Vishay Siliconix IRFU210

Name: IRFU210
Brand: Vishay Siliconix
SKU: 2491621-IRFU210
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFU210

Manufacturer:: Vishay Siliconix

Ventron No:: 2491621-IRFU210

Description:: MOSFET N-CH 200V 2.6A I-PAK

ECAD Model:

Datasheet:: IRFU210

Specifications

Vishay Siliconix IRFU210 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU210.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Supplier Device Package
TO-251AA
Weight
329.988449mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2016
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Current Rating
2.6A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Ta 25W Tc
Element Configuration
Single
Power Dissipation
2.5W
Turn On Delay Time
8.2 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
140pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.6A Tc
Gate Charge (Qg) (Max) @ Vgs
8.2nC @ 10V
Rise Time
17ns
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
8.9 ns
Turn-Off Delay Time
14 ns
Continuous Drain Current (ID)
2.6A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Input Capacitance
140pF
Drain to Source Resistance
1.5Ohm
Rds On Max
1.5 Ω
Height
6.22mm
Length
6.73mm
Width
2.38mm
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

IRFU210 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 140pF @ 25V.This device has a continuous drain current (ID) of [2.6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=200V, the drain-source breakdown voltage is 200V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 14 ns.MOSFETs have 1.5Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFU210 Features
a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)

IRFU210 Applications
There are a lot of Vishay Siliconix
IRFU210 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRFU210 More Descriptions

Trans MOSFET N-CH 200V 2.6A 3-Pin(3 Tab) IPAK
Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:2.6A; On Resistance, Rds(on):1.5ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: No

Product Comparison

The three parts on the right have similar specifications to IRFU210.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

RoHS Status

Lead Free

Series

Threshold Voltage

Recovery Time

REACH SVHC

Radiation Hardening

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRFU210

Vishay Siliconix

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

TO-251AA

329.988449mg

-55°C~150°C TJ

Tube

2016

Obsolete

1 (Unlimited)

150°C

-55°C

200V

MOSFET (Metal Oxide)

2.6A

1

1

2.5W Ta 25W Tc

Single

2.5W

8.2 ns

N-Channel

1.5Ohm @ 1.6A, 10V

4V @ 250μA

140pF @ 25V

2.6A Tc

8.2nC @ 10V

17ns

200V

10V

±20V

8.9 ns

14 ns

2.6A

20V

200V

140pF

1.5Ohm

1.5 Ω

6.22mm

6.73mm

2.38mm

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFU3504ZPBF

Infineon Technologies

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

-

-

-55°C~175°C TJ

Tube

2005

Obsolete

1 (Unlimited)

-

-

40V

MOSFET (Metal Oxide)

42A

-

-

90W Tc

Single

90W

15 ns

N-Channel

9m Ω @ 42A, 10V

4V @ 250μA

1510pF @ 25V

42A Tc

45nC @ 10V

74ns

-

10V

±20V

38 ns

30 ns

77A

20V

40V

-

-

-

6.1mm

6.6mm

2.3mm

RoHS Compliant

Lead Free

HEXFET®

4V

27 ns

No SVHC

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFU210 vs IRFU3504ZPBF
IRFU3709

Infineon Technologies

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-

-55°C~150°C TJ

Tube

2001

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

1

-

120W Tc

-

-

-

N-Channel

9m Ω @ 15A, 10V

3V @ 250μA

2672pF @ 16V

90A Tc

41nC @ 4.5V

-

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

HEXFET®

-

-

-

-

NO

SILICON

e3

3

EAR99

MATTE TIN OVER NICKEL

FET General Purpose Power

SINGLE

260

30

R-PSIP-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

86A

0.0065Ohm

340A

30V

100 mJ

IRFU210 vs IRFU3709
IRFU010

Vishay Siliconix

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-

-55°C~150°C TJ

Tube

2000

Obsolete

1 (Unlimited)

-

-

50V

MOSFET (Metal Oxide)

