingle-3.1W8 nsN-Channel400mOhm @ 5.4A, 5V2V @ 250μA1100pF @ 25V9A Tc40nC @ 10V57ns200V4V 5V±10V33 ns38 ns9A10V-1.1nF400mOhm400 mΩ4.83mm10.67mm9.65mmNoROHS3 CompliantLead Free340 ns-----
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--Surface MountSurface MountDirectFET™ Isometric MD8---40°C~150°C TJTape & Reel (TR)2013Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1-2.1W Ta 63W TcSingle-2.1W23 nsN-Channel0.75m Ω @ 50A, 10V1.1V @ 100μA8292pF @ 10V38A Ta 211A Tc158nC @ 4.5V160ns20V2.5V 4.5V±12V192 ns116 ns211A12V-------NoRoHS CompliantLead Free-HEXFET®, StrongIRFET™EAR99FET General Purpose Power800mVNo SVHC
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--Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2011Obsolete1 (Unlimited)-150°C-55°CMOSFET (Metal Oxide)-1-74W TcSingle--8 nsN-Channel400mOhm @ 5.4A, 5V2V @ 250μA1100pF @ 25V9A Tc40nC @ 10V57ns200V4V 5V±10V33 ns38 ns9A10V200V1.1nF400mOhm400 mΩ9.01mm10.41mm4.7mmNoNon-RoHS Compliant-------
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