IRFU9010

Vishay Siliconix IRFU9010

Part Number:
IRFU9010
Manufacturer:
Vishay Siliconix
Ventron No:
2853374-IRFU9010
Description:
MOSFET P-CH 50V 5.3A I-PAK
ECAD Model:
Datasheet:
IRFU9010

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Specifications
Vishay Siliconix IRFU9010 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU9010.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Supplier Device Package
    TO-251AA
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -50V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -5.3A
  • Power Dissipation-Max
    25W Tc
  • Element Configuration
    Single
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    500mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    240pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.3A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    9.1nC @ 10V
  • Rise Time
    47ns
  • Drain to Source Voltage (Vdss)
    50V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    5.3A
  • Drain to Source Breakdown Voltage
    -50V
  • Input Capacitance
    240pF
  • Rds On Max
    500 mΩ
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFU9010 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 240pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -50V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -50V.The transistor must receive a 50V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFU9010 Features
a continuous drain current (ID) of 5.3A
a drain-to-source breakdown voltage of -50V voltage
a 50V drain to source voltage (Vdss)


IRFU9010 Applications
There are a lot of Vishay Siliconix
IRFU9010 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFU9010 More Descriptions
Trans MOSFET P-CH 50V 5.3A 3-Pin(3 Tab) IPAK
Transistors RF MOSFET Small Signal P-Chan 50V 5.3
MOSFET P-CH 50V 5.3A I-PAK
Product Comparison
The three parts on the right have similar specifications to IRFU9010.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Power Dissipation-Max
    Element Configuration
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Rds On Max
    RoHS Status
    Lead Free
    Series
    Termination
    Number of Elements
    Power Dissipation
    Turn On Delay Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Reverse Recovery Time
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Dual Supply Voltage
    Recovery Time
    Drain to Source Resistance
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    View Compare
  • IRFU9010
    IRFU9010
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    TO-251AA
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -50V
    MOSFET (Metal Oxide)
    -5.3A
    25W Tc
    Single
    P-Channel
    500mOhm @ 2.8A, 10V
    4V @ 250μA
    240pF @ 25V
    5.3A Tc
    9.1nC @ 10V
    47ns
    50V
    10V
    ±20V
    5.3A
    -50V
    240pF
    500 mΩ
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU2307ZPBF
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    IPAK (TO-251)
    -55°C~175°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    110W Tc
    -
    N-Channel
    16mOhm @ 32A, 10V
    4V @ 100μA
    2190pF @ 25V
    42A Tc
    75nC @ 10V
    65ns
    75V
    10V
    ±20V
    53A
    75V
    2.19nF
    16 mΩ
    RoHS Compliant
    -
    HEXFET®
    Through Hole
    1
    110W
    16 ns
    29 ns
    44 ns
    31 ns
    4V
    20V
    75V
    47 ns
    16mOhm
    4 V
    6.22mm
    6.7056mm
    2.3876mm
    No SVHC
    No
  • IRFU3504ZPBF
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    -
    -55°C~175°C TJ
    Tube
    2005
    Obsolete
    1 (Unlimited)
    -
    -
    40V
    MOSFET (Metal Oxide)
    42A
    90W Tc
    Single
    N-Channel
    9m Ω @ 42A, 10V
    4V @ 250μA
    1510pF @ 25V
    42A Tc
    45nC @ 10V
    74ns
    -
    10V
    ±20V
    77A
    40V
    -
    -
    RoHS Compliant
    Lead Free
    HEXFET®
    -
    -
    90W
    15 ns
    38 ns
    30 ns
    -
    4V
    20V
    -
    27 ns
    -
    -
    6.1mm
    6.6mm
    2.3mm
    No SVHC
    No
  • IRFU010
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    50V
    MOSFET (Metal Oxide)
    8.2A
    25W Tc
    -
    N-Channel
    200m Ω @ 4.2A, 10V
    4V @ 250μA
    250pF @ 25V
    8.2A Tc
    10nC @ 10V
    -
    -
    10V
    ±20V
    8.2A
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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