8.2A

-

-

25W Tc

-

-

-

N-Channel

200m Ω @ 4.2A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

-

-

10V

±20V

-

-

8.2A

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFU210 vs IRFU010

Certification

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IRFU3504ZPBF

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IRFU210 Specification

Part Number	Manufacturers	Description	Stock	Price
IRFU210PBF DISTI #IRFU210PBF	Vishay Intertechnologies	Trans MOSFET N-CH 200V 2.6A 3-Pin(3 Tab) IPAK RoHS: Compliant	2660	1 $0.6681 10 $0.5619 100 $0.5225 500 $0.4928
IRFU210PBF DISTI #IRFU210PBF	Vishay Siliconix	MOSFET N-CH 200V 2.6A I-PAK RoHS: Compliant	1056	1 $1.52 10 $1.349 100 $1.0661 500 $0.8268 1000 $0.65274
IRFU210 DISTI #IRFU210	Vishay Siliconix	MOSFET N-CH 200V 2.6A I-PAK RoHS: Not Compliant	0
IRFU210PBF DISTI #IRFU210PBF	Vishay Intertechnologies	Trans MOSFET N-CH 200V 2.6A 3-Pin(3 Tab) IPAK RoHS: Compliant	2660	12 $0.5603 100 $0.5225
IRFU210PBF DISTI #IRFU210PBF	Vishay Intertechnologies	Trans MOSFET N-CH 200V 2.6A 3-Pin(3 Tab) IPAK - Ta RoHS: Not Compliant	0	3000 $0.5819 6000 $0.5639 12000 $0.5419 18000 $0.5269 30000 $0.5119
IRFU210PBF DISTI #IRFU210PBF	Vishay Intertechnologies	Trans MOSFET N-CH 200V 2.6A 3-Pin(3 Tab) IPAK - Bu RoHS: Not Compliant	0	1 $0.733 10 $0.657 25 $0.618 50 $0.581 100 $0.545 500 $0.512 1000 $0.485
IRFU210PBF DISTI #IRFU210PBF	Vishay Intertechnologies	N CHANNEL MOSFET, 200V, 2.6A, IPAK, Transistor Po	116	1 $0.733 10 $0.657 25 $0.618 50 $0.581 100 $0.545 500 $0.512 1000 $0.485
IRFU210PBF DISTI #IRFU210PBF	Vishay Dale	IRFU210PBF RoHS: Compliant	0	1 $1.42 25 $1.18 100 $1.09 250 $0.99 500 $0.93
IRFU210 DISTI #IRFU210	Vishay Intertechnologies	MOSFET N-Chan 200V 2.6 Amp RoHS: Not Compliant	0
IRFU210PBF DISTI #IRFU210PBF	Vishay Intertechnologies	MOSFET N-Chan 200V 2.6 Amp RoHS: Compliant	5055	1 $0.7 10 $0.53 100 $0.394 500 $0.323 1000 $0.25 3000 $0.228 6000 $0.213 9000 $0.199 24000 $0.188
IRFU210BTLTU_FP001 DISTI #IRFU210BTLTU_FP001	ON Semiconductor	MOSFET 200V N-Ch B-FET RoHS: Compliant	0
IRFU210PBF DISTI #IRFU210PBF	Vishay Intertechnologies	Single N-Channel 200 V 1.5 Ohm Through Hole Power RoHS: Compliant	1964	30 $0.365 300 $0.335 1750 $0.285
IRFU210BTU DISTI #IRFU210BTU	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, N-Channel, Metal-ox RoHS: Not Compliant	222	1 $0.13 25 $0.12 100 $0.12 500 $0.11 1000 $0.11
IRFU210PBF DISTI #IRFU210PBF	Vishay Intertechnologies	MOSFET N-CHANNEL 200V 2.6A IPAK, RL	1570	30 $0.32 50 $0.31 100 $0.28 250 $0.27
IRFU210PBF DISTI #IRFU210PBF	Vishay Intertechnologies	MOSFET N-CHANNEL 200V 2.6A IPAK, EA	99	1 $2 30 $0.32 50 $0.31 100 $0.28 250 $0.27
IRFU210 DISTI #IRFU210	International Rectifier	RoHS: Not Compliant	1414
IRFU210PBF DISTI #IRFU210PBF	Vishay Intertechnologies	RoHS: Compliant	199
IRFU210 DISTI #IRFU210	International Rectifier		2303
IRFU210PBF DISTI #IRFU210PBF	Vishay Intertechnologies	MOSFET N-Chan 200V 2.6 Amp RoHS: Compliant	0
IRFU210PBF. DISTI #IRFU210PBF.	Vishay Intertechnologies	RoHS: Compliant	0	1 $1.11 10 $0.839 100 $0.731
IRFU210PBF DISTI #IRFU210PBF	Vishay Intertechnologies	Trans MOSFET N-CH 200V 2.6A 3-Pin(3 Tab) IPAK RoHS: Compliant	2660	10 $0.739 100 $0.5225 500 $0.505

Vishay Siliconix IRFU210

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