Infineon Technologies IRFU4105

Name: IRFU4105
Brand: Infineon Technologies
SKU: 3586861-IRFU4105
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFU4105

Manufacturer:: Infineon Technologies

Ventron No:: 3586861-IRFU4105

Description:: MOSFET N-CH 55V 27A I-PAK

ECAD Model:

Datasheet:: IRFU4105

Specifications

Infineon Technologies IRFU4105 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFU4105.

Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
68W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
27A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
30A
Drain-source On Resistance-Max
0.0245Ohm
Pulsed Drain Current-Max (IDM)
120A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
29 mJ
RoHS Status
Non-RoHS Compliant

Description

IRFU4105 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 29 mJ.The maximum input capacitance of this device is 700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 30A.There is no pulsed drain current maximum for this device based on its rated peak drain current 120A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 55V.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFU4105 Features
the avalanche energy rating (Eas) is 29 mJ
based on its rated peak drain current 120A.
a 55V drain to source voltage (Vdss)

IRFU4105 Applications
There are a lot of Infineon Technologies
IRFU4105 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRFU4105 More Descriptions

MOSFET N-CH 55V 27A I-PAK
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
55V 25.000A D-PAK OEMs, CMs ONLY (NO BROKERS)

Product Comparison

The three parts on the right have similar specifications to IRFU4105.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Termination

Max Operating Temperature

Min Operating Temperature

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Reverse Recovery Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Input Capacitance

Recovery Time

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

View Compare
IRFU4105

Infineon Technologies

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

260

30

R-PSIP-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

68W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

45m Ω @ 16A, 10V

4V @ 250μA

700pF @ 25V

27A Tc

34nC @ 10V

55V

10V

±20V

30A

0.0245Ohm

120A

55V

29 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFU2307ZPBF

Infineon Technologies

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

-

110W Tc

-

-

N-Channel

-

16mOhm @ 32A, 10V

4V @ 100μA

2190pF @ 25V

42A Tc

75nC @ 10V

75V

10V

±20V

-

-

-

-

-

RoHS Compliant

Through Hole

3

IPAK (TO-251)

Through Hole

175°C

-55°C

110W

16 ns

65ns

29 ns

44 ns

31 ns

53A

4V

20V

75V

75V

2.19nF

47 ns

16mOhm

16 mΩ

4 V

6.22mm

6.7056mm

2.3876mm

No SVHC

No

IRFU4105 vs IRFU2307ZPBF
IRFU18N15D

Infineon Technologies

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2000

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

110W Tc

-

-

N-Channel

-

125m Ω @ 11A, 10V

5.5V @ 250μA

900pF @ 25V

18A Tc

43nC @ 10V

150V

10V

±30V

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFU4105 vs IRFU18N15D
IRFU1205

Infineon Technologies

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

e0

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

AVALANCHE RATED, ULTRA LOW RESISTANCE

-

MOSFET (Metal Oxide)

