IRFU320

Vishay Siliconix IRFU320

Part Number:
IRFU320
Manufacturer:
Vishay Siliconix
Ventron No:
2853273-IRFU320
Description:
MOSFET N-CH 400V 3.1A I-PAK
ECAD Model:
Datasheet:
IRFU320

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Specifications
Vishay Siliconix IRFU320 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU320.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Supplier Device Package
    TO-251AA
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 42W Tc
  • Element Configuration
    Single
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.8Ohm @ 1.9A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3.1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Rise Time
    14ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    3.1A
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    350pF
  • Drain to Source Resistance
    1.8Ohm
  • Rds On Max
    1.8 Ω
  • RoHS Status
    Non-RoHS Compliant
Description
IRFU320 Overview
The maximum input capacitance of this device is 350pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.8Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 400V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFU320 Features
a continuous drain current (ID) of 3.1A
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.8Ohm
a 400V drain to source voltage (Vdss)


IRFU320 Applications
There are a lot of Vishay Siliconix
IRFU320 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFU320 More Descriptions
Trans MOSFET N-CH 400V 3.1A 3-Pin(3 Tab) IPAK
MOSFET N-CH 400V 3.1A I-PAK
Product Comparison
The three parts on the right have similar specifications to IRFU320.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    RoHS Status
    Series
    Termination
    Reverse Recovery Time
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFU320
    IRFU320
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    TO-251AA
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    2.5W Ta 42W Tc
    Single
    2.5W
    10 ns
    N-Channel
    1.8Ohm @ 1.9A, 10V
    4V @ 250μA
    350pF @ 25V
    3.1A Tc
    20nC @ 10V
    14ns
    400V
    10V
    ±20V
    13 ns
    30 ns
    3.1A
    20V
    350pF
    1.8Ohm
    1.8 Ω
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU2307ZPBF
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    IPAK (TO-251)
    -55°C~175°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    110W Tc
    -
    110W
    16 ns
    N-Channel
    16mOhm @ 32A, 10V
    4V @ 100μA
    2190pF @ 25V
    42A Tc
    75nC @ 10V
    65ns
    75V
    10V
    ±20V
    29 ns
    44 ns
    53A
    20V
    2.19nF
    16mOhm
    16 mΩ
    RoHS Compliant
    HEXFET®
    Through Hole
    31 ns
    4V
    75V
    75V
    47 ns
    4 V
    6.22mm
    6.7056mm
    2.3876mm
    No SVHC
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU4104-701PBF
    -
    Surface Mount
    TO-252-4, DPak (3 Leads Tab)
    -
    -
    -55°C~175°C TJ
    Tube
    2003
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    140W Tc
    -
    -
    -
    N-Channel
    5.5m Ω @ 42A, 10V
    4V @ 250μA
    2950pF @ 25V
    42A Tc
    89nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU3709
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    120W Tc
    -
    -
    -
    N-Channel
    9m Ω @ 15A, 10V
    3V @ 250μA
    2672pF @ 16V
    90A Tc
    41nC @ 4.5V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NO
    SILICON
    e3
    3
    EAR99
    MATTE TIN OVER NICKEL
    FET General Purpose Power
    SINGLE
    260
    30
    R-PSIP-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    86A
    0.0065Ohm
    340A
    30V
    100 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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