Infineon Technologies IRFIZ44NPBF
- Part Number:
- IRFIZ44NPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3554163-IRFIZ44NPBF
- Description:
- MOSFET N-CH 55V 31A TO220FP
- Datasheet:
- IRFIZ44NPBF
Infineon Technologies IRFIZ44NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFIZ44NPBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2003
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating30A
- Number of Elements1
- Power Dissipation-Max45W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation38W
- Case ConnectionISOLATED
- Turn On Delay Time7.3 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs24m Ω @ 17A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C31A Tc
- Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
- Rise Time69ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)60 ns
- Turn-Off Delay Time47 ns
- Continuous Drain Current (ID)31A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.024Ohm
- Drain to Source Breakdown Voltage55V
- Dual Supply Voltage55V
- Recovery Time98 ns
- Isolation Voltage2.5kV
- Nominal Vgs4 V
- Height9.8mm
- Length10.6172mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFIZ44NPBF Description
The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100-micron mica barrier with a standard TO-220 product. The Fullback is mounted to a heat sink using a single clip or by a single screw fixing.
IRFIZ44NPBF Features Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ? Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
IRFIZ44NPBF Features Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ? Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
IRFIZ44NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.024Ohm;ID 31A;TO-220 Full-Pak;PD 45W;-55de
Single N-Channel 55 V 0.024 Ohm 65 nC HEXFET® Power Mosfet - TO-220-3FP
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 31A 3-Pin(3 Tab) TO-220 Full-Pak - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 38 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 28A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:38W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Single N-Channel 55 V 0.024 Ohm 65 nC HEXFET® Power Mosfet - TO-220-3FP
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 31A 3-Pin(3 Tab) TO-220 Full-Pak - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 38 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 28A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:38W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFIZ44NPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishAdditional FeatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageDual Supply VoltageRecovery TimeIsolation VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageWeightResistanceMax Operating TemperatureMin Operating TemperatureNumber of ChannelsDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxSurface MountSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFIZ44NPBF12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~175°C TJTubeHEXFET®2003e3Active1 (Unlimited)3Through HoleEAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY60VMOSFET (Metal Oxide)30A145W TcSingleENHANCEMENT MODE38WISOLATED7.3 nsN-ChannelSWITCHING24m Ω @ 17A, 10V4V @ 250μA1300pF @ 25V31A Tc65nC @ 10V69ns10V±20V60 ns47 ns31A4VTO-220AB20V0.024Ohm55V55V98 ns2.5kV4 V9.8mm10.6172mm4.826mmNo SVHCNoROHS3 CompliantLead Free------------------------
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-Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3--55°C~175°C TJTube-2014-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)--48W TcSingle---24 nsP-Channel-200mOhm @ 6.6A, 10V4V @ 250μA1400pF @ 25V11A Tc61nC @ 10V110ns10V±20V86 ns51 ns11A--20V------9.8mm10.63mm4.83mm-NoNon-RoHS CompliantLead FreeTO-220-36.000006g200MOhm175°C-55°C1100V1.4nF200mOhm200 mΩ-------------
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--Through HoleTO-220-3 Full Pack-SILICON-TubeHEXFET®1997e0Obsolete1 (Unlimited)3-EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY-MOSFET (Metal Oxide)-129W Tc-ENHANCEMENT MODE-ISOLATED-P-ChannelSWITCHING175m Ω @ 5.4A, 10V4V @ 250μA350pF @ 25V9.5A Tc19nC @ 10V-10V±20V----TO-220AB-0.175Ohm----------Non-RoHS Compliant-------55V---NOOther TransistorsSINGLE22530R-PSFM-T3Not Qualified175°CSINGLE WITH BUILT-IN DIODE9.5A48A55V96 mJ
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-Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3--55°C~150°C TJTube-2016-Obsolete1 (Unlimited)-----250VMOSFET (Metal Oxide)5.9A-35W TcSingle-32W-9.4 nsN-Channel-400mOhm @ 3.5A, 10V4V @ 250μA800pF @ 25V5.9A Tc43nC @ 10V28ns10V±20V20 ns39 ns5.9A--20V-200V----9.8mm10.63mm4.83mm-NoNon-RoHS CompliantContains LeadTO-220-36.000006g-150°C-55°C1200V800pF400mOhm400 mΩ-------------
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