SINGLE

245

30

R-PSIP-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

107W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

27m Ω @ 26A, 10V

4V @ 250μA

1300pF @ 25V

44A Tc

65nC @ 10V

55V

10V

±20V

20A

0.027Ohm

160A

55V

210 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFU4105 vs IRFU1205

Certification

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IRFU4105 Specification

Part Number	Manufacturers	Description	Stock	Price
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 30A 3-Pin(3 Tab) IPAK Tub RoHS: Compliant	2685	1 $0.8952 10 $0.7874 100 $0.64 500 $0.575 1000 $0.4706 3000 $0.4303 9000 $0.4193
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	MOSFET N-CH 55V 30A I-PAK RoHS: Compliant	6021	1 $1.35 10 $1.198 100 $0.9468 500 $0.73422 1000 $0.57965
IRFU4105 DISTI #IRFU4105	Infineon Technologies AG	MOSFET N-CH 55V 27A I-PAK RoHS: Not Compliant	0
IRFU4105Z DISTI #IRFU4105Z	Infineon Technologies AG	MOSFET N-CH 55V 30A I-PAK RoHS: Not Compliant	0
IRFU4105PBF DISTI #IRFU4105PBF	Infineon Technologies AG	MOSFET N-CH 55V 27A I-PAK RoHS: Compliant	0
IRFU4105ZTR DISTI #IRFU4105ZTR	Vishay Siliconix	MOSFET N-CH 55V 30A I-PAK RoHS: Not Compliant	0
IRFU4105ZTRL DISTI #IRFU4105ZTRL	Vishay Siliconix	MOSFET N-CH 55V 30A I-PAK RoHS: Not Compliant	0
IRFU4105ZTRR DISTI #IRFU4105ZTRR	Vishay Siliconix	MOSFET N-CH 55V 30A I-PAK RoHS: Not Compliant	0
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 30A 3-Pin(3 Tab) IPAK Tub RoHS: Compliant	2685	17 $0.7855 100 $0.6387 500 $0.574 1000 $0.4699
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 30A 3-Pin(3 Tab) IPAK Tub RoHS: Compliant	1352	26 $0.9446 100 $0.7258 500 $0.6413 1000 $0.5059 3000 $0.4493 9000 $0.432
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(3 Tab) IPAK - Rail RoHS: Compliant	0	3000 $0.4039 6000 $0.3899 12000 $0.3759 18000 $0.3629 30000 $0.3569
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(3 Tab) IPAK (Alt: RoHS: Compliant	0	3000 $0.40143 6000 $0.39028 9000 $0.37973 15000 $0.36974 30000 $0.36494 75000 $0.36026 150000 $0.3557
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	MOSFET Transistor, N Channel, 30 A, 55 V, 24.5 moh	98	1 $1.16 10 $0.984 100 $0.756 500 $0.668 1000 $0.527 2500 $0.489 10000 $0.45
IRFU4105PBF DISTI #IRFU4105PBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.045Oh RoHS: Compliant	0	1275 $1.19 2550 $1.166 6375 $1.131 12750 $1.083 31875 $1.012
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	MOSFET, N Ch., Automotive, 55V, 30A, 24.5 MOH RoHS: Compliant	0	825 $1.26
IRFU4105ZPBF DISTI #IRFU4105ZPBF	International Rectifier	Power Field-Effect Transistor, 30A I(D), 55V, 0.02 RoHS: Compliant	5510	1 $0.57 25 $0.53 100 $0.51 500 $0.49 1000 $0.46
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg RoHS: Compliant	3873	1 $1.16 10 $0.984 100 $0.756 500 $0.668 1000 $0.527
IRFU4105PBF DISTI #IRFU4105PBF	Infineon Technologies AG	MOSFET MOSFT 55V 25A 45mOhm 22.7nC RoHS: Compliant	0
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	MOSFET N-CHANNEL 55V 30A HEXFET IPAK, PK	110	5 $0.9 25 $0.766 50 $0.678 100 $0.588 250 $0.54
IRFU4105 DISTI #IRFU4105	International Rectifier	RoHS: Not Compliant	70
IRFU4105PBF DISTI #IRFU4105PBF	International Rectifier	RoHS: Compliant	525
IRFU4105 DISTI #IRFU4105	International Rectifier		354
IRFU4105PBF DISTI #IRFU4105PBF	Infineon Technologies AG	MOSFET, N, 55V, 25A, I-PAK RoHS: Compliant	0	1 $1.46 10 $1.2 100 $0.975 500 $0.871 1000 $0.772 2500 $0.718 10000 $0.694 25000 $0.65
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	MOSFET, N, I-PAK RoHS: Compliant	98	1 $1.84 10 $1.56 100 $1.2 500 $1.07 1000 $0.834 3000 $0.741 9000 $0.74
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	MOSFET, N, I-PAK RoHS: Compliant	98	5 $0.444 25 $0.334
IRFU4105ZPBF DISTI #IRFU4105ZPBF	Infineon Technologies AG	MOSFETs	1370	5 $1.38 25 $1.01 50 $0.901 100 $0.757 500 $0.68 1000 $0.629

IRFU410~~(13)~~
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IRFU~~(66)~~
IRF~~(69)~~

Infineon Technologies IRFU4105

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