Vishay Siliconix IRFU320
- Part Number:
- IRFU320
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2853273-IRFU320
- Description:
- MOSFET N-CH 400V 3.1A I-PAK
- Datasheet:
- IRFU320
Vishay Siliconix IRFU320 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU320.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Supplier Device PackageTO-251AA
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max2.5W Ta 42W Tc
- Element ConfigurationSingle
- Power Dissipation2.5W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.8Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.1A Tc
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Rise Time14ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)3.1A
- Gate to Source Voltage (Vgs)20V
- Input Capacitance350pF
- Drain to Source Resistance1.8Ohm
- Rds On Max1.8 Ω
- RoHS StatusNon-RoHS Compliant
IRFU320 Overview
The maximum input capacitance of this device is 350pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.8Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 400V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFU320 Features
a continuous drain current (ID) of 3.1A
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.8Ohm
a 400V drain to source voltage (Vdss)
IRFU320 Applications
There are a lot of Vishay Siliconix
IRFU320 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 350pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.8Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 400V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFU320 Features
a continuous drain current (ID) of 3.1A
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.8Ohm
a 400V drain to source voltage (Vdss)
IRFU320 Applications
There are a lot of Vishay Siliconix
IRFU320 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFU320 More Descriptions
Trans MOSFET N-CH 400V 3.1A 3-Pin(3 Tab) IPAK
MOSFET N-CH 400V 3.1A I-PAK
MOSFET N-CH 400V 3.1A I-PAK
The three parts on the right have similar specifications to IRFU320.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxRoHS StatusSeriesTerminationReverse Recovery TimeThreshold VoltageDrain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFU320Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3TO-251AA-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)12.5W Ta 42W TcSingle2.5W10 nsN-Channel1.8Ohm @ 1.9A, 10V4V @ 250μA350pF @ 25V3.1A Tc20nC @ 10V14ns400V10V±20V13 ns30 ns3.1A20V350pF1.8Ohm1.8 ΩNon-RoHS Compliant----------------------------------
-
Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3IPAK (TO-251)-55°C~175°C TJTube2004Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)1110W Tc-110W16 nsN-Channel16mOhm @ 32A, 10V4V @ 100μA2190pF @ 25V42A Tc75nC @ 10V65ns75V10V±20V29 ns44 ns53A20V2.19nF16mOhm16 mΩRoHS CompliantHEXFET®Through Hole31 ns4V75V75V47 ns4 V6.22mm6.7056mm2.3876mmNo SVHCNo--------------------
-
-Surface MountTO-252-4, DPak (3 Leads Tab)---55°C~175°C TJTube2003Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-140W Tc---N-Channel5.5m Ω @ 42A, 10V4V @ 250μA2950pF @ 25V42A Tc89nC @ 10V-40V10V±20V--------HEXFET®--------------------------------
-
-Through HoleTO-251-3 Short Leads, IPak, TO-251AA---55°C~150°C TJTube2001Obsolete1 (Unlimited)--MOSFET (Metal Oxide)1120W Tc---N-Channel9m Ω @ 15A, 10V3V @ 250μA2672pF @ 16V90A Tc41nC @ 4.5V-30V4.5V 10V±20V-------Non-RoHS CompliantHEXFET®------------NOSILICONe33EAR99MATTE TIN OVER NICKELFET General Purpose PowerSINGLE26030R-PSIP-T3Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN86A0.0065Ohm340A30V100 mJ
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