Infineon Technologies IRG7PH30K10PBF
- Part Number:
- IRG7PH30K10PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497072-IRG7PH30K10PBF
- Description:
- IGBT 1200V 33A 210W TO247AC
- ECAD Model:
-
- Datasheet:
- IRG7PH30K10PBF
Infineon Technologies IRG7PH30K10PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG7PH30K10PBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN OVER NICKEL
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation210W
- Peak Reflow Temperature (Cel)250
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Rise Time-Max41ns
- Element ConfigurationSingle
- Power Dissipation210W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.35V
- Max Collector Current33A
- JEDEC-95 CodeTO-247AC
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage2.05V
- Turn On Time35 ns
- Test Condition600V, 9A, 22 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 9A
- Turn Off Time-Nom (toff)400 ns
- IGBT TypeTrench
- Gate Charge45nC
- Current - Collector Pulsed (Icm)27A
- Td (on/off) @ 25°C14ns/110ns
- Switching Energy530μJ (on), 380μJ (off)
- Gate-Emitter Thr Voltage-Max7.5V
- Fall Time-Max (tf)56ns
- Height20.7mm
- Length15.87mm
- Width5.31mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRG7PH30K10PBF Features
Low VCE (ON) Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
10 μS short Circuit SOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) Temperature Co-Efficient
Tight Parameter Distribution
Lead-Free Package
IRG7PH30K10PBF Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation
IRG7PH30K10PBF Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation
IRG7PH30K10PBF More Descriptions
TRENCH IGBT 1200V, 10A, SHORTCIRCUIT PROTECTED SINGLE IGBT IN TO-247 PACKAGE
Trans IGBT Chip N-CH 1.2KV 33A 3-Pin(3 Tab) TO-247AC
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
Compliant Through Hole 5.31 mm 20.7 mm 15.87 mm Lead Free No SVHC TO-247-3
French Electronic Distributor since 1988
IGBT,N CH,1200V,33A,TO-247AC; Transistor Type:IGBT; DC Collector Current:33A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:210W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:210W
Trans IGBT Chip N-CH 1.2KV 33A 3-Pin(3 Tab) TO-247AC
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
Compliant Through Hole 5.31 mm 20.7 mm 15.87 mm Lead Free No SVHC TO-247-3
French Electronic Distributor since 1988
IGBT,N CH,1200V,33A,TO-247AC; Transistor Type:IGBT; DC Collector Current:33A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:210W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:210W
The three parts on the right have similar specifications to IRG7PH30K10PBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsRise Time-MaxElement ConfigurationPower DissipationCase ConnectionInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Collector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountReach Compliance CodeBase Part NumberPower - MaxCurrent - Collector (Ic) (Max)Power Dissipation-Max (Abs)Gate-Emitter Voltage-MaxCollector Current-Max (IC)View Compare
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IRG7PH30K10PBFThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTube2009e3Obsolete1 (Unlimited)3EAR99MATTE TIN OVER NICKELInsulated Gate BIP Transistors210W25030141nsSingle210WCOLLECTORStandardPOWER CONTROLN-CHANNEL2.35V33ATO-247AC1.2kV1200V2.05V35 ns600V, 9A, 22 Ω, 15V2.35V @ 15V, 9A400 nsTrench45nC27A14ns/110ns530μJ (on), 380μJ (off)7.5V56ns20.7mm15.87mm5.31mmNo SVHCNoRoHS CompliantLead Free--------- -
-Through HoleTO-247-3---55°C~150°C TJTube2013-Obsolete1 (Unlimited)-EAR99-Insulated Gate BIP Transistors--------Standard-N-CHANNEL----1200V--600V, 20A, 10 Ω, 15V2.2V @ 15V, 20A-Trench130nC150A-/160ns620μJ (off)6V105ns-----RoHS Compliant-NOcompliantIRG7PH35179W50A179W30V-
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Surface MountSurface MountDie---40°C~175°C TJBulk--ObsoleteNot Applicable---Insulated Gate BIP Transistors--------Standard-N-CHANNEL2.3V--1.2kV1200V--600V, 150A, 1 Ω, 15V2.3V @ 15V, 150A--745nC-70ns/330ns-7.5V------RoHS Compliant-------30V150A
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---------ObsoleteNot Applicable-------------------------------------RoHS Compliant---------
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