Vishay Siliconix IRFU9010
- Part Number:
- IRFU9010
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2853374-IRFU9010
- Description:
- MOSFET P-CH 50V 5.3A I-PAK
- Datasheet:
- IRFU9010
Vishay Siliconix IRFU9010 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU9010.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Supplier Device PackageTO-251AA
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-50V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-5.3A
- Power Dissipation-Max25W Tc
- Element ConfigurationSingle
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs500mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds240pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.3A Tc
- Gate Charge (Qg) (Max) @ Vgs9.1nC @ 10V
- Rise Time47ns
- Drain to Source Voltage (Vdss)50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)5.3A
- Drain to Source Breakdown Voltage-50V
- Input Capacitance240pF
- Rds On Max500 mΩ
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFU9010 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 240pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -50V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -50V.The transistor must receive a 50V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFU9010 Features
a continuous drain current (ID) of 5.3A
a drain-to-source breakdown voltage of -50V voltage
a 50V drain to source voltage (Vdss)
IRFU9010 Applications
There are a lot of Vishay Siliconix
IRFU9010 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 240pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -50V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -50V.The transistor must receive a 50V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFU9010 Features
a continuous drain current (ID) of 5.3A
a drain-to-source breakdown voltage of -50V voltage
a 50V drain to source voltage (Vdss)
IRFU9010 Applications
There are a lot of Vishay Siliconix
IRFU9010 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFU9010 More Descriptions
Trans MOSFET P-CH 50V 5.3A 3-Pin(3 Tab) IPAK
Transistors RF MOSFET Small Signal P-Chan 50V 5.3
MOSFET P-CH 50V 5.3A I-PAK
Transistors RF MOSFET Small Signal P-Chan 50V 5.3
MOSFET P-CH 50V 5.3A I-PAK
The three parts on the right have similar specifications to IRFU9010.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingPower Dissipation-MaxElement ConfigurationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain to Source Breakdown VoltageInput CapacitanceRds On MaxRoHS StatusLead FreeSeriesTerminationNumber of ElementsPower DissipationTurn On Delay TimeFall Time (Typ)Turn-Off Delay TimeReverse Recovery TimeThreshold VoltageGate to Source Voltage (Vgs)Dual Supply VoltageRecovery TimeDrain to Source ResistanceNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningView Compare
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IRFU9010Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3TO-251AA-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C-50VMOSFET (Metal Oxide)-5.3A25W TcSingleP-Channel500mOhm @ 2.8A, 10V4V @ 250μA240pF @ 25V5.3A Tc9.1nC @ 10V47ns50V10V±20V5.3A-50V240pF500 mΩNon-RoHS CompliantContains Lead--------------------
-
Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3IPAK (TO-251)-55°C~175°C TJTube2004Obsolete1 (Unlimited)175°C-55°C-MOSFET (Metal Oxide)-110W Tc-N-Channel16mOhm @ 32A, 10V4V @ 100μA2190pF @ 25V42A Tc75nC @ 10V65ns75V10V±20V53A75V2.19nF16 mΩRoHS Compliant-HEXFET®Through Hole1110W16 ns29 ns44 ns31 ns4V20V75V47 ns16mOhm4 V6.22mm6.7056mm2.3876mmNo SVHCNo
-
Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3--55°C~175°C TJTube2005Obsolete1 (Unlimited)--40VMOSFET (Metal Oxide)42A90W TcSingleN-Channel9m Ω @ 42A, 10V4V @ 250μA1510pF @ 25V42A Tc45nC @ 10V74ns-10V±20V77A40V--RoHS CompliantLead FreeHEXFET®--90W15 ns38 ns30 ns-4V20V-27 ns--6.1mm6.6mm2.3mmNo SVHCNo
-
Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA---55°C~150°C TJTube2000Obsolete1 (Unlimited)--50VMOSFET (Metal Oxide)8.2A25W Tc-N-Channel200m Ω @ 4.2A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V--10V±20V8.2A---Non-RoHS CompliantContains Lead-------------------
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