Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFS38N20DTRLP
IRFS38N20DTRLP

Infineon Technologies IRFS38N20DTRLP

Part Number:
IRFS38N20DTRLP
Manufacturer:
Infineon Technologies
Ventron No:
2482868-IRFS38N20DTRLP
Description:
MOSFET N-CH 200V 43A D2PAK
ECAD Model:
Datasheet:
IRFS38N20DTRLP

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRFS38N20DTRLP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS38N20DTRLP.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2002
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    54mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    200V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    38A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    3.8W Ta 300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    320W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    16 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    54m Ω @ 26A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2900pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    43A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    91nC @ 10V
  • Rise Time
    95ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    47 ns
  • Turn-Off Delay Time
    29 ns
  • Continuous Drain Current (ID)
    44A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    200V
  • Dual Supply Voltage
    200V
  • Avalanche Energy Rating (Eas)
    460 mJ
  • Recovery Time
    240 ns
  • Nominal Vgs
    5 V
  • Height
    4.826mm
  • Length
    10.668mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFS38N20DTRLP                  Description   MOSFET is an electrically driven switch, which allows and prevents a flow of current, without any mechanical moving parts. The MOSFET stands for METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR(Fig 1). In MOSFET, the MOS part is related to the structure of the transistor, while the FET part is related to how it works.

IRFS38N20DTRLP                 Applications
· High frequency DC-DC converters · Plasma Display Panel   IRFS38N20DTRLP                      Features
Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective Coss to SimplifyDesign(SeeApp.NoteAN1001) Fully Characterized Avalanche Voltage and Current Lead-Free  
IRFS38N20DTRLP More Descriptions
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;D2Pak;PD 300W;VGS /-30V
Single N-Channel 200 V 0.054 Ohm 91 nC HEXFET® Power Mosfet - D2PAK
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 200V 38A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 200V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:200V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:320W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-262AB; Current Id Max:44A; Package / Case:D2-PAK; Power Dissipation Pd:320W; Power Dissipation Pd:3.8W; Pulse Current Idm:180A; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Product Comparison
The three parts on the right have similar specifications to IRFS38N20DTRLP.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Terminal Position
    Configuration
    Pulsed Drain Current-Max (IDM)
    View Compare
  • IRFS38N20DTRLP
    IRFS38N20DTRLP
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2002
    e3
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    54mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    200V
    MOSFET (Metal Oxide)
    GULL WING
    260
    38A
    30
    R-PSSO-G2
    1
    3.8W Ta 300W Tc
    Single
    ENHANCEMENT MODE
    320W
    DRAIN
    16 ns
    N-Channel
    SWITCHING
    54m Ω @ 26A, 10V
    5V @ 250μA
    2900pF @ 25V
    43A Tc
    91nC @ 10V
    95ns
    10V
    ±20V
    47 ns
    29 ns
    44A
    5V
    30V
    200V
    200V
    460 mJ
    240 ns
    5 V
    4.826mm
    10.668mm
    9.65mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS5615PBF
    IRFS5615PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    -
    2008
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    144W Tc
    -
    -
    144W
    -
    8.9 ns
    N-Channel
    -
    42mOhm @ 21A, 10V
    5V @ 100μA
    1750pF @ 50V
    33A Tc
    40nC @ 10V
    23.1ns
    10V
    ±20V
    13.1 ns
    17.2 ns
    33A
    -
    20V
    150V
    -
    -
    -
    -
    4.826mm
    10.668mm
    9.652mm
    -
    No
    RoHS Compliant
    -
    D2PAK
    175°C
    -55°C
    150V
    1.75nF
    42mOhm
    42 mΩ
    -
    -
    -
    IRFS38N20DTRLP vs IRFS5615PBF
  • IRFS4510TRLPBF
    IRFS4510TRLPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2012
    -
    Active
    1 (Unlimited)
    2
    -
    EAR99
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    R-PSSO-G2
    1
    140W Tc
    -
    ENHANCEMENT MODE
    140W
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    13.9m Ω @ 37A, 10V
    4V @ 100μA
    3180pF @ 50V
    61A Tc
    87nC @ 10V
    32ns
    10V
    ±20V
    -
    28 ns
    61A
    2V
    20V
    100V
    -
    -
    -
    -
    -
    -
    -
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    250A
    IRFS38N20DTRLP vs IRFS4510TRLPBF
  • IRFS3307ZPBF
    IRFS3307ZPBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2006
    -
    Discontinued
    1 (Unlimited)
    -
    SMD/SMT
    EAR99
    5.8MOhm
    -
    -
    75V
    MOSFET (Metal Oxide)
    -
    -
    120A
    -
    -
    -
    230W Tc
    Single
    -
    230W
    -
    15 ns
    N-Channel
    -
    5.8m Ω @ 75A, 10V
    4V @ 150μA
    4750pF @ 50V
    120A Tc
    110nC @ 10V
    64ns
    10V
    ±20V
    65 ns
    38 ns
    120A
    4V
    20V
    75V
    75V
    -
    50 ns
    4 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRFS38N20DTRLP vs IRFS3307ZPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for IRFS38N20DTRLP
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.