Infineon Technologies IRFS3107-7PPBF
- Part Number:
- IRFS3107-7PPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479109-IRFS3107-7PPBF
- Description:
- MOSFET N-CH 75V 240A D2PAK-7
- Datasheet:
- IRFS3107-7PPBF
Infineon Technologies IRFS3107-7PPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS3107-7PPBF.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-7, D2Pak (6 Leads Tab), TO-263CB
- Number of Pins7
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2005
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance2.6MOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G6
- Number of Elements1
- Power Dissipation-Max370W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation370W
- Case ConnectionDRAIN
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.6m Ω @ 160A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds9200pF @ 50V
- Current - Continuous Drain (Id) @ 25°C240A Tc
- Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
- Rise Time80ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)64 ns
- Turn-Off Delay Time100 ns
- Reverse Recovery Time52 ns
- Continuous Drain Current (ID)260A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)240A
- Drain to Source Breakdown Voltage75V
- Dual Supply Voltage75V
- Avalanche Energy Rating (Eas)320 mJ
- Nominal Vgs4 V
- Height4.572mm
- Length10.668mm
- Width9.65mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFS3107-7PPBF Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 320 mJ.The maximum input capacitance of this device is 9200pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 260A.When VGS=75V, and ID flows to VDS at 75VVDS, the drain-source breakdown voltage is 75V in this device.As shown in the table below, the drain current of this device is 240A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFS3107-7PPBF Features
the avalanche energy rating (Eas) is 320 mJ
a continuous drain current (ID) of 260A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 100 ns
a threshold voltage of 4V
IRFS3107-7PPBF Applications
There are a lot of Infineon Technologies
IRFS3107-7PPBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 320 mJ.The maximum input capacitance of this device is 9200pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 260A.When VGS=75V, and ID flows to VDS at 75VVDS, the drain-source breakdown voltage is 75V in this device.As shown in the table below, the drain current of this device is 240A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFS3107-7PPBF Features
the avalanche energy rating (Eas) is 320 mJ
a continuous drain current (ID) of 260A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 100 ns
a threshold voltage of 4V
IRFS3107-7PPBF Applications
There are a lot of Infineon Technologies
IRFS3107-7PPBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFS3107-7PPBF More Descriptions
Single N-Channel 75 V 2.6 mOhm 240 nC HEXFET® Power Mosfet - D2PAK-7
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package, D2PAK7P, RoHSInfineon SCT
Trans MOSFET N-CH 75V 260A 7-Pin(6 Tab) D2PAK Tube
MOSFET, 75V, 260A, 2.6 MOHM, 160 NC QG,D2PAK-7
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK-7 Polarity: N Power dissipation: 370 W
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:75V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:370W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9200pF; Current Id Max:260A; Package / Case:D2-PAK; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Pulse Current Idm:1060A; Reverse Recovery Time trr Typ:52ns; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package, D2PAK7P, RoHSInfineon SCT
Trans MOSFET N-CH 75V 260A 7-Pin(6 Tab) D2PAK Tube
MOSFET, 75V, 260A, 2.6 MOHM, 160 NC QG,D2PAK-7
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK-7 Polarity: N Power dissipation: 370 W
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:75V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:370W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9200pF; Current Id Max:260A; Package / Case:D2-PAK; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Pulse Current Idm:1060A; Reverse Recovery Time trr Typ:52ns; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
The three parts on the right have similar specifications to IRFS3107-7PPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeReverse Recovery TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxContact PlatingVoltage - Rated DCCurrent RatingDrain-source On Resistance-MaxRecovery TimeView Compare
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IRFS3107-7PPBF14 WeeksSurface MountSurface MountTO-263-7, D2Pak (6 Leads Tab), TO-263CB7SILICON-55°C~175°C TJTubeHEXFET®2005e3Discontinued1 (Unlimited)6SMD/SMTEAR992.6MOhmMatte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)GULL WING26030R-PSSO-G61370W TcSingleENHANCEMENT MODE370WDRAIN17 nsN-ChannelSWITCHING2.6m Ω @ 160A, 10V4V @ 250μA9200pF @ 50V240A Tc240nC @ 10V80ns10V±20V64 ns100 ns52 ns260A4V20V240A75V75V320 mJ4 V4.572mm10.668mm9.65mmNo SVHCNoROHS3 CompliantLead Free---------------
-
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~150°C TJTape & Reel (TR)-2016-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-----170W TcSingle---14 nsN-Channel-520mOhm @ 6.6A, 10V4V @ 250μA1423pF @ 25V11A Tc52nC @ 10V35ns10V±30V28 ns32 ns-11A-30V-----4.83mm10.67mm9.65mm--Non-RoHS Compliant-D2PAK1.437803g150°C-55°C1500V1.423nF520mOhm520 mΩ-----
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14 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2000e3Not For New Designs1 (Unlimited)2-EAR99---MOSFET (Metal Oxide)GULL WING26030R-PSSO-G213.8W Ta 170W TcSingleENHANCEMENT MODE3.8WDRAIN13 nsN-ChannelSWITCHING56m Ω @ 20A, 10V5.5V @ 250μA2020pF @ 25V33A Tc90nC @ 10V38ns10V±30V21 ns23 ns-33A-30V-150V-------NoROHS3 CompliantContains Lead---------Tin150V33A0.056Ohm-
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTubeHEXFET®2006-Discontinued1 (Unlimited)-SMD/SMTEAR995.8MOhm--MOSFET (Metal Oxide)-----230W TcSingle-230W-15 nsN-Channel-5.8m Ω @ 75A, 10V4V @ 150μA4750pF @ 50V120A Tc110nC @ 10V64ns10V±20V65 ns38 ns-120A4V20V-75V75V-4 V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free----------75V120A-50 ns
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