Infineon Technologies IRFS4321TRL7PP
- Part Number:
- IRFS4321TRL7PP
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2481989-IRFS4321TRL7PP
- Description:
- MOSFET N-CH 150V 86A D2PAK
- Datasheet:
- IRFS4321TRL7PP
Infineon Technologies IRFS4321TRL7PP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS4321TRL7PP.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-7, D2Pak (6 Leads Tab)
- Number of Pins7
- Weight1.59999g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- JESD-30 CodeR-PSSO-G6
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max350W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs14.7m Ω @ 34A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4460pF @ 50V
- Current - Continuous Drain (Id) @ 25°C86A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Rise Time60ns
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)35 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)86A
- Threshold Voltage5V
- Gate to Source Voltage (Vgs)30V
- Pulsed Drain Current-Max (IDM)343A
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFS4321TRL7PP Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4460pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 86A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 25 ns.Peak drain current is 343A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 5V, which means that it will not activate any of its functions when its threshold voltage reaches 5V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFS4321TRL7PP Features
a continuous drain current (ID) of 86A
the turn-off delay time is 25 ns
based on its rated peak drain current 343A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)
IRFS4321TRL7PP Applications
There are a lot of Infineon Technologies
IRFS4321TRL7PP applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4460pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 86A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 25 ns.Peak drain current is 343A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 5V, which means that it will not activate any of its functions when its threshold voltage reaches 5V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFS4321TRL7PP Features
a continuous drain current (ID) of 86A
the turn-off delay time is 25 ns
based on its rated peak drain current 343A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)
IRFS4321TRL7PP Applications
There are a lot of Infineon Technologies
IRFS4321TRL7PP applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFS4321TRL7PP More Descriptions
Single N-Channel 150 V 14.7 mOhm 71 nC HEXFET® Power Mosfet - D2PAK-7
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHSInfineon SCT
Trans MOSFET N-CH 150V 86A 7-Pin D2PAK T/R - Tape and Reel
Benefits: Low Rdson Reduces Losses; Low Gate Charge Improves the Switching Performance; Improved Diode Recovery Improves Switching and EMI Performance; 30V Gate Voltage Rating Improves Robustness; Fully Characterized Avalanche SOA | Target Applications: Battery Operated Drive
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHSInfineon SCT
Trans MOSFET N-CH 150V 86A 7-Pin D2PAK T/R - Tape and Reel
Benefits: Low Rdson Reduces Losses; Low Gate Charge Improves the Switching Performance; Improved Diode Recovery Improves Switching and EMI Performance; 30V Gate Voltage Rating Improves Robustness; Fully Characterized Avalanche SOA | Target Applications: Battery Operated Drive
The three parts on the right have similar specifications to IRFS4321TRL7PP.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal FormJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Pulsed Drain Current-Max (IDM)REACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePower DissipationDrain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)ConfigurationTerminationResistanceVoltage - Rated DCCurrent RatingDual Supply VoltageRecovery TimeNominal VgsView Compare
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IRFS4321TRL7PP12 WeeksSurface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)71.59999gSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2013Active1 (Unlimited)6EAR99FET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G611350W TcSingleENHANCEMENT MODEDRAIN18 nsN-ChannelSWITCHING14.7m Ω @ 34A, 10V5V @ 250μA4460pF @ 50V86A Tc110nC @ 10V60ns150V10V±30V35 ns25 ns86A5V30V343ANo SVHCNoROHS3 CompliantLead Free-----------------------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3---55°C~175°C TJTube-2008Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--1-144W Tc---8.9 nsN-Channel-42mOhm @ 21A, 10V5V @ 100μA1750pF @ 50V33A Tc40nC @ 10V23.1ns150V10V±20V13.1 ns17.2 ns33A-20V--NoRoHS Compliant-D2PAK175°C-55°C144W150V1.75nF42mOhm42 mΩ4.826mm10.668mm9.652mm-----------
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12 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2012Active1 (Unlimited)2EAR99FET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G21-140W Tc-ENHANCEMENT MODEDRAIN13 nsN-ChannelSWITCHING13.9m Ω @ 37A, 10V4V @ 100μA3180pF @ 50V61A Tc87nC @ 10V32ns-10V±20V-28 ns61A2V20V250ANo SVHC-ROHS3 CompliantLead Free---140W100V------SINGLENOT SPECIFIEDNOT SPECIFIEDSINGLE WITH BUILT-IN DIODE-------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3---55°C~175°C TJTubeHEXFET®2006Discontinued1 (Unlimited)-EAR99-MOSFET (Metal Oxide)----230W TcSingle--15 nsN-Channel-5.8m Ω @ 75A, 10V4V @ 150μA4750pF @ 50V120A Tc110nC @ 10V64ns-10V±20V65 ns38 ns120A4V20V-No SVHCNoROHS3 CompliantLead Free---230W75V---2.39mm6.73mm6.22mm----SMD/SMT5.8MOhm75V120A75V50 ns4 V
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