IRFS4321TRL7PP

Infineon Technologies IRFS4321TRL7PP

Part Number:
IRFS4321TRL7PP
Manufacturer:
Infineon Technologies
Ventron No:
2481989-IRFS4321TRL7PP
Description:
MOSFET N-CH 150V 86A D2PAK
ECAD Model:
Datasheet:
IRFS4321TRL7PP

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Specifications
Infineon Technologies IRFS4321TRL7PP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS4321TRL7PP.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-7, D2Pak (6 Leads Tab)
  • Number of Pins
    7
  • Weight
    1.59999g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • JESD-30 Code
    R-PSSO-G6
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    350W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    14.7m Ω @ 34A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4460pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    86A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Rise Time
    60ns
  • Drain to Source Voltage (Vdss)
    150V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    86A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    30V
  • Pulsed Drain Current-Max (IDM)
    343A
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFS4321TRL7PP Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4460pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 86A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 25 ns.Peak drain current is 343A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 5V, which means that it will not activate any of its functions when its threshold voltage reaches 5V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFS4321TRL7PP Features
a continuous drain current (ID) of 86A
the turn-off delay time is 25 ns
based on its rated peak drain current 343A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)


IRFS4321TRL7PP Applications
There are a lot of Infineon Technologies
IRFS4321TRL7PP applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFS4321TRL7PP More Descriptions
Single N-Channel 150 V 14.7 mOhm 71 nC HEXFET® Power Mosfet - D2PAK-7
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHSInfineon SCT
Trans MOSFET N-CH 150V 86A 7-Pin D2PAK T/R - Tape and Reel
Benefits: Low Rdson Reduces Losses; Low Gate Charge Improves the Switching Performance; Improved Diode Recovery Improves Switching and EMI Performance; 30V Gate Voltage Rating Improves Robustness; Fully Characterized Avalanche SOA | Target Applications: Battery Operated Drive
Product Comparison
The three parts on the right have similar specifications to IRFS4321TRL7PP.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Form
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Pulsed Drain Current-Max (IDM)
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Power Dissipation
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Configuration
    Termination
    Resistance
    Voltage - Rated DC
    Current Rating
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    View Compare
  • IRFS4321TRL7PP
    IRFS4321TRL7PP
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-7, D2Pak (6 Leads Tab)
    7
    1.59999g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2013
    Active
    1 (Unlimited)
    6
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G6
    1
    1
    350W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    14.7m Ω @ 34A, 10V
    5V @ 250μA
    4460pF @ 50V
    86A Tc
    110nC @ 10V
    60ns
    150V
    10V
    ±30V
    35 ns
    25 ns
    86A
    5V
    30V
    343A
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS5615PBF
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -
    -55°C~175°C TJ
    Tube
    -
    2008
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    -
    144W Tc
    -
    -
    -
    8.9 ns
    N-Channel
    -
    42mOhm @ 21A, 10V
    5V @ 100μA
    1750pF @ 50V
    33A Tc
    40nC @ 10V
    23.1ns
    150V
    10V
    ±20V
    13.1 ns
    17.2 ns
    33A
    -
    20V
    -
    -
    No
    RoHS Compliant
    -
    D2PAK
    175°C
    -55°C
    144W
    150V
    1.75nF
    42mOhm
    42 mΩ
    4.826mm
    10.668mm
    9.652mm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS4510TRLPBF
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2012
    Active
    1 (Unlimited)
    2
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    -
    140W Tc
    -
    ENHANCEMENT MODE
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    13.9m Ω @ 37A, 10V
    4V @ 100μA
    3180pF @ 50V
    61A Tc
    87nC @ 10V
    32ns
    -
    10V
    ±20V
    -
    28 ns
    61A
    2V
    20V
    250A
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    140W
    100V
    -
    -
    -
    -
    -
    -
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    SINGLE WITH BUILT-IN DIODE
    -
    -
    -
    -
    -
    -
    -
  • IRFS3307ZPBF
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2006
    Discontinued
    1 (Unlimited)
    -
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    230W Tc
    Single
    -
    -
    15 ns
    N-Channel
    -
    5.8m Ω @ 75A, 10V
    4V @ 150μA
    4750pF @ 50V
    120A Tc
    110nC @ 10V
    64ns
    -
    10V
    ±20V
    65 ns
    38 ns
    120A
    4V
    20V
    -
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    230W
    75V
    -
    -
    -
    2.39mm
    6.73mm
    6.22mm
    -
    -
    -
    -
    SMD/SMT
    5.8MOhm
    75V
    120A
    75V
    50 ns
    4 V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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