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IRFS4010PBF

Infineon Technologies IRFS4010PBF

Part Number:
IRFS4010PBF
Manufacturer:
Infineon Technologies
Ventron No:
2493218-IRFS4010PBF
Description:
MOSFET N-CH 100V 180A D2PAK
ECAD Model:
Datasheet:
IRFS4010PBF

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Specifications
Infineon Technologies IRFS4010PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS4010PBF.
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    4.7MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    375W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    375W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    21 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.7m Ω @ 106A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    9575pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    180A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    215nC @ 10V
  • Rise Time
    86ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    77 ns
  • Turn-Off Delay Time
    100 ns
  • Reverse Recovery Time
    72 ns
  • Continuous Drain Current (ID)
    180A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    720A
  • Dual Supply Voltage
    100V
  • Nominal Vgs
    4 V
  • Height
    4.826mm
  • Length
    10.668mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFS4010PBF Description
The Infineon Technologies series is a refined version of ST's popular strip-based PowerMESHTM topology. In addition to minimizing on-resistance, extra care is taken to ensure that the most demanding applications have good dv/dt capabilities. Lowering conduction loss, improving switching performance, increasing dv/dt rate, and increasing avalanche energy are all goals of this technology.

IRFS4010PBF Features
Ruggedness of the Gate, Avalanche, and Dynamic dV/dt
Avalanche SOA and fully characterized capacitance
Enhanced dV/dt and dI/dt capability of body diodes
Lead-Free

IRFS4010PBF Applications
Synchronous Rectification with High Efficiency in SMPS
Uninterruptible Power Supply (UPS) is a type of power supply that is
Power Switching at High Speed
Circuits with hard switches and high frequencies

IRFS4010PBF More Descriptions
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 180A 3-Pin(2 Tab) D2PAK Tube
MOSFET, 100V, 180A, 4.7MOHM, 143NC QG, D2PAK
MOSFET, N-CH, 100V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9575pF; Current Id Max:180A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:720A; Reverse Recovery Time trr Typ:72ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Product Comparison
The three parts on the right have similar specifications to IRFS4010PBF.
  • Image
    Part Number
    Manufacturer
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Reverse Recovery Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Terminal Position
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    Voltage - Rated DC
    Current Rating
    View Compare
  • IRFS4010PBF
    IRFS4010PBF
    Infineon Technologies
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    4.7MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    375W Tc
    Single
    ENHANCEMENT MODE
    375W
    DRAIN
    21 ns
    N-Channel
    SWITCHING
    4.7m Ω @ 106A, 10V
    4V @ 250μA
    9575pF @ 50V
    180A Tc
    215nC @ 10V
    86ns
    10V
    ±20V
    77 ns
    100 ns
    72 ns
    180A
    4V
    20V
    100V
    720A
    100V
    4 V
    4.826mm
    10.668mm
    9.65mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS4310TRRPBF
    IRFS4310TRRPBF
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    -
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    300W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    7m Ω @ 75A, 10V
    4V @ 250μA
    7670pF @ 50V
    130A Tc
    250nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    550A
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    100V
    75A
    0.007Ohm
    100V
    980 mJ
    -
    -
    -
    IRFS4010PBF vs IRFS4310TRRPBF
  • IRFS33N15DTRLP
    IRFS33N15DTRLP
    Infineon Technologies
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    e3
    Not For New Designs
    1 (Unlimited)
    2
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    3.8W Ta 170W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    56m Ω @ 20A, 10V
    5.5V @ 250μA
    2020pF @ 25V
    33A Tc
    90nC @ 10V
    38ns
    10V
    ±30V
    21 ns
    23 ns
    -
    33A
    -
    30V
    150V
    -
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    0.056Ohm
    -
    -
    14 Weeks
    150V
    33A
    IRFS4010PBF vs IRFS33N15DTRLP
  • IRFS4620PBF
    IRFS4620PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2007
    -
    Discontinued
    1 (Unlimited)
    -
    SMD/SMT
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    144W Tc
    Single
    -
    144W
    -
    13.4 ns
    N-Channel
    -
    77.5m Ω @ 15A, 10V
    5V @ 100μA
    1710pF @ 50V
    24A Tc
    38nC @ 10V
    22.4ns
    10V
    ±20V
    14.8 ns
    25.4 ns
    -
    24A
    5V
    20V
    200V
    -
    200V
    5 V
    4.826mm
    10.668mm
    9.65mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    14 Weeks
    -
    -
    IRFS4010PBF vs IRFS4620PBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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