IRFU9214PBF

Vishay Siliconix IRFU9214PBF

Part Number:
IRFU9214PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2486129-IRFU9214PBF
Description:
MOSFET P-CH 250V 2.7A I-PAK
ECAD Model:
Datasheet:
IRFU9214PBF

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Specifications
Vishay Siliconix IRFU9214PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU9214PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Weight
    329.988449mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    3Ohm
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    50W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    50W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3 Ω @ 1.7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    220pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 10V
  • Rise Time
    14ns
  • Drain to Source Voltage (Vdss)
    250V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    17 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    2.7A
  • Threshold Voltage
    -4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -250V
  • Nominal Vgs
    -4 V
  • Height
    6.22mm
  • Length
    6.73mm
  • Width
    2.38mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFU9214PBF Overview
A device's maximal input capacitance is 220pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -4V threshold voltage.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFU9214PBF Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of -250V voltage
the turn-off delay time is 20 ns
a threshold voltage of -4V
a 250V drain to source voltage (Vdss)


IRFU9214PBF Applications
There are a lot of Vishay Siliconix
IRFU9214PBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFU9214PBF More Descriptions
IRFU9214 Series P-Channel 250 V 3 Ohm 50 W Power Mosfet - IPAK (TO-251)
Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Trans MOSFET P-CH Si 250V 2.7A 3-Pin(3 Tab) IPAK / HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0¦¸ , ID = -2.7A ) | MOSFET P-CH 250V 2.7A I-PAK
Product Comparison
The three parts on the right have similar specifications to IRFU9214PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Voltage - Rated DC
    Current Rating
    Recovery Time
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Terminal Position
    JESD-30 Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFU9214PBF
    IRFU9214PBF
    8 Weeks
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    329.988449mg
    SILICON
    -55°C~150°C TJ
    Tube
    2016
    Active
    1 (Unlimited)
    3
    EAR99
    3Ohm
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    260
    40
    3
    1
    1
    50W Tc
    Single
    ENHANCEMENT MODE
    50W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    3 Ω @ 1.7A, 10V
    4V @ 250μA
    220pF @ 25V
    2.7A Tc
    14nC @ 10V
    14ns
    250V
    10V
    ±20V
    17 ns
    20 ns
    2.7A
    -4V
    20V
    -250V
    -4 V
    6.22mm
    6.73mm
    2.38mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU3504ZPBF
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    -
    -
    -55°C~175°C TJ
    Tube
    2005
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    90W Tc
    Single
    -
    90W
    -
    15 ns
    N-Channel
    -
    9m Ω @ 42A, 10V
    4V @ 250μA
    1510pF @ 25V
    42A Tc
    45nC @ 10V
    74ns
    -
    10V
    ±20V
    38 ns
    30 ns
    77A
    4V
    20V
    40V
    -
    6.1mm
    6.6mm
    2.3mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    HEXFET®
    40V
    42A
    27 ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU18N15D
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -
    -55°C~175°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    110W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    125m Ω @ 11A, 10V
    5.5V @ 250μA
    900pF @ 25V
    18A Tc
    43nC @ 10V
    -
    150V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU1205
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    1998
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    AVALANCHE RATED, ULTRA LOW RESISTANCE
    MOSFET (Metal Oxide)
    245
    30
    -
    1
    -
    107W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    27m Ω @ 26A, 10V
    4V @ 250μA
    1300pF @ 25V
    44A Tc
    65nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    -
    -
    -
    NO
    e0
    Tin/Lead (Sn/Pb)
    SINGLE
    R-PSIP-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    20A
    0.027Ohm
    160A
    55V
    210 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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