Vishay Siliconix IRFU210PBF

IRFU210PBF Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 95 mJ.The maximum input capacitance of this device is 140pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.6A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 14 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IRFU210PBF Features
the avalanche energy rating (Eas) is 95 mJ
a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
a threshold voltage of 4V


IRFU210PBF Applications
There are a lot of Vishay Siliconix
IRFU210PBF applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,