IRFU110

Vishay Siliconix IRFU110

Part Number:
IRFU110
Manufacturer:
Vishay Siliconix
Ventron No:
3586853-IRFU110
Description:
MOSFET N-CH 100V 4.3A I-PAK
ECAD Model:
Datasheet:
IRFU110

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Specifications
Vishay Siliconix IRFU110 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU110.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Supplier Device Package
    TO-251AA
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2017
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    4.7A
  • Power Dissipation-Max
    25W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    6.9 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    540mOhm @ 900mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    180pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4.3A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8.3nC @ 10V
  • Rise Time
    16ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9.4 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    4.3A
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    180pF
  • Drain to Source Resistance
    540mOhm
  • Rds On Max
    540 mΩ
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFU110 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 180pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 540mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFU110 Features
a continuous drain current (ID) of 4.3A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)


IRFU110 Applications
There are a lot of Vishay Siliconix
IRFU110 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFU110 More Descriptions
Trans MOSFET N-CH 100V 4.3A 3-Pin(3 Tab) IPAK
Trans MOSFET N-CH 100V 4.7A 3-Pin TO-251AA
TRANS IRFU110 N-CH FET TO251AA
MOSFET, N I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:4.3A; Resistance, Rds On:0.54ohm; Case Style:TO-251 (I-Pak); Current, Idm Pulse:17A; Power Dissipation:25W; Power, Pd:25W; SMD Marking:IRFU110; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:9.4ns; Time, Rise:16ns; Voltage, Vds:100V; Voltage, Vds Max:100V
Product Comparison
The three parts on the right have similar specifications to IRFU110.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    RoHS Status
    Lead Free
    Series
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFU110
    IRFU110
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    TO-251AA
    -55°C~150°C TJ
    Tube
    2017
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    4.7A
    25W Tc
    Single
    6.9 ns
    N-Channel
    540mOhm @ 900mA, 10V
    4V @ 250μA
    180pF @ 25V
    4.3A Tc
    8.3nC @ 10V
    16ns
    100V
    10V
    ±20V
    9.4 ns
    15 ns
    4.3A
    20V
    180pF
    540mOhm
    540 mΩ
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU4104-701PBF
    -
    Surface Mount
    TO-252-4, DPak (3 Leads Tab)
    -
    -
    -55°C~175°C TJ
    Tube
    2003
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    140W Tc
    -
    -
    N-Channel
    5.5m Ω @ 42A, 10V
    4V @ 250μA
    2950pF @ 25V
    42A Tc
    89nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU1205
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -55°C~175°C TJ
    Tube
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    107W Tc
    -
    -
    N-Channel
    27m Ω @ 26A, 10V
    4V @ 250μA
    1300pF @ 25V
    44A Tc
    65nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    NO
    SILICON
    e0
    3
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, ULTRA LOW RESISTANCE
    SINGLE
    245
    30
    R-PSIP-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    20A
    0.027Ohm
    160A
    55V
    210 mJ
  • IRFU010
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    50V
    MOSFET (Metal Oxide)
    8.2A
    25W Tc
    -
    -
    N-Channel
    200m Ω @ 4.2A, 10V
    4V @ 250μA
    250pF @ 25V
    8.2A Tc
    10nC @ 10V
    -
    -
    10V
    ±20V
    -
    -
    8.2A
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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