Infineon Technologies IRFU5305PBF

Name: IRFU5305PBF
Brand: Infineon Technologies
SKU: 2479714-IRFU5305PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFU5305PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479714-IRFU5305PBF

Description:: MOSFET P-CH 55V 31A I-PAK

ECAD Model:

Datasheet:: IRFU5305PBF

Specifications

Infineon Technologies IRFU5305PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFU5305PBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
65mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
-55V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
260
Current Rating
-28A
Time@Peak Reflow Temperature-Max (s)
30
Lead Pitch
2.28mm
Lead Length
9.65mm
Number of Elements
1
Power Dissipation-Max
110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
89W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
31A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Rise Time
66ns
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
63 ns
Turn-Off Delay Time
39 ns
Continuous Drain Current (ID)
-31A
Threshold Voltage
-4V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
25A
Drain to Source Breakdown Voltage
-55V
Avalanche Energy Rating (Eas)
280 mJ
Nominal Vgs
-4 V
Height
6.1mm
Length
6.6mm
Width
2.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRFU5305PBF Description
IRFU5305PBF is a -55V Single N-Channel Power MOSFET. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery-powered applications. The IRFU5305PBF is available in a variety of surface mount and through-hole packages with industry-standard footprints for ease of design.

IRFU5305PBF Features
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry-standard through-hole power package

IRFU5305PBF Applications
DC motors
Inverters
SMPS
Lighting
Load switches
Battery-powered applications

IRFU5305PBF More Descriptions

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;I-Pak (TO-251AA);PD 110W
Single P-Channel 55 V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-251AA
-55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
Transistor Polarity:p Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:22A; On Resistance Rds(On):0.065Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = -31 / Drain-Source Voltage (Vds) V = -55 / ON Resistance (Rds(on)) mOhm = 65 / Gate-Source Voltage V = 20 / Fall Time ns = 63 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
MOSFET, P, -55V, -28A, I-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:69W; Transistor Case Style:TO-251AA; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:I-PAK; Avalanche Single Pulse Energy Eas:280mJ; Capacitance Ciss Typ:1200pF; Current Iar:16A; Current Id Max:-31A; Current Temperature:25°C; Fall Time tf:63ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; On State resistance @ Vgs = 10V:65mohm; Package / Case:IPAK; Power Dissipation Pd:69W; Power Dissipation Pd:110W; Pulse Current Idm:110A; Repetitive Avalanche Energy Max:6.9mJ; Rise Time:66ns; Termination Type:Through Hole; Turn Off Time:39ns; Turn On Time:14ns; Voltage Vds Typ:-55V

Product Comparison

The three parts on the right have similar specifications to IRFU5305PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Lead Pitch

Lead Length

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Terminal Position

JESD-30 Code

Qualification Status

Configuration

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

View Compare
IRFU5305PBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

e3

Active

1 (Unlimited)

3

EAR99

65mOhm

AVALANCHE RATED, HIGH RELIABILITY

Other Transistors

-55V

MOSFET (Metal Oxide)

260

-28A

30

2.28mm

9.65mm

1

110W Tc

Single

ENHANCEMENT MODE

89W

DRAIN

14 ns

P-Channel

SWITCHING

65m Ω @ 16A, 10V

4V @ 250μA

1200pF @ 25V

31A Tc

63nC @ 10V

66ns

55V

10V

±20V

63 ns

39 ns

-31A

-4V

20V

25A

-55V

280 mJ

-4 V

6.1mm

6.6mm

2.3mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-
IRFU18N15D

Infineon Technologies

-

-

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2000

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

110W Tc

-

-

-

-

-

N-Channel

-

125m Ω @ 11A, 10V

5.5V @ 250μA

900pF @ 25V

18A Tc

43nC @ 10V

-

150V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

IRFU5305PBF vs IRFU18N15D
IRFU3709

Infineon Technologies

-

-

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

SILICON

-55°C~150°C TJ

Tube

HEXFET®

2001

e3

Obsolete

1 (Unlimited)

3

EAR99

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

260

-

30

-

-

1

120W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

-

9m Ω @ 15A, 10V

3V @ 250μA

2672pF @ 16V

90A Tc

41nC @ 4.5V

-

30V

4.5V 10V

±20V

-

-

-

-

-

86A

-

100 mJ

-

-

-

-

-

-

Non-RoHS Compliant

-

NO

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

0.0065Ohm

340A

30V

IRFU5305PBF vs IRFU3709
IRFU010

Vishay Siliconix

-

-

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~150°C TJ

Tube

-

2000

-

Obsolete

1 (Unlimited)

-

-

-

-

-

50V

MOSFET (Metal Oxide)

