Vishay Siliconix IRFU9214PBF
- Part Number:
- IRFU9214PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2486129-IRFU9214PBF
- Description:
- MOSFET P-CH 250V 2.7A I-PAK
- Datasheet:
- IRFU9214PBF
Vishay Siliconix IRFU9214PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU9214PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Weight329.988449mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance3Ohm
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max50W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation50W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3 Ω @ 1.7A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds220pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.7A Tc
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Rise Time14ns
- Drain to Source Voltage (Vdss)250V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)17 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)2.7A
- Threshold Voltage-4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-250V
- Nominal Vgs-4 V
- Height6.22mm
- Length6.73mm
- Width2.38mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFU9214PBF Overview
A device's maximal input capacitance is 220pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -4V threshold voltage.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFU9214PBF Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of -250V voltage
the turn-off delay time is 20 ns
a threshold voltage of -4V
a 250V drain to source voltage (Vdss)
IRFU9214PBF Applications
There are a lot of Vishay Siliconix
IRFU9214PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 220pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -4V threshold voltage.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFU9214PBF Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of -250V voltage
the turn-off delay time is 20 ns
a threshold voltage of -4V
a 250V drain to source voltage (Vdss)
IRFU9214PBF Applications
There are a lot of Vishay Siliconix
IRFU9214PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFU9214PBF More Descriptions
IRFU9214 Series P-Channel 250 V 3 Ohm 50 W Power Mosfet - IPAK (TO-251)
Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Trans MOSFET P-CH Si 250V 2.7A 3-Pin(3 Tab) IPAK / HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0¦¸ , ID = -2.7A ) | MOSFET P-CH 250V 2.7A I-PAK
Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Trans MOSFET P-CH Si 250V 2.7A 3-Pin(3 Tab) IPAK / HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0¦¸ , ID = -2.7A ) | MOSFET P-CH 250V 2.7A I-PAK
The three parts on the right have similar specifications to IRFU9214PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesVoltage - Rated DCCurrent RatingRecovery TimeSurface MountJESD-609 CodeTerminal FinishTerminal PositionJESD-30 CodeQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFU9214PBF8 WeeksThrough HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3329.988449mgSILICON-55°C~150°C TJTube2016Active1 (Unlimited)3EAR993OhmAVALANCHE RATEDMOSFET (Metal Oxide)2604031150W TcSingleENHANCEMENT MODE50WDRAIN11 nsP-ChannelSWITCHING3 Ω @ 1.7A, 10V4V @ 250μA220pF @ 25V2.7A Tc14nC @ 10V14ns250V10V±20V17 ns20 ns2.7A-4V20V-250V-4 V6.22mm6.73mm2.38mmUnknownNoROHS3 CompliantLead Free-----------------
-
-Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3---55°C~175°C TJTube2005Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----90W TcSingle-90W-15 nsN-Channel-9m Ω @ 42A, 10V4V @ 250μA1510pF @ 25V42A Tc45nC @ 10V74ns-10V±20V38 ns30 ns77A4V20V40V-6.1mm6.6mm2.3mmNo SVHCNoRoHS CompliantLead FreeHEXFET®40V42A27 ns------------
-
--Through HoleTO-251-3 Short Leads, IPak, TO-251AA----55°C~175°C TJTube2000Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----110W Tc-----N-Channel-125m Ω @ 11A, 10V5.5V @ 250μA900pF @ 25V18A Tc43nC @ 10V-150V10V±30V------------Non-RoHS Compliant-HEXFET®---------------
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--Through HoleTO-251-3 Short Leads, IPak, TO-251AA--SILICON-55°C~175°C TJTube1998Obsolete1 (Unlimited)3EAR99-AVALANCHE RATED, ULTRA LOW RESISTANCEMOSFET (Metal Oxide)24530-1-107W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING27m Ω @ 26A, 10V4V @ 250μA1300pF @ 25V44A Tc65nC @ 10V-55V10V±20V------------Non-RoHS Compliant-HEXFET®---NOe0Tin/Lead (Sn/Pb)SINGLER-PSIP-T3Not QualifiedSINGLE WITH BUILT-IN DIODE20A0.027Ohm160A55V210 mJ
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