Vishay Siliconix IRFU9110
- Part Number:
- IRFU9110
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2491632-IRFU9110
- Description:
- MOSFET P-CH 100V 3.1A I-PAK
- Datasheet:
- IRFU9110
Vishay Siliconix IRFU9110 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU9110.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Supplier Device PackageTO-251AA
- Weight329.988449mg
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max2.5W Ta 25W Tc
- Element ConfigurationSingle
- Turn On Delay Time10 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs1.2Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.1A Tc
- Gate Charge (Qg) (Max) @ Vgs8.7nC @ 10V
- Rise Time27ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)17 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)3.1A
- Gate to Source Voltage (Vgs)20V
- Input Capacitance200pF
- Drain to Source Resistance1.2Ohm
- Rds On Max1.2 Ω
- Height6.22mm
- Length6.73mm
- Width2.38mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
IRFU9110 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 200pF @ 25V.This device has a continuous drain current (ID) of [3.1A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 15 ns.MOSFETs have 1.2Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFU9110 Features
a continuous drain current (ID) of 3.1A
the turn-off delay time is 15 ns
single MOSFETs transistor is 1.2Ohm
a 100V drain to source voltage (Vdss)
IRFU9110 Applications
There are a lot of Vishay Siliconix
IRFU9110 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 200pF @ 25V.This device has a continuous drain current (ID) of [3.1A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 15 ns.MOSFETs have 1.2Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFU9110 Features
a continuous drain current (ID) of 3.1A
the turn-off delay time is 15 ns
single MOSFETs transistor is 1.2Ohm
a 100V drain to source voltage (Vdss)
IRFU9110 Applications
There are a lot of Vishay Siliconix
IRFU9110 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFU9110 More Descriptions
3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs | MOSFET P-CH 100V 3.1A I-PAK
MOSFET P-CH 100V 3.1A I-PAK
MOSFET P-CHANNEL 100V
MOSFET P-CH 100V 3.1A I-PAK
MOSFET P-CHANNEL 100V
The three parts on the right have similar specifications to IRFU9110.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusSeriesResistanceVoltage - Rated DCCurrent RatingNumber of ElementsPower DissipationThreshold VoltageDrain to Source Breakdown VoltageDual Supply VoltageNominal VgsREACH SVHCLead FreeSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)SubcategoryView Compare
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IRFU9110Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3TO-251AA329.988449mg-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)12.5W Ta 25W TcSingle10 nsP-Channel1.2Ohm @ 1.9A, 10V4V @ 250μA200pF @ 25V3.1A Tc8.7nC @ 10V27ns100V10V±20V17 ns15 ns3.1A20V200pF1.2Ohm1.2 Ω6.22mm6.73mm2.38mmNoNon-RoHS Compliant-----------------------------------
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Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA4IPAK (TO-251)--55°C~175°C TJTube2004Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)-90W Tc-98 nsN-Channel9.5mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V75A Tc19nC @ 4.5V98ns20V10V±20V-5 ns62A20V1.996nF14mOhm9.5 mΩ----RoHS CompliantHEXFET®9.5Ohm20V62A190W3V20V20V3 VNo SVHCLead Free----------------------
-
-Through HoleTO-251-3 Short Leads, IPak, TO-251AA----55°C~175°C TJTube1998Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-107W Tc--N-Channel27m Ω @ 26A, 10V4V @ 250μA1300pF @ 25V44A Tc65nC @ 10V-55V10V±20V-----------Non-RoHS CompliantHEXFET®---1-------NOSILICONe03EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, ULTRA LOW RESISTANCESINGLE24530R-PSIP-T3Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING20A0.027Ohm160A55V210 mJ-
-
-Through HoleTO-251-3 Short Leads, IPak, TO-251AA----55°C~150°C TJTube2001Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-120W Tc--N-Channel9m Ω @ 15A, 10V3V @ 250μA2672pF @ 16V90A Tc41nC @ 4.5V-30V4.5V 10V±20V-----------Non-RoHS CompliantHEXFET®---1-------NOSILICONe33EAR99MATTE TIN OVER NICKEL-SINGLE26030R-PSIP-T3Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN-86A0.0065Ohm340A30V100 mJFET General Purpose Power
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