IRG7PH28UD1MPBF

Infineon Technologies IRG7PH28UD1MPBF

Part Number:
IRG7PH28UD1MPBF
Manufacturer:
Infineon Technologies
Ventron No:
2497094-IRG7PH28UD1MPBF
Description:
IGBT 1200V 30A 115W TO247AC
ECAD Model:
Datasheet:
IRG7PH28UD1(M)PbF

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Specifications
Infineon Technologies IRG7PH28UD1MPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG7PH28UD1MPBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2013
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    115W
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    115W
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.3V
  • Max Collector Current
    30A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Test Condition
    600V, 15A, 22 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 15A
  • IGBT Type
    Trench
  • Gate Charge
    90nC
  • Current - Collector Pulsed (Icm)
    100A
  • Td (on/off) @ 25°C
    -/229ns
  • Switching Energy
    543μJ (off)
  • Gate-Emitter Thr Voltage-Max
    6V
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IRG7PH28UD1MPBF Description
The IRG7PH28UD1MPBF  is an insulated gate bipolar transistor with an ultra-low VF Diode for induction heating and soft switching applicaitons.

IRG7PH28UD1MPBF Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Ultra-low VF
1300Vpk repetitive transient capacity
100% of the parts tested for ILM
Positive VCE (ON) temperature coefficient
Tight parameter distribution
Lead-free package 

IRG7PH28UD1MPBF Applications
Induction heating & soft switching applicaitons

IRG7PH28UD1MPBF More Descriptions
IGBT 1200V 30A 115W TO247AC
Compliant Through Hole TO-247-3 3 No Single 30 A 115 W
Insulated Gate Bipolar Transistors
Product Comparison
The three parts on the right have similar specifications to IRG7PH28UD1MPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Max Power Dissipation
    Element Configuration
    Input Type
    Power - Max
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Thr Voltage-Max
    Radiation Hardening
    RoHS Status
    Surface Mount
    Reach Compliance Code
    Base Part Number
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Gate-Emitter Voltage-Max
    Fall Time-Max (tf)
    Operating Temperature (Max)
    Collector-Emitter Voltage-Max
    View Compare
  • IRG7PH28UD1MPBF
    IRG7PH28UD1MPBF
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~150°C TJ
    Tube
    2013
    Obsolete
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    115W
    Single
    Standard
    115W
    N-CHANNEL
    2.3V
    30A
    1.2kV
    1200V
    600V, 15A, 22 Ω, 15V
    2.3V @ 15V, 15A
    Trench
    90nC
    100A
    -/229ns
    543μJ (off)
    6V
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG7PH35UD1MPBF
    -
    Through Hole
    TO-247-3
    -
    -55°C~150°C TJ
    Tube
    2013
    Obsolete
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    -
    -
    Standard
    179W
    N-CHANNEL
    -
    -
    -
    1200V
    600V, 20A, 10 Ω, 15V
    2.2V @ 15V, 20A
    Trench
    130nC
    150A
    -/160ns
    620μJ (off)
    6V
    -
    RoHS Compliant
    NO
    compliant
    IRG7PH35
    50A
    179W
    30V
    105ns
    -
    -
  • IRG7CH75K10EF
    -
    -
    -
    -
    -
    -
    -
    Obsolete
    Not Applicable
    -
    Insulated Gate BIP Transistors
    -
    -
    -
    -
    N-CHANNEL
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    7.5V
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    30V
    -
    175°C
    1200V
  • IRG7CH75UED-R
    -
    -
    -
    -
    -
    -
    -
    Obsolete
    Not Applicable
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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