Infineon Technologies IRG7PG42UD-EPBF

Name: IRG7PG42UD-EPBF
Brand: Infineon Technologies
SKU: 2497138-IRG7PG42UD-EPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRG7PG42UD-EPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2497138-IRG7PG42UD-EPBF

Description:: IGBT 1000V 85A 320W TO247AD

ECAD Model:

Datasheet:: IRG7PG42UD-EPBF

Specifications

Infineon Technologies IRG7PG42UD-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG7PG42UD-EPBF.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
320W
Reach Compliance Code
unknown
Element Configuration
Single
Input Type
Standard
Power - Max
320W
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
85A
Reverse Recovery Time
153 ns
Collector Emitter Breakdown Voltage
1kV
Voltage - Collector Emitter Breakdown (Max)
1000V
Test Condition
600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
IGBT Type
Trench
Gate Charge
157nC
Current - Collector Pulsed (Icm)
90A
Td (on/off) @ 25°C
25ns/229ns
Switching Energy
2.11mJ (on), 1.18mJ (off)
RoHS Status
RoHS Compliant

Description

IRG7PG42UD-EPBF Description A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.

IRG7PG42UD-EPBF Features
Low VcE (oN) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for Positive VcE(ontemperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-free package IRG7PG42UD-EPBF Applications
U.P.S. Welding Solar Inverter Induction heating

IRG7PG42UD-EPBF More Descriptions

LXESXXT Series 0201 7 V 0.45 pF Silicon ESD Protection Device - CSP-2
Trans IGBT Chip N-CH 1000V 85A 3-Pin TO-247AD Tube
G6.7, 1000V, 30A, CO-PAK-247AD, TUBE

Product Comparison

The three parts on the right have similar specifications to IRG7PG42UD-EPBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Max Power Dissipation

Reach Compliance Code

Element Configuration

Input Type

Power - Max

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

RoHS Status

Subcategory

Operating Temperature (Max)

Polarity/Channel Type

Collector-Emitter Voltage-Max

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Number of Pins

Power Dissipation

Collector Emitter Saturation Voltage

Radiation Hardening

View Compare
IRG7PG42UD-EPBF

Infineon Technologies

Through Hole

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

2014

Obsolete

1 (Unlimited)

EAR99

320W

unknown

Single

Standard

320W

2V

85A

153 ns

1kV

1000V

600V, 30A, 10 Ω, 15V

2V @ 15V, 30A

Trench

157nC

90A

25ns/229ns

2.11mJ (on), 1.18mJ (off)

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-
IRG7CH75K10EF

Infineon Technologies

-

-

-

-

-

-

Obsolete

Not Applicable

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

Insulated Gate BIP Transistors

175°C

N-CHANNEL

1200V

30V

7.5V

-

-

-

-

IRG7PG42UD-EPBF vs IRG7CH75K10EF
IRG7CH28UED

Infineon Technologies

-

-

-

-

-

-

Obsolete

Not Applicable

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

IRG7PG42UD-EPBF vs IRG7CH28UED
IRG7PH28UD1PBF

Infineon Technologies

Through Hole

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

2013

Obsolete

1 (Unlimited)

EAR99

115W

-

Single

Standard

-

2.3V

30A

-

1.2kV

1200V

600V, 15A, 22 Ω, 15V

2.3V @ 15V, 15A

Trench

90nC

100A

-/229ns

543μJ (off)

RoHS Compliant

Insulated Gate BIP Transistors

-

N-CHANNEL

-

-

6V

3

115W

2.3V

No

IRG7PG42UD-EPBF vs IRG7PH28UD1PBF