Infineon Technologies IRFU024NPBF

Name: IRFU024NPBF
Brand: Infineon Technologies
SKU: 2479641-IRFU024NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFU024NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479641-IRFU024NPBF

Description:: MOSFET N-CH 55V 17A I-PAK

ECAD Model:

Datasheet:: IRFU024NPBF

Specifications

Infineon Technologies IRFU024NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFU024NPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
75mOhm
Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
260
Current Rating
17A
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
38W
Case Connection
DRAIN
Turn On Delay Time
4.9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
75m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
370pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
34ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
27 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
17A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Pulsed Drain Current-Max (IDM)
68A
Dual Supply Voltage
55V
Nominal Vgs
4 V
Height
6.22mm
Length
6.7056mm
Width
2.3876mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRFU024NPBF Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide the lowest on-resistance per silicon area feasible. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient device that can be used in a variety of applications. Surface mounting via vapor phase, infrared, or wave soldering processes is possible with the D-PAK. The straight lead version (IRFU series) is designed for one-hole attachment. In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.

IRFU024NPBF Features
?On-Resistan8 is really low.
?Surface Installation (IRFR024N)
?Standard Lead (IRFU024N)
?Process Technology Advancement
?Quick Switching
?Avalanche-Resistant
?Lead-Free

IRFU024NPBF Applications
Switching applications

IRFU024NPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;I-Pak (TO-251AA);PD 45W
In a Tube of 75, IRFU024NPBF N-Channel MOSFET, 17 A, 55 V HEXFET, 3-Pin IPAK Infineon
Single N-Channel 55 V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-251
Trans MOSFET N-CH Si 55V 17A 3-Pin(3 Tab) IPAK Tube / MOSFET N-CH 55V 17A I-PAK
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 14A/60V IPAK IRFU 024 NPBF
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):75mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
MOSFET, N, 55V, 16A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:45W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:17A; Current Temperature:25°C; Fall Time tf:27ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; Package / Case:IPAK; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:68A; Rise Time:34ns; SMD Marking:IRFU024N; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:4.9ns; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRFU024NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Recovery Time

Radiation Hardening

View Compare
IRFU024NPBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

e3

Active

1 (Unlimited)

3

Through Hole

EAR99

75mOhm

AVALANCHE RATED, ULTRA LOW RESISTANCE

55V

MOSFET (Metal Oxide)

260

17A

30

1

45W Tc

Single

ENHANCEMENT MODE

38W

DRAIN

4.9 ns

N-Channel

SWITCHING

75m Ω @ 10A, 10V

4V @ 250μA

370pF @ 25V

17A Tc

20nC @ 10V

34ns

10V

±20V

27 ns

19 ns

17A

4V

20V

55V

68A

55V

4 V

6.22mm

6.7056mm

2.3876mm

No SVHC

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-
IRFU4104-701PBF

Infineon Technologies

-

-

-

Surface Mount

TO-252-4, DPak (3 Leads Tab)

-

-

-55°C~175°C TJ

Tube

HEXFET®

2003

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

140W Tc

-

-

-

-

-

N-Channel

-

5.5m Ω @ 42A, 10V

4V @ 250μA

2950pF @ 25V

42A Tc

89nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

40V

-

-

IRFU024NPBF vs IRFU4104-701PBF
IRFU3504ZPBF

Infineon Technologies

-

-

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

-

-55°C~175°C TJ

Tube

HEXFET®

2005

-

Obsolete

1 (Unlimited)

-

-

-

-

-

40V

MOSFET (Metal Oxide)

-

42A

-

-

90W Tc

Single

-

90W

-

15 ns

N-Channel

-

9m Ω @ 42A, 10V

4V @ 250μA

1510pF @ 25V

42A Tc

45nC @ 10V

74ns

10V

±20V

38 ns

30 ns

77A

4V

20V

40V

-

-

-

6.1mm

6.6mm

2.3mm

No SVHC

RoHS Compliant

Lead Free

-

27 ns

No

IRFU024NPBF vs IRFU3504ZPBF
IRFU010

Vishay Siliconix

-

-

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~150°C TJ

Tube

-

2000

-

Obsolete

1 (Unlimited)

-

-

-

-

-

50V

MOSFET (Metal Oxide)

