Vishay Siliconix IRFU110
- Part Number:
- IRFU110
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3586853-IRFU110
- Description:
- MOSFET N-CH 100V 4.3A I-PAK
- Datasheet:
- IRFU110
Vishay Siliconix IRFU110 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU110.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Supplier Device PackageTO-251AA
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2017
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating4.7A
- Power Dissipation-Max25W Tc
- Element ConfigurationSingle
- Turn On Delay Time6.9 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs540mOhm @ 900mA, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds180pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.3A Tc
- Gate Charge (Qg) (Max) @ Vgs8.3nC @ 10V
- Rise Time16ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)9.4 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)4.3A
- Gate to Source Voltage (Vgs)20V
- Input Capacitance180pF
- Drain to Source Resistance540mOhm
- Rds On Max540 mΩ
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFU110 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 180pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 540mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFU110 Features
a continuous drain current (ID) of 4.3A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRFU110 Applications
There are a lot of Vishay Siliconix
IRFU110 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 180pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 540mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFU110 Features
a continuous drain current (ID) of 4.3A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRFU110 Applications
There are a lot of Vishay Siliconix
IRFU110 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFU110 More Descriptions
Trans MOSFET N-CH 100V 4.3A 3-Pin(3 Tab) IPAK
Trans MOSFET N-CH 100V 4.7A 3-Pin TO-251AA
TRANS IRFU110 N-CH FET TO251AA
MOSFET, N I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:4.3A; Resistance, Rds On:0.54ohm; Case Style:TO-251 (I-Pak); Current, Idm Pulse:17A; Power Dissipation:25W; Power, Pd:25W; SMD Marking:IRFU110; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:9.4ns; Time, Rise:16ns; Voltage, Vds:100V; Voltage, Vds Max:100V
Trans MOSFET N-CH 100V 4.7A 3-Pin TO-251AA
TRANS IRFU110 N-CH FET TO251AA
MOSFET, N I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:4.3A; Resistance, Rds On:0.54ohm; Case Style:TO-251 (I-Pak); Current, Idm Pulse:17A; Power Dissipation:25W; Power, Pd:25W; SMD Marking:IRFU110; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:9.4ns; Time, Rise:16ns; Voltage, Vds:100V; Voltage, Vds Max:100V
The three parts on the right have similar specifications to IRFU110.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxRoHS StatusLead FreeSeriesSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFU110Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3TO-251AA-55°C~150°C TJTube2017Obsolete1 (Unlimited)150°C-55°C100VMOSFET (Metal Oxide)4.7A25W TcSingle6.9 nsN-Channel540mOhm @ 900mA, 10V4V @ 250μA180pF @ 25V4.3A Tc8.3nC @ 10V16ns100V10V±20V9.4 ns15 ns4.3A20V180pF540mOhm540 mΩNon-RoHS CompliantContains Lead------------------------
-
-Surface MountTO-252-4, DPak (3 Leads Tab)---55°C~175°C TJTube2003Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-140W Tc--N-Channel5.5m Ω @ 42A, 10V4V @ 250μA2950pF @ 25V42A Tc89nC @ 10V-40V10V±20V---------HEXFET®----------------------
-
-Through HoleTO-251-3 Short Leads, IPak, TO-251AA---55°C~175°C TJTube1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-107W Tc--N-Channel27m Ω @ 26A, 10V4V @ 250μA1300pF @ 25V44A Tc65nC @ 10V-55V10V±20V-------Non-RoHS Compliant-HEXFET®NOSILICONe03EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, ULTRA LOW RESISTANCESINGLE24530R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING20A0.027Ohm160A55V210 mJ
-
Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA---55°C~150°C TJTube2000Obsolete1 (Unlimited)--50VMOSFET (Metal Oxide)8.2A25W Tc--N-Channel200m Ω @ 4.2A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V--10V±20V--8.2A----Non-RoHS CompliantContains Lead-----------------------
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