IRFS7734PBF

Infineon Technologies IRFS7734PBF

Part Number:
IRFS7734PBF
Manufacturer:
Infineon Technologies
Ventron No:
2483712-IRFS7734PBF
Description:
MOSFET N-CH 75V 183A D2PAK
ECAD Model:
Datasheet:
IRFS7734PBF

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Specifications
Infineon Technologies IRFS7734PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS7734PBF.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Weight
    3.949996g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®, StrongIRFET™
  • Published
    2013
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    290W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3.5m Ω @ 100A, 10V
  • Vgs(th) (Max) @ Id
    3.7V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    10150pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    183A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    270nC @ 10V
  • Rise Time
    123ns
  • Drain to Source Voltage (Vdss)
    75V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    100 ns
  • Turn-Off Delay Time
    124 ns
  • Continuous Drain Current (ID)
    183A
  • Gate to Source Voltage (Vgs)
    20V
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFS7734PBF Overview
A device's maximum input capacitance is 10150pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 183A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 124 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 75V drain to source voltage (Vdss).This device uses no drive voltage (6V 10V) to reduce its overall power consumption.

IRFS7734PBF Features
a continuous drain current (ID) of 183A
the turn-off delay time is 124 ns
a 75V drain to source voltage (Vdss)


IRFS7734PBF Applications
There are a lot of Infineon Technologies
IRFS7734PBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFS7734PBF More Descriptions
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET® Power Mosfet - D2PAK
TUBE / MOSFET, 75V, 183A, 3.5 Ohm, 180 nC, D2PAK
MOSFET Operating temperature: -55...175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 290 W
Power Field-Effect Transistor, 183A I(D), 75V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
Product Comparison
The three parts on the right have similar specifications to IRFS7734PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Technology
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Transistor Element Material
    Number of Terminations
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Transistor Application
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    REACH SVHC
    Lifecycle Status
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Radiation Hardening
    View Compare
  • IRFS7734PBF
    IRFS7734PBF
    17 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    3.949996g
    -55°C~175°C TJ
    Tube
    HEXFET®, StrongIRFET™
    2013
    Discontinued
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    1
    290W Tc
    Single
    20 ns
    N-Channel
    3.5m Ω @ 100A, 10V
    3.7V @ 250μA
    10150pF @ 25V
    183A Tc
    270nC @ 10V
    123ns
    75V
    6V 10V
    ±20V
    100 ns
    124 ns
    183A
    20V
    4.83mm
    10.67mm
    9.65mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS11N50ATRL
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.437803g
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    1
    170W Tc
    Single
    14 ns
    N-Channel
    520mOhm @ 6.6A, 10V
    4V @ 250μA
    1423pF @ 25V
    11A Tc
    52nC @ 10V
    35ns
    500V
    10V
    ±30V
    28 ns
    32 ns
    11A
    30V
    4.83mm
    10.67mm
    9.65mm
    Non-RoHS Compliant
    -
    D2PAK
    150°C
    -55°C
    1.423nF
    520mOhm
    520 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS4510TRLPBF
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2012
    Active
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    -
    140W Tc
    -
    13 ns
    N-Channel
    13.9m Ω @ 37A, 10V
    4V @ 100μA
    3180pF @ 50V
    61A Tc
    87nC @ 10V
    32ns
    -
    10V
    ±20V
    -
    28 ns
    61A
    20V
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    SILICON
    2
    FET General Purpose Power
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    140W
    DRAIN
    SWITCHING
    2V
    100V
    250A
    No SVHC
    -
    -
    -
    -
    -
    -
    -
  • IRFS450B
    4 Weeks
    Through Hole
    Through Hole
    TO-3P-3 Full Pack
    -
    6.962g
    -55°C~150°C TJ
    Tube
    -
    -
    Not For New Designs
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    -
    96W Tc
    Single
    45 ns
    N-Channel
    390m Ω @ 4.8A, 10V
    4V @ 250μA
    3800pF @ 25V
    9.6A Tc
    113nC @ 10V
    130ns
    -
    10V
    ±30V
    125 ns
    260 ns
    9.6A
    30V
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    SILICON
    3
    -
    -
    -
    -
    -
    R-PSFM-T3
    1
    -
    ENHANCEMENT MODE
    96W
    ISOLATED
    SWITCHING
    -
    500V
    38.4A
    -
    ACTIVE, NOT REC (Last Updated: 3 days ago)
    e3
    yes
    Tin (Sn)
    0.39Ohm
    990 mJ
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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