Infineon Technologies IRFS38N20DPBF
- Part Number:
- IRFS38N20DPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3813654-IRFS38N20DPBF
- Description:
- MOSFET N-CH 200V 43A D2PAK
- ECAD Model:
-
- Datasheet:
- IRFS38N20DPBF
Infineon Technologies IRFS38N20DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS38N20DPBF.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2002
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.8W Ta 300W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs54m Ω @ 26A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C43A Tc
- Gate Charge (Qg) (Max) @ Vgs91nC @ 10V
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)43A
- Drain-source On Resistance-Max0.054Ohm
- Pulsed Drain Current-Max (IDM)180A
- DS Breakdown Voltage-Min200V
- Avalanche Energy Rating (Eas)460 mJ
- RoHS StatusROHS3 Compliant
IRFS38N20DPBF Description
IRFS38N20DPBF HEXFET? Power MOSFET is manufactured by Infineon Technologies, available in TO-263-3, D2Pak (2 Leads Tab), TO-263AB packages and can be used in differrent applications.
IRFS38N20DPBF Features
Fully Characterized Avalanche Voltage and Current
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design,
IRFS38N20DPBF Applications
Plasma Display Panel
High frequency DC-DC converters
IRFS38N20DPBF HEXFET? Power MOSFET is manufactured by Infineon Technologies, available in TO-263-3, D2Pak (2 Leads Tab), TO-263AB packages and can be used in differrent applications.
IRFS38N20DPBF Features
Fully Characterized Avalanche Voltage and Current
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design,
IRFS38N20DPBF Applications
Plasma Display Panel
High frequency DC-DC converters
IRFS38N20DPBF More Descriptions
Transistor MOSFET Negative Channel 200 Volt 38A 3-Pin(2 Tab) D2PAK
MOSFET Transistor, N Channel, 44 A, 200 V, 54 mohm, 10 V, 5 V
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;D2Pak;PD 300W;VGS /-30V
Single N-Channel 200 V 0.054 Ohm 60 nC HEXFET® Power Mosfet - D2PAK
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
N CHANNEL MOSFET, 200V, 44A, D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:44A;
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
MOSFET, N, 200V, 44A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:44A; Resistance, Rds On:0.054ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:180A; Power Dissipation:320W; Power, Pd:320W; Resistance, Rds on @ Vgs = 10V:0.054ohm; Thermal Resistance, Junction to Case A:0.47°C/W; Voltage, Vds:200V; Voltage, Vds Max:200V; Voltage, Vgs th Max:5V
MOSFET Transistor, N Channel, 44 A, 200 V, 54 mohm, 10 V, 5 V
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;D2Pak;PD 300W;VGS /-30V
Single N-Channel 200 V 0.054 Ohm 60 nC HEXFET® Power Mosfet - D2PAK
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
N CHANNEL MOSFET, 200V, 44A, D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:44A;
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
MOSFET, N, 200V, 44A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:44A; Resistance, Rds On:0.054ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:180A; Power Dissipation:320W; Power, Pd:320W; Resistance, Rds on @ Vgs = 10V:0.054ohm; Thermal Resistance, Junction to Case A:0.47°C/W; Voltage, Vds:200V; Voltage, Vds Max:200V; Voltage, Vgs th Max:5V
The three parts on the right have similar specifications to IRFS38N20DPBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsSupplier Device PackageMax Operating TemperatureMin Operating TemperatureElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningWeightNumber of ChannelsFactory Lead TimeContact PlatingVoltage - Rated DCCurrent RatingLead FreeView Compare
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IRFS38N20DPBFSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTubeHEXFET®2002e3Discontinued1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.8W Ta 300W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING54m Ω @ 26A, 10V5V @ 250μA2900pF @ 25V43A Tc91nC @ 10V200V10V±20V43A0.054Ohm180A200V460 mJROHS3 Compliant----------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2010-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)------1-190W Tc--N-Channel-14mOhm @ 44A, 10V4V @ 100μA3550pF @ 50V73A Tc140nC @ 10V100V10V±20V-----RoHS CompliantSurface Mount3D2PAK175°C-55°CSingle190W18 ns87ns70 ns53 ns73A20V100V3.55nF14mOhm14 mΩ4.826mm10.668mm9.65mmNo-------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTape & Reel (TR)-2016-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--------170W Tc--N-Channel-520mOhm @ 6.6A, 10V4V @ 250μA1423pF @ 25V11A Tc52nC @ 10V500V10V±30V-----Non-RoHS CompliantSurface Mount3D2PAK150°C-55°CSingle-14 ns35ns28 ns32 ns11A30V-1.423nF520mOhm520 mΩ4.83mm10.67mm9.65mm-1.437803g1-----
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2000e3Not For New Designs1 (Unlimited)2EAR99--MOSFET (Metal Oxide)-GULL WING26030R-PSSO-G2-1-3.8W Ta 170W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING56m Ω @ 20A, 10V5.5V @ 250μA2020pF @ 25V33A Tc90nC @ 10V-10V±30V-0.056Ohm---ROHS3 CompliantSurface Mount3---Single3.8W13 ns38ns21 ns23 ns33A30V150V------No--14 WeeksTin150V33AContains Lead
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