-

8.2A

-

-

-

-

25W Tc

-

-

-

-

-

N-Channel

-

200m Ω @ 4.2A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

-

-

10V

±20V

-

-

8.2A

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

IRFU5305PBF vs IRFU010

Certification

Related parts for IRFU5305PBF

IRFU2607ZPBF

Infineon Technologies

MOSFET N-CH 75V 42A I-PAK
IRFU3706-701PBF

Infineon Technologies

MOSFET N-CH 20V 75A IPAK
IRFU2307ZPBF

Infineon Technologies

MOSFET N-CH 75V 42A I-PAK
IRFU4104-701PBF

Infineon Technologies

MOSFET N-CH 40V 42A IPAK
IRFU3504ZPBF

Infineon Technologies

MOSFET N-CH 40V 42A I-PAK
IRFU3704PBF

Infineon Technologies

MOSFET N-CH 20V 75A I-PAK
IRFU18N15D

Infineon Technologies

MOSFET N-CH 150V 18A I-PAK
IRFU1205

Infineon Technologies

MOSFET N-CH 55V 44A I-PAK
IRFU3709

Infineon Technologies

MOSFET N-CH 30V 90A I-PAK
IRFU010

Vishay Siliconix

MOSFET N-CH 50V 8.2A I-PAK

Popular Search Part Number Related Keywords Search Tags

IRFU5305PBF Price
IRFU5305PBF Picture
IRFU5305PBF Buy
IRFU5305PBF Distributor
IRFU5305PBF Image
IRFU5305PBF Inquiry
IRFU5305PBF Manufacturer
IRFU5305PBF Part
IRFU5305PBF Description
IRFU5305PBF Technical Data
IRFU5305PBF Stock
IRFU5305PBF Wholesales
IRFU5305PBF PDF
IRFU5305PBF Inventory
IRFU5305PBF Supplier
IRFU5305PBF Datasheet
IRFU5305PBF Rfq
IRFU5305PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	Trans MOSFET P-CH Si 55V 31A 3-Pin(3 Tab) IPAK Tub RoHS: Compliant	342	1 $0.7346 10 $0.5474 100 $0.4695 500 $0.4332 1000 $0.3827 2500 $0.3489 10000 $0.3392 25000 $0.3338
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	MOSFET P-CH 55V 31A I-PAK RoHS: Compliant	21127	1 $1.17 75 $0.93947 150 $0.822 525 $0.63745 1050 $0.50325
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	Trans MOSFET P-CH Si 55V 31A 3-Pin(3 Tab) IPAK Tub RoHS: Compliant	2340	30 $0.3888 300 $0.36 1250 $0.3312
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	Trans MOSFET P-CH Si 55V 31A 3-Pin(3 Tab) IPAK Tub RoHS: Compliant	342	21 $0.544 100 $0.468
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(3 Tab) IPAK - Rail RoHS: Compliant	2606	1 $0.6269 10 $0.5489 25 $0.5469 50 $0.5459 100 $0.4699 500 $0.4619 1000 $0.3699
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	Trans MOSFET P-CH 55V 31A 3-Pin(3 Tab) IPAK (Alt: RoHS: Compliant	0	3000 $0.32857 6000 $0.31944 9000 $0.31081 15000 $0.30263 30000 $0.2987 75000 $0.29487 150000 $0.29114
IRFU5305PBF. DISTI #IRFU5305PBF.	Infineon Technologies AG	Transistor Polarity:P Channel, Continuous Drain C	0	1 $1.01 10 $0.854 100 $0.656 500 $0.58 1000 $0.458 5000 $0.406
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -55V, RDS(ON) 0.065O RoHS: Compliant	1061	1 $1.173 10 $1.035 100 $0.902 500 $0.782 1000 $0.69
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	Power Field-Effect Transistor, 31A I(D), 55V, 0.06 RoHS: Compliant	1205	1 $0.45 25 $0.42 100 $0.4 500 $0.39 1000 $0.37
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	Single P-Channel 55 V 0.065 Ohm 63 nC HEXFET Power RoHS: Compliant	3000	25 $0.485 300 $0.435 1250 $0.385
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	MOSFET MOSFT P-Ch -55V -28A 65mOhm 42nC RoHS: Compliant	6909	1 $1.01 10 $0.854 100 $0.656 500 $0.58 1000 $0.458 2500 $0.406
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	MOSFET P-CHANNEL 55V 31A IPAK, EA	502	1 $2 20 $0.5 38 $0.47
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	MOSFET P-CHANNEL 55V 31A IPAK, TU	957	20 $0.5 38 $0.47
IRFU5305PBF DISTI #IRFU5305PBF	International Rectifier		552
IRFU5305PBF DISTI #IRFU5305PBF	International Rectifier	31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFE	375	1 $1.48 15 $0.74 69 $0.518
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	Trans MOSFET P-CH Si 55V 31A 3-Pin(3 Tab) IPAK Tub RoHS: Compliant	1288	5 $1.07 10 $0.916 50 $0.616 100 $0.538
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	Trans MOSFET P-CH Si 55V 31A 3-Pin(3 Tab) IPAK Tub RoHS: Compliant	2344	5 $1.17 25 $0.853 50 $0.761 100 $0.64 500 $0.574 1000 $0.531
IRFU5305PBF DISTI #IRFU5305PBF	Infineon Technologies AG	MOSFET, P, -55V, -28A, I-PAK RoHS: Compliant	600	1 $1.6 10 $1.36 100 $1.04 500 $0.918 1000 $0.725 2500 $0.643

IRFU530~~(3)~~
IRFU53~~(3)~~
IRFU5~~(10)~~
IRFU~~(66)~~
IRF~~(69)~~

Infineon Technologies IRFU5305PBF

Quick Request Quote

LIS3DHTR Alternatives, Specifications, Dimensions and Package

AMS1117-3.3 Voltage Regulator Instructions for Use: From Principle to Application

BTS50085-1TMA Alternatives, Advantages, Usage and Other Details

A Complete Guide to the TP4056 Battery Charger Module