Infineon Technologies IRFU48ZPBF

Name: IRFU48ZPBF
Brand: Infineon Technologies
SKU: 3071623-IRFU48ZPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFU48ZPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3071623-IRFU48ZPBF

Description:: MOSFET N-CH 55V 42A I-PAK

ECAD Model:

Datasheet:: IRFU48ZPBF

Specifications

Infineon Technologies IRFU48ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFU48ZPBF.

Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
91W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
11m Ω @ 37A, 10V
Vgs(th) (Max) @ Id
4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
1720pF @ 25V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
42A
Drain-source On Resistance-Max
0.011Ohm
Pulsed Drain Current-Max (IDM)
250A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
74 mJ
RoHS Status
RoHS Compliant

Description

IRFU48ZPBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 74 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1720pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 42A.Peak drain current is 250A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 55V.For this transistor to work, a voltage 55V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFU48ZPBF Features
the avalanche energy rating (Eas) is 74 mJ
based on its rated peak drain current 250A.
a 55V drain to source voltage (Vdss)

IRFU48ZPBF Applications
There are a lot of Infineon Technologies
IRFU48ZPBF applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

IRFU48ZPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8.86 Milliohms;ID 42A;I-Pak (TO-251AA);-55de
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHSInfineon SCT
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:42A; On State Resistance:0.011ohm; Case Style:I-PAK; Alternate Case Style:TO-251; Current Temperature:25°C; Current, Idm Pulse:250A; Full Power Rating Temperature:25°C; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Power Dissipation Pd:91W; SMD Marking:IRFU48ZPBF; Voltage, Vds Max:55V; Transistor Case Style:I-PAK

Product Comparison

The three parts on the right have similar specifications to IRFU48ZPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Power Dissipation

Turn On Delay Time

Rise Time

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

REACH SVHC

Lead Free

View Compare
IRFU48ZPBF

Infineon Technologies

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

260

compliant

30

R-PSIP-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

91W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

11m Ω @ 37A, 10V

4V @ 50μA

1720pF @ 25V

42A Tc

60nC @ 10V

55V

10V

±20V

42A

0.011Ohm

250A

55V

74 mJ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFU4104-701PBF

Infineon Technologies

Surface Mount

TO-252-4, DPak (3 Leads Tab)

-

-

-55°C~175°C TJ

Tube

HEXFET®

2003

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

140W Tc

-

-

N-Channel

-

5.5m Ω @ 42A, 10V

4V @ 250μA

2950pF @ 25V

42A Tc

89nC @ 10V

40V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFU48ZPBF vs IRFU4104-701PBF
IRFU3704PBF

Infineon Technologies

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

90W Tc

-

-

N-Channel

-

9.5mOhm @ 15A, 10V

3V @ 250μA

1996pF @ 10V

75A Tc

19nC @ 4.5V

20V

10V

±20V

-

-

-

-

-

RoHS Compliant

Through Hole

4

IPAK (TO-251)

9.5Ohm

175°C

-55°C

20V

62A

90W

98 ns

98ns

5 ns

62A

3V

20V

20V

20V

1.996nF

14mOhm

9.5 mΩ

3 V

No SVHC

Lead Free

IRFU48ZPBF vs IRFU3704PBF
IRFU010

Vishay Siliconix

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~150°C TJ

Tube

-

2000

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

25W Tc

-

-

N-Channel

-

200m Ω @ 4.2A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

-

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

Through Hole

-

-

-

-

-

50V

8.2A

-

-

-

-

8.2A

-

-

-

-

-

-

-

-

-

Contains Lead

IRFU48ZPBF vs IRFU010