IRFIZ44NPBF

Infineon Technologies IRFIZ44NPBF

Part Number:
IRFIZ44NPBF
Manufacturer:
Infineon Technologies
Ventron No:
3554163-IRFIZ44NPBF
Description:
MOSFET N-CH 55V 31A TO220FP
ECAD Model:
Datasheet:
IRFIZ44NPBF

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Specifications
Infineon Technologies IRFIZ44NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFIZ44NPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2003
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    30A
  • Number of Elements
    1
  • Power Dissipation-Max
    45W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    38W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    7.3 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 17A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    31A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    65nC @ 10V
  • Rise Time
    69ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    60 ns
  • Turn-Off Delay Time
    47 ns
  • Continuous Drain Current (ID)
    31A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.024Ohm
  • Drain to Source Breakdown Voltage
    55V
  • Dual Supply Voltage
    55V
  • Recovery Time
    98 ns
  • Isolation Voltage
    2.5kV
  • Nominal Vgs
    4 V
  • Height
    9.8mm
  • Length
    10.6172mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFIZ44NPBF Description The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100-micron mica barrier with a standard TO-220 product. The Fullback is mounted to a heat sink using a single clip or by a single screw fixing. 

IRFIZ44NPBF Features Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ? Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free 

IRFIZ44NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.024Ohm;ID 31A;TO-220 Full-Pak;PD 45W;-55de
Single N-Channel 55 V 0.024 Ohm 65 nC HEXFET® Power Mosfet - TO-220-3FP
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 31A 3-Pin(3 Tab) TO-220 Full-Pak - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 38 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 28A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:38W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFIZ44NPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Isolation Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Weight
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Number of Channels
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Surface Mount
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFIZ44NPBF
    IRFIZ44NPBF
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    e3
    Active
    1 (Unlimited)
    3
    Through Hole
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    60V
    MOSFET (Metal Oxide)
    30A
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    38W
    ISOLATED
    7.3 ns
    N-Channel
    SWITCHING
    24m Ω @ 17A, 10V
    4V @ 250μA
    1300pF @ 25V
    31A Tc
    65nC @ 10V
    69ns
    10V
    ±20V
    60 ns
    47 ns
    31A
    4V
    TO-220AB
    20V
    0.024Ohm
    55V
    55V
    98 ns
    2.5kV
    4 V
    9.8mm
    10.6172mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFI9540G
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    -
    -55°C~175°C TJ
    Tube
    -
    2014
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    48W Tc
    Single
    -
    -
    -
    24 ns
    P-Channel
    -
    200mOhm @ 6.6A, 10V
    4V @ 250μA
    1400pF @ 25V
    11A Tc
    61nC @ 10V
    110ns
    10V
    ±20V
    86 ns
    51 ns
    11A
    -
    -
    20V
    -
    -
    -
    -
    -
    -
    9.8mm
    10.63mm
    4.83mm
    -
    No
    Non-RoHS Compliant
    Lead Free
    TO-220-3
    6.000006g
    200MOhm
    175°C
    -55°C
    1
    100V
    1.4nF
    200mOhm
    200 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFI9Z24N
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    SILICON
    -
    Tube
    HEXFET®
    1997
    e0
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    -
    1
    29W Tc
    -
    ENHANCEMENT MODE
    -
    ISOLATED
    -
    P-Channel
    SWITCHING
    175m Ω @ 5.4A, 10V
    4V @ 250μA
    350pF @ 25V
    9.5A Tc
    19nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    TO-220AB
    -
    0.175Ohm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    55V
    -
    -
    -
    NO
    Other Transistors
    SINGLE
    225
    30
    R-PSFM-T3
    Not Qualified
    175°C
    SINGLE WITH BUILT-IN DIODE
    9.5A
    48A
    55V
    96 mJ
  • IRFI630G
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    250V
    MOSFET (Metal Oxide)
    5.9A
    -
    35W Tc
    Single
    -
    32W
    -
    9.4 ns
    N-Channel
    -
    400mOhm @ 3.5A, 10V
    4V @ 250μA
    800pF @ 25V
    5.9A Tc
    43nC @ 10V
    28ns
    10V
    ±20V
    20 ns
    39 ns
    5.9A
    -
    -
    20V
    -
    200V
    -
    -
    -
    -
    9.8mm
    10.63mm
    4.83mm
    -
    No
    Non-RoHS Compliant
    Contains Lead
    TO-220-3
    6.000006g
    -
    150°C
    -55°C
    1
    200V
    800pF
    400mOhm
    400 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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