IRFS4610

Infineon Technologies IRFS4610

Part Number:
IRFS4610
Manufacturer:
Infineon Technologies
Ventron No:
2492645-IRFS4610
Description:
MOSFET N-CH 100V 73A D2PAK
ECAD Model:
Datasheet:
IRFS4610

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Specifications
Infineon Technologies IRFS4610 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS4610.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    190W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    14m Ω @ 44A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3550pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    73A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    140nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    73A
  • Drain-source On Resistance-Max
    0.014Ohm
  • Pulsed Drain Current-Max (IDM)
    290A
  • DS Breakdown Voltage-Min
    100V
  • Avalanche Energy Rating (Eas)
    370 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRFS4610 Description
The IRFS4610 is a D2-Pak 100V Single N-Channel Power MOSFET. The IRFS4610 has a maximum power dissipation of 190W Tc and an operating temperature of -55°C175°C TJ. StrongIRFETTM power MOSFETs are designed with low RDS(on) and high current capacity in mind. The devices are excellent for low-frequency applications that demand high performance and durability. DC motors, battery management systems, inverters, and DC-DC converters are among the applications covered by the comprehensive portfolio.


IRFS4610 Features

Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free
IRFS4610 Applications
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits

Product Comparison
The three parts on the right have similar specifications to IRFS4610.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Factory Lead Time
    Contact Plating
    Mount
    Number of Pins
    JESD-609 Code
    ECCN Code
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Radiation Hardening
    Lead Free
    Lifecycle Status
    Weight
    Pbfree Code
    Terminal Finish
    Termination
    Threshold Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    View Compare
  • IRFS4610
    IRFS4610
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    2
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    190W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    14m Ω @ 44A, 10V
    4V @ 100μA
    3550pF @ 50V
    73A Tc
    140nC @ 10V
    100V
    10V
    ±20V
    73A
    0.014Ohm
    290A
    100V
    370 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS33N15DTRLP
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    Not For New Designs
    1 (Unlimited)
    2
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    30
    R-PSSO-G2
    1
    -
    3.8W Ta 170W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    56m Ω @ 20A, 10V
    5.5V @ 250μA
    2020pF @ 25V
    33A Tc
    90nC @ 10V
    -
    10V
    ±30V
    -
    0.056Ohm
    -
    -
    -
    ROHS3 Compliant
    14 Weeks
    Tin
    Surface Mount
    3
    e3
    EAR99
    150V
    33A
    Single
    3.8W
    13 ns
    38ns
    21 ns
    23 ns
    33A
    30V
    150V
    No
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS450B
    Through Hole
    TO-3P-3 Full Pack
    -
    SILICON
    -55°C~150°C TJ
    Tube
    -
    -
    Not For New Designs
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    R-PSFM-T3
    1
    -
    96W Tc
    ENHANCEMENT MODE
    ISOLATED
    N-Channel
    SWITCHING
    390m Ω @ 4.8A, 10V
    4V @ 250μA
    3800pF @ 25V
    9.6A Tc
    113nC @ 10V
    -
    10V
    ±30V
    -
    0.39Ohm
    38.4A
    -
    990 mJ
    ROHS3 Compliant
    4 Weeks
    -
    Through Hole
    -
    e3
    EAR99
    -
    -
    Single
    96W
    45 ns
    130ns
    125 ns
    260 ns
    9.6A
    30V
    500V
    No
    -
    ACTIVE, NOT REC (Last Updated: 3 days ago)
    6.962g
    yes
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS4620PBF
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2007
    Discontinued
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    N-Channel
    -
    77.5m Ω @ 15A, 10V
    5V @ 100μA
    1710pF @ 50V
    24A Tc
    38nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    14 Weeks
    -
    Surface Mount
    3
    -
    EAR99
    -
    -
    Single
    144W
    13.4 ns
    22.4ns
    14.8 ns
    25.4 ns
    24A
    20V
    200V
    -
    Lead Free
    -
    -
    -
    -
    SMD/SMT
    5V
    200V
    5 V
    4.826mm
    10.668mm
    9.65mm
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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