Infineon Technologies IRFS7734PBF
- Part Number:
- IRFS7734PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483712-IRFS7734PBF
- Description:
- MOSFET N-CH 75V 183A D2PAK
- Datasheet:
- IRFS7734PBF
Infineon Technologies IRFS7734PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS7734PBF.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight3.949996g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®, StrongIRFET™
- Published2013
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max290W Tc
- Element ConfigurationSingle
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.5m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id3.7V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds10150pF @ 25V
- Current - Continuous Drain (Id) @ 25°C183A Tc
- Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
- Rise Time123ns
- Drain to Source Voltage (Vdss)75V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)100 ns
- Turn-Off Delay Time124 ns
- Continuous Drain Current (ID)183A
- Gate to Source Voltage (Vgs)20V
- Height4.83mm
- Length10.67mm
- Width9.65mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFS7734PBF Overview
A device's maximum input capacitance is 10150pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 183A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 124 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 75V drain to source voltage (Vdss).This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
IRFS7734PBF Features
a continuous drain current (ID) of 183A
the turn-off delay time is 124 ns
a 75V drain to source voltage (Vdss)
IRFS7734PBF Applications
There are a lot of Infineon Technologies
IRFS7734PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 10150pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 183A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 124 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 75V drain to source voltage (Vdss).This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
IRFS7734PBF Features
a continuous drain current (ID) of 183A
the turn-off delay time is 124 ns
a 75V drain to source voltage (Vdss)
IRFS7734PBF Applications
There are a lot of Infineon Technologies
IRFS7734PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFS7734PBF More Descriptions
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET® Power Mosfet - D2PAK
TUBE / MOSFET, 75V, 183A, 3.5 Ohm, 180 nC, D2PAK
MOSFET Operating temperature: -55...175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 290 W
Power Field-Effect Transistor, 183A I(D), 75V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET® Power Mosfet - D2PAK
TUBE / MOSFET, 75V, 183A, 3.5 Ohm, 180 nC, D2PAK
MOSFET Operating temperature: -55...175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 290 W
Power Field-Effect Transistor, 183A I(D), 75V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
The three parts on the right have similar specifications to IRFS7734PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)HeightLengthWidthRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationOperating ModePower DissipationCase ConnectionTransistor ApplicationThreshold VoltageDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)REACH SVHCLifecycle StatusJESD-609 CodePbfree CodeTerminal FinishDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)Radiation HardeningView Compare
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IRFS7734PBF17 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB33.949996g-55°C~175°C TJTubeHEXFET®, StrongIRFET™2013Discontinued1 (Unlimited)EAR99MOSFET (Metal Oxide)1290W TcSingle20 nsN-Channel3.5m Ω @ 100A, 10V3.7V @ 250μA10150pF @ 25V183A Tc270nC @ 10V123ns75V6V 10V±20V100 ns124 ns183A20V4.83mm10.67mm9.65mmROHS3 CompliantLead Free--------------------------------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB31.437803g-55°C~150°C TJTape & Reel (TR)-2016Obsolete1 (Unlimited)-MOSFET (Metal Oxide)1170W TcSingle14 nsN-Channel520mOhm @ 6.6A, 10V4V @ 250μA1423pF @ 25V11A Tc52nC @ 10V35ns500V10V±30V28 ns32 ns11A30V4.83mm10.67mm9.65mmNon-RoHS Compliant-D2PAK150°C-55°C1.423nF520mOhm520 mΩ-------------------------
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12 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTape & Reel (TR)HEXFET®2012Active1 (Unlimited)EAR99MOSFET (Metal Oxide)-140W Tc-13 nsN-Channel13.9m Ω @ 37A, 10V4V @ 100μA3180pF @ 50V61A Tc87nC @ 10V32ns-10V±20V-28 ns61A20V---ROHS3 CompliantLead Free------SILICON2FET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE140WDRAINSWITCHING2V100V250ANo SVHC-------
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4 WeeksThrough HoleThrough HoleTO-3P-3 Full Pack-6.962g-55°C~150°C TJTube--Not For New Designs1 (Unlimited)EAR99MOSFET (Metal Oxide)-96W TcSingle45 nsN-Channel390m Ω @ 4.8A, 10V4V @ 250μA3800pF @ 25V9.6A Tc113nC @ 10V130ns-10V±30V125 ns260 ns9.6A30V---ROHS3 Compliant-------SILICON3-----R-PSFM-T31-ENHANCEMENT MODE96WISOLATEDSWITCHING-500V38.4A-ACTIVE, NOT REC (Last Updated: 3 days ago)e3yesTin (Sn)0.39Ohm990 mJNo
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