IRFU9110

Vishay Siliconix IRFU9110

Part Number:
IRFU9110
Manufacturer:
Vishay Siliconix
Ventron No:
2491632-IRFU9110
Description:
MOSFET P-CH 100V 3.1A I-PAK
ECAD Model:
Datasheet:
IRFU9110

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Specifications
Vishay Siliconix IRFU9110 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU9110.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Supplier Device Package
    TO-251AA
  • Weight
    329.988449mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta 25W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    10 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    1.2Ohm @ 1.9A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3.1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8.7nC @ 10V
  • Rise Time
    27ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    17 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    3.1A
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    200pF
  • Drain to Source Resistance
    1.2Ohm
  • Rds On Max
    1.2 Ω
  • Height
    6.22mm
  • Length
    6.73mm
  • Width
    2.38mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
IRFU9110 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 200pF @ 25V.This device has a continuous drain current (ID) of [3.1A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 15 ns.MOSFETs have 1.2Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFU9110 Features
a continuous drain current (ID) of 3.1A
the turn-off delay time is 15 ns
single MOSFETs transistor is 1.2Ohm
a 100V drain to source voltage (Vdss)


IRFU9110 Applications
There are a lot of Vishay Siliconix
IRFU9110 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFU9110 More Descriptions
3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs | MOSFET P-CH 100V 3.1A I-PAK
MOSFET P-CH 100V 3.1A I-PAK
MOSFET P-CHANNEL 100V
Product Comparison
The three parts on the right have similar specifications to IRFU9110.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Series
    Resistance
    Voltage - Rated DC
    Current Rating
    Number of Elements
    Power Dissipation
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    REACH SVHC
    Lead Free
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Subcategory
    View Compare
  • IRFU9110
    IRFU9110
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    TO-251AA
    329.988449mg
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    2.5W Ta 25W Tc
    Single
    10 ns
    P-Channel
    1.2Ohm @ 1.9A, 10V
    4V @ 250μA
    200pF @ 25V
    3.1A Tc
    8.7nC @ 10V
    27ns
    100V
    10V
    ±20V
    17 ns
    15 ns
    3.1A
    20V
    200pF
    1.2Ohm
    1.2 Ω
    6.22mm
    6.73mm
    2.38mm
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU3704PBF
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    4
    IPAK (TO-251)
    -
    -55°C~175°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    -
    90W Tc
    -
    98 ns
    N-Channel
    9.5mOhm @ 15A, 10V
    3V @ 250μA
    1996pF @ 10V
    75A Tc
    19nC @ 4.5V
    98ns
    20V
    10V
    ±20V
    -
    5 ns
    62A
    20V
    1.996nF
    14mOhm
    9.5 mΩ
    -
    -
    -
    -
    RoHS Compliant
    HEXFET®
    9.5Ohm
    20V
    62A
    1
    90W
    3V
    20V
    20V
    3 V
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU1205
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -
    -55°C~175°C TJ
    Tube
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    107W Tc
    -
    -
    N-Channel
    27m Ω @ 26A, 10V
    4V @ 250μA
    1300pF @ 25V
    44A Tc
    65nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    HEXFET®
    -
    -
    -
    1
    -
    -
    -
    -
    -
    -
    -
    NO
    SILICON
    e0
    3
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, ULTRA LOW RESISTANCE
    SINGLE
    245
    30
    R-PSIP-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    20A
    0.027Ohm
    160A
    55V
    210 mJ
    -
  • IRFU3709
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    120W Tc
    -
    -
    N-Channel
    9m Ω @ 15A, 10V
    3V @ 250μA
    2672pF @ 16V
    90A Tc
    41nC @ 4.5V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    HEXFET®
    -
    -
    -
    1
    -
    -
    -
    -
    -
    -
    -
    NO
    SILICON
    e3
    3
    EAR99
    MATTE TIN OVER NICKEL
    -
    SINGLE
    260
    30
    R-PSIP-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    -
    86A
    0.0065Ohm
    340A
    30V
    100 mJ
    FET General Purpose Power
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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