-

8.2A

-

-

25W Tc

-

-

-

-

-

N-Channel

-

200m Ω @ 4.2A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

-

10V

±20V

-

-

8.2A

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

IRFU024NPBF vs IRFU010

Certification

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IRFU024NPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFU024NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3 Tab) IPAK Tube	18858	52 $0.2928 250 $0.2736 500 $0.264 1000 $0.2592 2000 $0.2448
IRFU024NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3 Tab) IPAK Tube	1575	38 $0.6613
IRFU024NPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 17A I-PAK RoHS: Compliant	2600	1 $1.03 10 $0.918 100 $0.7357 500 $0.58142 1000 $0.4692
IRFU024NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3 Tab) IPAK Tube RoHS: Compliant	1954	10 $0.334
IRFU024NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3 Tab) IPAK Tube RoHS: Compliant	1575	10 $0.529 50 $0.352 100 $0.334
IRFU024NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3 Tab) IPAK Tube RoHS: Compliant	18858	5 $1.35 25 $0.54 50 $0.491 100 $0.437 500 $0.36 1000 $0.33
IRFU024NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3 Tab) IPAK - Rail RoHS: Compliant	1106	1 $0.3629 10 $0.3579 25 $0.3529 50 $0.3479 100 $0.3349 500 $0.3239 1000 $0.3179
IRFU024NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3 Tab) IPAK (Alt: RoHS: Compliant	9175	1 $0.4269 10 $0.4079 25 $0.4069 50 $0.4059 100 $0.3509 500 $0.2959 1000 $0.2539
IRFU024NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3 Tab) IPAK (Alt: RoHS: Compliant	0
IRFU024NPBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 17A, IPAK, Transistor Pola	673	1 $0.84 10 $0.714 100 $0.549 500 $0.485 1000 $0.383 2500 $0.362 10000 $0.34
IRFU024NPBF. DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 17A, IPAK, Transistor Pola	0	1 $0.84 10 $0.714 100 $0.549 500 $0.485 1000 $0.383 2500 $0.362 10000 $0.34
IRFU024NPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.075Oh RoHS: Compliant	6000	1 $0.66 10 $0.58 100 $0.51 500 $0.44 1000 $0.39
IRFU024NPBF DISTI #	Infineon Technologies AG	Single N-Channel 55 V 0.075 Ohm 20 nC HEXFET Power RoHS: Compliant	4500	50 $0.35 250 $0.285 500 $0.275 1000 $0.27 2000 $0.26
IRFU024NPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 55V 16A 75mOhm 13.3nC RoHS: Compliant	5349	1 $0.84 10 $0.714 100 $0.549 500 $0.485 1000 $0.383 3000 $0.34
IRFU024NPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 55V 17A IPAK, EA	16449	1 $2 30 $0.3 100 $0.29
IRFU024NPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 55V, 16A, 38W,	531	1 $0.6079 3 $0.3776 10 $0.308 75 $0.2648
IRFU024NPBF DISTI #	Infineon Technologies AG	N-CH 55V 17A 75mOhm TO-251AA RoHS: Compliant	320	75 $0.322 225 $0.3037 450 $0.2853 1125 $0.2576 2625 $0.2485
IRFU024NPBF DISTI #	INF	RoHS: Compliant	75	2250 $0.4091
IRFU024NPBF DISTI #	INFINEON/IR	I-PAK (TO-251) RoHS: Compliant	2646	2400 $0.3 2646 $0.28
IRFU024NPBF DISTI #	Infineon Technologies AG	N-Ch 55V 17A 45W 0,075R TO251AA RoHS: Compliant	180	15 $0.484 75 $0.244 300 $0.184 600 $0.177
IRFU024NPBF DISTI #	International Rectifier	INSTOCK	15975
IRFU024NPBF DISTI #	Infineon Technologies AG	MOSFET, N, 55V, 16A, I-PAK RoHS: Compliant	2290	5 $0.861 25 $0.75 100 $0.612 250 $0.517 500 $0.447 1000 $0.423 5000 $0.401
IRFU024NPBF DISTI #	Infineon Technologies AG	MOSFET, N, 55V, 16A, I-PAK RoHS: Compliant	688	5 $0.618 25 $0.306 100 $0.296 250 $0.285 500 $0.273

IRFU024~~(7)~~
IRFU02~~(11)~~
IRFU0~~(17)~~
IRFU~~(66)~~
IRF~~(69)~~

Infineon Technologies IRFU024NPBF

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