Infineon Technologies IRG7PH42UD1MPBF
- Part Number:
- IRG7PH42UD1MPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497106-IRG7PH42UD1MPBF
- Description:
- IGBT 1200V 85A 313W TO247AD
- ECAD Model:
-
- Datasheet:
- IRG7PH42UD1MPBF
Infineon Technologies IRG7PH42UD1MPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG7PH42UD1MPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.500007g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2013
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation313W
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max313W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current85A
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage1.7V
- Test Condition600V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
- IGBT TypeTrench
- Gate Charge270nC
- Current - Collector Pulsed (Icm)200A
- Td (on/off) @ 25°C-/270ns
- Switching Energy1.21mJ (off)
- Gate-Emitter Thr Voltage-Max6V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRG7PH42UD1MPBF Description
IRG7PH42UD1MPBF is a 1200v insulated gate bipolar transistor with an ultra-low VF diode. The Infineon IRG7PH42UD1MPBF is optimized for induction heating and soft-switching applications. The IRG7PH42UD1MPBF provides High Efficiency due to Low VCE(on), low switching losses, and Ultra-low VF. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG7PH42UD1MPBF is in the TO-247AD package with 313W power dissipation.
IRG7PH42UD1MPBF Features
Low VcE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for LM① Positive VcE (ON) temperature coefficient Tight parameter distribution Lead-free package
IRG7PH42UD1MPBF Applications
Automotive Hybrid, electric & powertrain systems Communications equipment Datacom module Enterprise systems Enterprise machine
IRG7PH42UD1MPBF is a 1200v insulated gate bipolar transistor with an ultra-low VF diode. The Infineon IRG7PH42UD1MPBF is optimized for induction heating and soft-switching applications. The IRG7PH42UD1MPBF provides High Efficiency due to Low VCE(on), low switching losses, and Ultra-low VF. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG7PH42UD1MPBF is in the TO-247AD package with 313W power dissipation.
IRG7PH42UD1MPBF Features
Low VcE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for LM① Positive VcE (ON) temperature coefficient Tight parameter distribution Lead-free package
IRG7PH42UD1MPBF Applications
Automotive Hybrid, electric & powertrain systems Communications equipment Datacom module Enterprise systems Enterprise machine
IRG7PH42UD1MPBF More Descriptions
Trans IGBT Chip N-CH 1200V 85A 3-Pin TO-247AD Tube
Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel
Compliant Through Hole 6.500007 g Lead Free Rail/Tube TO-247-3 3 No
IGBT Transistors 1200V UltraFast Copack IGBT
Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel
Compliant Through Hole 6.500007 g Lead Free Rail/Tube TO-247-3 3 No
IGBT Transistors 1200V UltraFast Copack IGBT
The three parts on the right have similar specifications to IRG7PH42UD1MPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationElement ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Collector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Thr Voltage-MaxRadiation HardeningRoHS StatusLead FreeView Compare
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IRG7PH42UD1MPBFThrough HoleThrough HoleTO-247-336.500007g-55°C~150°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors313WSingleStandard313WN-CHANNEL2V85A1.2kV1200V1.7V600V, 30A, 10 Ω, 15V2V @ 15V, 30ATrench270nC200A-/270ns1.21mJ (off)6VNoRoHS CompliantLead Free- -
--------ObsoleteNot Applicable---------------------RoHS Compliant-
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--------ObsoleteNot Applicable---------------------RoHS Compliant-
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--------ObsoleteNot Applicable---------------------RoHS Compliant-
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