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IRFS4115TRLPBF

Infineon Technologies IRFS4115TRLPBF

Part Number:
IRFS4115TRLPBF
Manufacturer:
Infineon Technologies
Ventron No:
2849019-IRFS4115TRLPBF
Description:
MOSFET N-CH 150V 195A D2PAK
ECAD Model:
Datasheet:
IRFS4115TRLPBF

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Specifications
Infineon Technologies IRFS4115TRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS4115TRLPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    11.8MOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    375W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    375W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    12.1m Ω @ 62A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5270pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    195A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    120nC @ 10V
  • Rise Time
    73ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    39 ns
  • Turn-Off Delay Time
    41 ns
  • Continuous Drain Current (ID)
    195A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    99A
  • Drain to Source Breakdown Voltage
    150V
  • Height
    4.826mm
  • Length
    10.668mm
  • Width
    9.652mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
LM293D Description


LM293D belongs to the family of dual differential comparators. This electronic device is composed of two independent voltage comparators, both of which are able to operate from a single power supply over a wide range of voltages. The output load resistance can be connected to any power supply voltage within the allowable power supply voltage range, and is not limited by the voltage value of the Vcc terminal. This output can be used as a simple SPS open circuit to ground (when no load resistor is used), and the sink current in the output section is limited by the available drive and β values of the device.


LM293D Features


Fast response time
Low power consumption
Low supply-current drain independent of supply
Operating temperature range of -25 °C to 85 °C
Compliant to MIL-PRF-38535


LM293D Applications


Chemical or gas sensor
Desktop PC
Motor control: AC induction
Weigh scale
IRFS4115TRLPBF More Descriptions
Single N-Channel 150V 12.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 150V 195A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
MOSFET, N-CH, 150V, 195A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Source Voltage Vds:150V; On Resistance
Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 150V, 195A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 99 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 10.3 / Gate-Source Voltage V = 20 / Fall Time ns = 39 / Rise Time ns = 73 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 73 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 375
Product Comparison
The three parts on the right have similar specifications to IRFS4115TRLPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Number of Channels
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Contact Plating
    Voltage - Rated DC
    Current Rating
    Drain-source On Resistance-Max
    Termination
    Threshold Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    REACH SVHC
    View Compare
  • IRFS4115TRLPBF
    IRFS4115TRLPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2011
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    11.8MOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    375W Tc
    Single
    ENHANCEMENT MODE
    375W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    12.1m Ω @ 62A, 10V
    5V @ 250μA
    5270pF @ 50V
    195A Tc
    120nC @ 10V
    73ns
    10V
    ±20V
    39 ns
    41 ns
    195A
    20V
    99A
    150V
    4.826mm
    10.668mm
    9.652mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS11N50ATRL
    IRFS11N50ATRL
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2016
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    170W Tc
    Single
    -
    -
    -
    14 ns
    N-Channel
    -
    520mOhm @ 6.6A, 10V
    4V @ 250μA
    1423pF @ 25V
    11A Tc
    52nC @ 10V
    35ns
    10V
    ±30V
    28 ns
    32 ns
    11A
    30V
    -
    -
    4.83mm
    10.67mm
    9.65mm
    -
    Non-RoHS Compliant
    -
    D2PAK
    1.437803g
    150°C
    -55°C
    1
    500V
    1.423nF
    520mOhm
    520 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRFS4115TRLPBF vs IRFS11N50ATRL
  • IRFS33N15DTRLP
    IRFS33N15DTRLP
    Infineon Technologies
    14 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    e3
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    3.8W Ta 170W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    56m Ω @ 20A, 10V
    5.5V @ 250μA
    2020pF @ 25V
    33A Tc
    90nC @ 10V
    38ns
    10V
    ±30V
    21 ns
    23 ns
    33A
    30V
    -
    150V
    -
    -
    -
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Tin
    150V
    33A
    0.056Ohm
    -
    -
    -
    -
    -
    -
    IRFS4115TRLPBF vs IRFS33N15DTRLP
  • IRFS3307ZPBF
    IRFS3307ZPBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2006
    -
    Discontinued
    1 (Unlimited)
    -
    EAR99
    5.8MOhm
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    230W Tc
    Single
    -
    230W
    -
    15 ns
    N-Channel
    -
    5.8m Ω @ 75A, 10V
    4V @ 150μA
    4750pF @ 50V
    120A Tc
    110nC @ 10V
    64ns
    10V
    ±20V
    65 ns
    38 ns
    120A
    20V
    -
    75V
    2.39mm
    6.73mm
    6.22mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    75V
    120A
    -
    SMD/SMT
    4V
    75V
    50 ns
    4 V
    No SVHC
    IRFS4115TRLPBF vs IRFS3307ZPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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